Abstract:Enhancement-mode (E-mode) buried <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN metal-oxide-semiconductor field-effect-transistors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN-MOSFET’s) with threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) of −1.7 V, maximum ON-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula> ) of 6.1 mA/mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> are demonstrated on a standard <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN/AlGaN/GaN-on-Si power HEMT substrate. An oxygen plasma treatment (OPT) was deployed to the gated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN region where a relatively thick (i.e. 31 nm) GaN is retained without aggressive gate recess. The OPT converts the top portion of the GaN layer to be free of holes so that only the bottom portion remains <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -type while being spatially separated from the etched GaN surface and gate-oxide/GaN interface. As a result, E-mode operation is enabled while a high-quality <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel is retained. Multi-energy fluorine ion implantation was implemented for planar isolation of GaN <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel FETs with mesa edges and sidewalls eliminated. Consequently, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio is obtained.

Analytical Model and New Structure of the Enhancement-Mode Polarization-Junction Hemt with Vertical Conduction Channel

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

A Novel Physics-Based Approach to Analyze and Model E -Mode p-GaN Power HEMTs

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ / ${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

Polarization-Assisted Acceptor Ionization in E-Mode GaN P-Fet on 650-V E-mode P-Gan Gate HEMT (EPH) Platform

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

960V normally-off p-GaN gate HEMT with high threshold voltage and drain current

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering