Effect of Surface Carbon Contamination on the Chemical States of N-doped ZnO Thin Films

Hong Zhang,Wanjun Li,Guoping Qin,Liang Fang,Haibo Ruan,Mi Tan,Fang Wu,Chunyang Kong

DOI: https://doi.org/10.1007/s00339-018-1565-x

2018-01-01

Applied Physics A

Abstract:Nitrogen-doped ZnO thin films [ZnO:N] and intentional surface carbon-contaminated ZnO:N thin films [ZnO:N@C] were grown on quartz substrates by radio frequency magnetron sputtering deposition method. The structural, electrical and optical properties as well as chemical states of elements were investigated by means of X-ray diffraction (XRD), Hall effect measurement (Hall), UV–Vis–Near infrared spectrophotometer and X-ray photoelectron spectroscopy (XPS). The results indicate that surface carbon contamination almost does not affect the band gap of ZnO:N thin films but has a strong impact on the crystal quality of ZnO:N thin film surface and results in a significant increase in tensile stress. The XPS analysis shows that the effect of surface carbon contamination treatment on the chemical states of ZnO:N thin films is remarkable. Because the stability of Zn–N bonds in N-rich local environments is nowhere near that of those in O-rich local environments, the N atoms in N-rich local environments easily bond with surface carbon atoms to form undesirable C–N bonds, thus resulting in a decrease of NO acceptors in N-rich local environments. Obviously, it is unfavorable to subsequently prepare high stability of N-doped p-type ZnO thin films.