Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures.

Daoxin Dai
DOI: https://doi.org/10.1109/JPROC.2018.2822787
IF: 20.6
2018-01-01
Proceedings of the IEEE
Abstract:Various passive photonic integrated devices have been developed successfully with silicon-on-insulator (SOI) nanowires in the past decade. It is well known that SOI-nanowire waveguides have ultrahigh index contrast (Δ) and ultrahigh birefringence. As a result, the structures and the design rules of a silicon photonic device are probably very different from the conventional case of using low-Δ opti...
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