Amorphous ZnO Based Resistive Random Access Memory

Yong Huang,Zihan Shen,Ye Wu,Xiaoqiu Wang,Shufang Zhang,Xiaoqin Shi,Haibo Zeng

DOI: https://doi.org/10.1039/c5ra22728c

IF: 4.036

2016-01-01

RSC Advances

Abstract:Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

What problem does this paper attempt to address?

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Tan-Yi Li,Da-Wei Wang,Sichao Du,Wenchao Chen,Wen-Yan Yin

DOI: https://doi.org/10.1109/ICCEM47450.2020.9219521

2020-01-01

Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Xing Li,Jian-Guo Yang,Hong-Ping Ma,Yu-Hang Liu,Zhi-Gang Ji,Wei Huang,Xin Ou,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1021/acsami.0c06476

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectrics was investigated. By alternatively atomic-layer-depositing Ga2O3 and ZnO with different thickness, the oxygen vacancy concentration can be accurately controlled. When regulating ZnO to ~31%, the RRAMs exhibit forming-free property as well as the outstanding performance, including the ratio of high resistance state to the low resistance state of 1000, retention time of over 104 s, and the endurance of 100. By preparing RRAMs of different Zn concentration, we carried out comparative study and explored the physical origin for the forming-free property as well as the good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications.
HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Qigang Zhou,Jiwei Zhai

DOI: https://doi.org/10.1016/j.apsusc.2013.07.148

IF: 6.7

2013-01-01

Applied Surface Science

Abstract:The high temperature conducting materials Zirconium nitride (ZrNx) films were deposited on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/HfOx(x=1.7)/ZrNx (bottom) sandwich structure. The reproducible resistive switching (RS) property of the memory cells was studied systematically for RRAM applications. In contrast to the memory cells in Pt/HfOx/Pt structure, the Pt/HfOx/ZrNx structure show a robust endurance, low and stable operation parameters, large memory window and good retention properties. The composition and chemical bonding states of the prepared HfOx and ZrNx thin films were analyzed by X-ray photoelectron spectroscopy (XPS) technique and the cross-sectional image of the Pt/HfOx/ZrNx structure was observed by high-resolution transmission electron microscopy (HR-TEM). The results show that the formed interface Zirconium oxynitride between the dielectric HfOx film and the ZrNx bottom electrode play key roles in the RS performance improvement. (C) 2013 Elsevier B. V. All rights reserved.
Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Shibing Long,Qi Liu,Hangbing Lv,Yingtao Li,Yan Wang,Sen Zhang,Wentai Lian,Kangwei Zhang,Ming Wang,Hongwei Xie,Ming Liu

DOI: https://doi.org/10.1007/s00339-011-6273-8

2011-01-01

Applied Physics A

Abstract:Resistive switching mechanism of zirconium oxide-based resistive random access memory (RRAM) devices composed of Cu-doped ZrO 2 film sandwiched between an oxidizable electrode and an inert electrode was investigated. The Ag/ZrO 2 :Cu/Pt RRAM devices with crosspoint structure fabricated by e-beam evaporation and e-beam lithography show reproducible bipolar resistive switching. The linear I – V relationship of low resistance state (LRS) and the dependence of LRS resistance ( R ON ) and reset current ( I reset ) on the set current compliance ( I comp ) indicate that the observed resistive switching characteristics of the Ag/ZrO 2 :Cu/Pt device should be ascribed to the formation and annihilation of localized conductive filaments (CFs). The physical origin of CF was further analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). CFs were directly observed by cross-sectional TEM. According to EDS and elemental mapping analysis, the main chemical composition of CF is determined by Ag atoms, coming from the Ag top electrode. On the basis of these experiments, we propose that the set and reset process of the device stem from the electrochemical reactions in the zirconium oxide under different external electrical stimuli.
Studies on Structural and Resistive Switching Properties of Al/Zno/Al Structured Resistive Random Access Memory

Hongxia Li,Yiming Chen,Xin Wu,Junhua Xi,Yanwei Huang,Zhenguo Ji

DOI: https://doi.org/10.1142/s0218625x17500482

2017-01-01

Surface Review and Letters

Abstract:Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.
Resistance Switching Characteristics of Ag/ZnO/graphene Resistive Random Access Memory

Ruizhao Tian,Lianyue Li,Kanyu Yang,Zhengchun Yang,Hanjie Wang,Peng Pan,Jie He,Jinshi Zhao,Baozeng Zhou

DOI: https://doi.org/10.1016/j.vacuum.2022.111625

IF: 4

2022-01-01

Vacuum

Abstract:In this work, an Ag/ZnO/Graphene structure resistive random access memory (RRAM) is prepared through RF magnetron sputtering. Compared to the Ag/ZnO/Au structure device, the endurance of the device using a graphene electrode up to 3 x 103 cycles. It has a self-current compliance function of 2 x 10-4 A and 30 times switching resistance ratio and characteristics without electroforming. The density of states (DOS) of ZnO supercells with different space groups are calculated by using the first-principles, and it is analyzed that the contributions of different supercells to the conductivity and contact type of the RRAM. Combined with the I-V curve of the RRAM, it illustrated that the conduction path is created by the space-charge-limited conduction (SCLC) of electrons captured by oxygen vacancy traps. The biocompatibility of the device is tested by a cell toxicity test. It proves that the Ag/ZnO/Graphene RRAM has high biocompatibility and broad applicability in implantable biomedical devices.
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

kuanchang chang,tsungming tsai,tingchang chang,hsinghua wu,yongen syu,gengwei chang,tianjian chu,guanru liu,yuting su,minchen chen,jhihhong pan,jianyu chen,chengwei tung,huichun huang,yahsiang tai,dershin gan,s m sze

DOI: https://doi.org/10.1109/LED.2013.2241725

2013-01-01

Abstract:Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Min-Ci Wu,Jui-Yuan Chen,Yi-Hsin Ting,Chih-Yang Huang,Wen-Wei Wu

DOI: https://doi.org/10.1016/j.nanoen.2020.105717

IF: 17.6

2021-04-01

Nano Energy

Abstract:Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in large-scale integration systems due to its high switching speed and cost-effective priority. Transition metal oxides have been utilized as the switching layer owing to the stable structure and variable oxidation state of transition metals. In this work, a functional RRAM device (Pt/AlOx/ZnO/Ti) was fabricated, and the resistive switching process could be well controlled by the voltage supply. The device exhibited low power consumption (0.586 nW for SET, 0.596 nW for RESET, and forming free), self-current compliance in LRS (106 Ω with approximately 10−5 A), and high cycling endurance (up to 3 ×103 times). The switching mechanism has been discussed in detail and comprehensively analyzed by scanning transmission electron microscope (STEM) and electrons energy loss spectrum (EELS). The results provide strong evidence of the continuous oxygen vacancy filaments in ZnO and discontinuous oxygen-deficient regions in AlOx. The switching mechanism for complex structure RRAM is verified and a potential candidate selection with excellent electrical properties is demonstrated.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Xiaofeng Zhao,Ping Song,Huiling Gai,Yi Li,Chunpeng Ai,Dianzhong Wen

DOI: https://doi.org/10.3390/mi11100889

IF: 3.4

2020-01-01

Micromachines

Abstract:In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.
Resistance Random Access Memory Performance of MgZnO-based Device with Varying Film Thickness by an Asymmetric Electrode of Au/ITO

Zilong Zhang,Keyun Gu,Xinyu Zhou,Haofei Huang,Jian Huang,Ke Tang,Jieyu Zhang,Meiyong Liao,Linjun Wang

DOI: https://doi.org/10.1016/j.mtla.2021.101001

2021-01-01

Materialia

Abstract:A great understanding of the manipulation of film thickness has led to a number of advances in controlling film-based device properties. Here, the resistance random access memory (RRAM) device of Au/magnesium-doped zinc oxide (MZO)/indium tin oxide (ITO) configuration was fabricated with the asymmetric electrode. The variation of MZO film thickness was designed to tailor the RRAM performance. It can be concluded that, the RRAM device with too thin MZO film is extremely vulnerable to be broken down. While the film is too thick, it is difficult to form conductive filaments, which results in poor resistance-switching characteristics. The good state retention time and fatigue resistance characteristics of the RRAM device can be achieved with 160 nm-thick MZO film. Based on the influence of MZO film thickness on the RRAM performance, a resistance switching mechanism of MZO-RRAM device is proposed with the asymmetric electrode.
Resistive switching mechanism of Cu doped ZrO2-based RRAM

Shibing Long,Qi Liu,Hangbing Lv,YingTao Li,Yan, Wang,Sen Zhang,WenTai Lian,Ming Liu

DOI: https://doi.org/10.1109/ICSICT.2010.5667589

2010-01-01

Abstract:ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching characteristics according to a series of convincing evidences. Temperature-dependent resistive switching behaviors show that a metallic conductive channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic channel is the nanoscale Cu conductive filament. The metal filaments are observed by TEM and the component is also confirmed. We propose that the set and reset process stem from the thermal effect assisted electrochemical reactions.
Memristors Based on Amorphous ZnSnO Films

Bojing Lu,Yangdan Lu,Hangjian Zhu,Jiaqi Zhang,Shilu Yue,Siqin Li,Fei Zhuge,Zhizhen Ye,Jianguo Lu

DOI: https://doi.org/10.1016/j.matlet.2019.04.086

IF: 3

2019-01-01

Materials Letters

Abstract:Memristors based on amorphous oxide semiconductors (AOSs) have attracted considerable attention recently. Here we present the study of amorphous ZnSnO (a-ZTO) memristors. The a-ZTO memristors were fabricated with Al layers as the bottom and top electrodes. The a-ZTO thin films, deposited by pulsed laser deposition, could be formed on the Al layer uniformly, and the Al layers were effective electrodes for a-ZTO memristors. It was verified that the a-ZTO memristors had obvious resistive switching (RS) behaviors, with a high ratio (similar to 10(3)) of high-resistance and low-resistance states. Almost the same current-voltage curves were observed for five cycles, revealing the stable and reliable nature of devices. Our study demonstrated the a-ZTO memristors is a potential candidate to produce high-quality resistive random-access memories, which may open a path to applications of memristors based on indium-free AOSs. (C) 2019 Elsevier B.V. All rights reserved.
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Pei-Yu Wu,Hao-Xuan Zheng,Chih-Cheng Shih,Ting-Chang Chang,Wei-Jang Chen,Chih-Cheng Yang,Wen-Chung Chen,Mao-Chou Tai,Yung-Fang Tan,Hui-Chun Huang,Xiao-Hua Ma,Yue Hao,Tsung-Ming Tsai,Simon M. Sze

DOI: https://doi.org/10.1109/LED.2020.2968629

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO 2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH 3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.
Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Xingsen GAO,Fei ZHANG,Yuanbin Lin,Zengxing Lu

DOI: https://doi.org/10.6054/j.jscnun.2013.09.011

2013-01-01

Abstract:With the rapid developing of semiconductor industry and the increasing inegration level of electronic de -vices , the characteristicl dimention of the microelectronic devices become smaller and samller , the tranditional non-volatile memories based on strorages will reach their physical and teachnological limit .As a kind of new immerging memories, resistive random access memory ( RRAM) attracts intensive interests owing to its advantages such as simple structure , compatible with conventional CMOS process , high writing and reading speeds , low writing current etc.This paper gives a brief overview on transition metal oxides thin film based RRAM , including the basic working principles , performance criterions , material issues , resistive switching mechanism , as well as challenges on the way to real applications .
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Xun Cao,Xiaomin Li,Xiangdong Gao,Xinjun Liu,Chang Yang,Rui Yang,Ping Jin

DOI: https://doi.org/10.1088/0022-3727/44/25/255104

2011-01-01

Abstract:A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. Reliable and reproducible bipolar resistance memory switching performances are achieved. Fast and stable switching behaviour in the voltage pulse mode is demonstrated with set and reset durations of 50 ns and 100 ns, respectively. The transmittance of the device is from 64% to 82% in the visible region. All-ZnO-based transparent RRAM will open a route towards see-through memory devices.
AlNxOy Film Prepared by Atomic Layer Deposition and Its Research in Resistive Random Access Memory

Yu LIU,Jue YU,Wei HUANG,Jun LI,Jianyuan WANG,Jianfang XU,Cheng LI,Songyan CHEN

DOI: https://doi.org/10.6043/j.issn.0438-0479.201703001

2017-01-01

Abstract:AlNx Oy film deposited by plasma-enhanced atomic layer deposition(PE-ALD) and Ag electrode sputtered by magnetron sputtering are used to fabricate resistive random access memory (RRAM) devices with a structure of Ag/AlNx Oy/Pt.The device can be resistively switched in the bipolar mode with the set voltages distributed in a narrow range of 0.5 V.The high/low resistance ratio lies beyond 103.The device is also found to be electroforming-free.Low-temperature I-U measurement show that the resistance of the ohmic low resistance state is positively proportional to the temperature,suggesting the metallic filament property.The switching mechanism of the device is explained by the formation and therupture of the Ag filaments in A1Nx Oy films.
Influence of Metal Electrode on the Performance of ZnO Based Resistance Switching Memories

Xueting Wang,Haolei Qian,Liao Guan,Wei Wang,Boran Xing,Xiaoyuan Yan,Shucheng Zhang,Jian Sha,Yewu Wang

DOI: https://doi.org/10.1063/1.4996975

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:Resistance random access memory (RRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate metal (Ag, Ti, or Pt)/ZnO/Pt RRAM cells and then systematically investigate the effects of different top electrodes and their performance. With the formation and rupture of Ag-bridge and the shapeless oxygen vacancy filaments under a series of positive and negative bias, the set and reset processes have been successfully conducted in the Ag/ZnO/Pt device with very low work voltage, high on-off ratio, and good endurance. When applying the voltage bias to the Ti/ZnO/Pt device, the interfacial oxygen ions' migration causes the redox reaction of the conducting filament's oxygen vacancies, leading to the formation and rupture of the conducting filaments but in a relatively poor endurance. At the same time, for the Pt/ZnO/Pt device, once the filaments in the functional layer consisting of oxygen vacancies are formed, it is difficult to disrupt, resulting in the permanent low resistance state after a forming-like process. The results demonstrated that the devices with a metallic conductive bridge mechanism show much better switching behaviors than those with an oxygen ion/vacancy filament mechanism.
Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WOX/ZnO Bilayer Structure

Qi Xue,Liang Cao,Ke Zhang,Huiqin Ling,Yunwen Wu,Ming Li,Tao Hang

DOI: https://doi.org/10.1109/icept56209.2022.9872667

2022-01-01

Abstract:Among the various emerging storage technologies, resistive random-access memory (RRAM) has been identified as the most potential competitor for future application of nonvolatile information storage and neuromorphic computing. However, the reliability and performance of the device are still a considerable challenge. Here, a bilayer oxide structure WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /ZnO was applied as the functional layer of the RRAM. The WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> layer prepared by physical deposition act as the oxygen vacancy source, and the ZnO layer fabricated by the combustion method serves as the resistive switching layer. Through oxygen vacancy engineering, the Pt/WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /ZnO/ITO exhibits outstanding performance, including extremely low programming voltage (0.7 V/−0.3 V), desirable memory window (˃10 2 ), and enhanced device reliability. This work provides a feasible method to optimize device performance and is expected to facilitate the commercialization of RRAM devices.
Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications

Zhong-Hui Fang,X. P. Wang,Guo‐Qiang Lo,D. L. Kwong

DOI: https://doi.org/10.5281/zenodo.1335656

2013-01-01

Abstract:— In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias .
A First-Principle Analysis of Resistive Switching Enhancement of HfO2 Thin Film Induced by Zinc Doping Method

Mingyi Rao,Lin Chen,Qing-Qing Sun,Peng Zhou,David Wei Zhang

DOI: https://doi.org/10.1109/icsict.2014.7021374

2014-01-01

Abstract:Significant performance enhancement of HfO 2 based resistive switching random access memory (RRAM) devices were achieved by Zn doping method. The non-volatile memory properties including operation voltage and uniformity were fully characterized. What's more, from first-principle analysis results, The Zn-3d states are shifted upward when the oxygen vacancy locates at the nearest neighboring site of Zn atom. Dopant-assisted formation and migration of oxygen vacancies would induce the suppression of randomicity of conductive filaments' behavior, which is possible lead to such RRAM characteristics improvement.

Amorphous ZnO Based Resistive Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Studies on Structural and Resistive Switching Properties of Al/Zno/Al Structured Resistive Random Access Memory

Resistance Switching Characteristics of Ag/ZnO/graphene Resistive Random Access Memory

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Resistance Random Access Memory Performance of MgZnO-based Device with Varying Film Thickness by an Asymmetric Electrode of Au/ITO

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Memristors Based on Amorphous ZnSnO Films

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

AlNxOy Film Prepared by Atomic Layer Deposition and Its Research in Resistive Random Access Memory

Influence of Metal Electrode on the Performance of ZnO Based Resistance Switching Memories

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications

A First-Principle Analysis of Resistive Switching Enhancement of HfO2 Thin Film Induced by Zinc Doping Method