Enhancement of Thermoelectric Performance of Cu2Se by K Doping

Zheng Zhu,Yuewen Zhang,Hongzhang Song,Xin-Jian Li

DOI: https://doi.org/10.1007/s00339-018-2299-5

2018-01-01

Abstract:Potassium-doped Cu 2 Se compounds were fabricated using a combined process of hydrothermal synthesis and hot-pressed sintering. The effects of potassium doping on the thermoelectric properties were studied. Compared with the K-free sample, the Seebeck coefficients and the resistivity of K-doped samples increase. This is due to the annihilation of the intrinsic holes with the external electrons introduced by K doping in Cu 2 Se, which eventually leads to the decrease of the hole concentration. Especially, some micro-pores are introduced by K doping, together with reduced carrier concentration that result in low thermal conductivity. Finally, for the nominal component Cu 1.97 K 0.03 Se (EPMA measured component Cu 1.9891 K 0.0108 Se), the peak value of ZT reaches 1.19 at 773 K, which is 47% larger than that of pure Cu 2 Se (ZT max = 0.81).