Abstract:This paper presents the synthesis and characterization of cobalt and manganese co-doped zinc oxide (ZnO) ferromagnetic nanoparticles via a chemical precipitation technique. X-ray diffraction (XRD) analysis confirms the wurtzite-type order of the nanoparticles, with cobalt and manganese ions replacing zinc ions at tetrahedral sites. The nanoparticles exhibit ferromagnetic behavior below 400 K, supported by negative Curie–Weiss constants, suggesting the presence of spinel-type impurity phases or intrinsic features of the doped samples. Additionally, the study explores the resistive switching characteristics of ferromagnetic memristors fabricated using sputtering procedures, incorporating 1% co-doped ZnO layers between Pt and Ag electrodes. The memristors demonstrate robust analog resistance switching over 80 cycles, with precise voltage control. Augmented grain volume and oxygen vacancies in the doped ZnO layers indicate grain growth, reducing grain boundaries and enhancing electrical response. Further investigation reveals asymmetrical resistance switching behavior, attributed to underlying electrochemical processes within the devices. Statistical analysis demonstrates consistent resistive switching over numerous pulse cycles at room temperature, highlighting exceptional thermal stability. The switching mechanism is elucidated by the migration of Ag ions during the "set" process, forming conductive pathways, and filament rupture during the "reset" process. Current–voltage (I–V) curves suggest space-charge limited current, indicating the creation of conductive filaments. The study showcases the ability to precisely modulate resistance in response to different voltages, presenting the potential of the memristors as neuromemristive systems for biological synapses.

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