Amorphous Silicon in Nanophotonic Technology

Lech Wosinski,Liu,Matteo Dainese,Daoxin Dai

2007-01-01

Abstract:Silicon-on-insulator nanowire waveguides appear to be the technology for next generation of super compact integrated devices. Due to a very high refractive index contrast and strong light confineme ...

What problem does this paper attempt to address?

On-Chip Integration of Optical Nanofibers and Nanowires

Limin Tong

DOI: https://doi.org/10.3390/optofluidics2017-04431

2017-01-01

Abstract:Among various nanostructures for low-dimensional photonics, the one-dimensional nanowire is of great importance owing to its capability of routing tightly confined light fields in single-mode with least space and material requirement, minimized optical path, and high mechanical flexibility. Free-standing optical nanowires or nanofibers fabricated by either chemical growth or physical drawing techniques surpass nanowaveguides fabricated by almost all other means in terms of sidewall smoothness and diameter uniformity, conveying their low waveguiding losses.With high index contrast between the core and the surrounding, a nanowire can guide light with tightly confined large fractional evanescent waves, which enables highly localized near-field interaction between the guided fields and the surrounding media. In this talk, we show the possibility of on-chip integration of free-standing optical nanofibers and nanowires. Firstly, by embedding nanofibers with microfluidic chips, we show ultrasensitive optical sensors for physical and bio-chemical detection. Secondly, by near-field coupling of free-standing nanowires/nanofibers with silicon-on-insulator waveguides, we show hybrid photonic circuits for optical modulation and light generation on silicon chips.
Asymmetric light propagation in composition-graded semiconductor nanowires

Jinyou Xu,Xiujuan Zhuang,Pengfei Guo,Weiqing Huang,Wei Hu,Qinglin Zhang,Qiang Wan,Xiaoli Zhu,Zongyin Yang,Limin Tong,Xiangfeng Duan,Anlian Pan

DOI: https://doi.org/10.1038/srep00820

IF: 4.6

2012-01-01

Scientific Reports

Abstract:Asymmetric light propagation is crucial to the development of optical-based functional components in nanophotonics. Diverse configurations and structures have been proposed to allow asymmetrical propagation of photonic signal, but on-chip integration is difficult to achieve due to their complex structure and/or relatively large footprint. Here we report the first design and realization of asymmetric light propagation in single semiconductor nanowires with a composition gradient along the length. We show the asymmetric nanowire waveguides can be synthesized using a simple thermal evaporation and vapor transport approach without involving complicated and costly fabrication processes. Our studies demonstrate the asymmetric nanowire waveguides offer some significant advantages over previous designs, including ultra-low operation power, tunable working wavelength and nanoscale footprint, making them attractive building blocks for integrated photonic circuits.
Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures.

Daoxin Dai

DOI: https://doi.org/10.1109/JPROC.2018.2822787

IF: 20.6

2018-01-01

Proceedings of the IEEE

Abstract:Various passive photonic integrated devices have been developed successfully with silicon-on-insulator (SOI) nanowires in the past decade. It is well known that SOI-nanowire waveguides have ultrahigh index contrast (Δ) and ultrahigh birefringence. As a result, the structures and the design rules of a silicon photonic device are probably very different from the conventional case of using low-Δ opti...
Research Progress of Silicon Light Source

Shen Hao,Li Dong-Sheng,Yang De-Ren

DOI: https://doi.org/10.7498/aps.64.204208

2015-01-01

Abstract:To meet the requirements for high speed, low cost, and more information capacity, silicon photonics has been booming in recent years. Silicon photonics covers a very wide field. For the silicon photonics, researchers have successfully achieved silicon-based optical waveguides, switches, modulators, and detectors. But the problem of silicon based light source has not been really resolved, which has become a primary bottleneck for further developing the silicon photonics. The momentum of a phonon is required to allow an electron to transit from the minimum of the conduction band to the maximum of the valence band in Si because of the indirect bandgap. This two-particle process with a low probability makes it difficult to achieve high-efficiency silicon-based light source by itself. However, much effort has been made to characterize and understand the light-emission phenomena of silicon-based devices. Also, more attempts were made to enhance the emission efficiency of silicon. Practical silicon lasers are very important for silicon photonics and have been a long goal for semiconductor scientists. A number of important breakthroughs in the past decade have focused on silicon as a photonic platform thanks to the efforts of scientists. In this review, we introduce the recent progress of silicon-based luminescence materials, silicon light emitting diodes and silicon lasers. In the first part of this paper, common types of silicon-based light emitting materials, including porous silicon, silicon nanocrystals, rare earth-doped silicon, silicon defect emission, germanium on silicon and semiconducting silicides are comprehensively reviewed. Among them, the quantum effects and surface effects of low-dimensional silicon can greatly enhance the light emission efficiency. The erbium atoms in silicon-based rare earth materials can produce the light emission at communication wavelength band independently of the host. The transition from the lowest excited state to the 4f ground state yields light at 1.54 m. Moreover the emission energy is independent of the temperature due to the inner atomic transition. Group IV materials grown on silicon such as Ge and GeSn alloy can change from indirect bandgap into direct bandgap by introducing mechanically strain and modifying the component. Strong enhancement of photoluminescence and net gain emerging from the direct transition are very significant for fabricating the devices. In the second part, different light emitting diodes (LEDs) fabricated with above luminescent materials are introduced. The Si PN diodes were once popular at the earlier research stage. One approach was to modify the effective surface on high-purity single crystal silicon and the other idea was to use optically active defects in silicon. Ten years later, silicon LEDs in which the dressed-photon-phonons assisted method is used, made the Si PN diode rejuvenated. LEDs fabricated on nano-structured Si and silicon-based film were limited in the optoelectronic integration since the luminescence wavelength is not corresponding to the low-loss communication region. Although erbium-doped and Er silicate LEDs emit suitable light, their high turn-on voltage and low luminescence efficiency block the practical application. The researches of Ge-on-Si LED mainly focus on modifying the band structure by introducing strain and n-doping. In the third part, firstly we summarize the basic rules of the silicon laser. Then, we review the most recent progress in the field. Nanometer Si with periodic array can only behave unambiguous laser action using optical pumping and at very low temperature. Low threshold silicon Raman lasers with racetrack ring resonator cavities can only stop on paper also due to the difficulty in electrical pumping. The Ge-on-Si lasers operating at room temperature by optical and electrical pumping were accomplished in the past 5 years. The GeSn laser that is CMOS-compatible also came into being this year. Although so far, lasing has been implemented only by using pulsed optical pumping and stopped working at 90 K, this first demonstration of lasing in a direct-gap group IV alloy grown on standard silicon substrates is potentially an important step on the way to a platform of fully integrated silicon-based photonics. Hybrid III-V-on-Si lasers are considered as one of the most practical means due to the excellent photoelectric properties and mature preparation technology. Finally, current problems and future development direction in the silicon light source are also presented briefly.
Silicon-based Integrated Nanophotonic Circuits and Technologies

Daoxin Dai,Sailing He

DOI: https://doi.org/10.1117/2.1201202.004040

2012-01-01

SPIE Newsroom

Abstract:As integrated circuit manufacturers continue to push toward higher integration densities, one of the most promising candidate technologies to emerge is SOI (silicon-on-insulator) nanowire. Its ultra-high index contrast permits ultra-sharp bending, while the CMOS compatibility of the fabrication process indicates great potential for use in low-cost photonics integrated circuits (PICs). Significant progress toward the goal of low-loss silicon photonic devices has been made lately, in the form of reductions in the scattering loss of SOI nanowires and the coupling loss to standard single-mode fibers.1 Recently, we developed and characterized several SOI nanowire-based photonic integrated devices, including arrayedwaveguide grating (AWG) (de)multiplexers and microring resonators. The former is one of the most important components of various wavelength-division multiplexing modules and systems used for optical communications. We have developed several types of ultrasmall AWG (de)multiplexers, using novel layouts that take advantage of the sharp bending available with SOI nanowires. We have also developed SOI nanowire-based optical sensors featuring microring resonators and cascaded rings.2–4 Figure 1(a) shows a scanning electron micrograph of our 15-channel AWG router. In the present design, the many microbends help to minimize the area occupied by the 34 arrayed waveguides, as does the overlap of the two free propagation regions (FPRs). The resulting device’s total size is only 163 147 m.5 Figure 1(b) shows the measured spectral response. With 400GHz channel spacing, crosstalk between adjacent channels is around 5 8dB, mainly due to phase errors. Figure 1. (a) Scanning electron micrograph of an arrayed waveguide grating (AWG) router with microbends. (b) Spectral responses of all 15 channels. FPR: Free propagation region. FSR: Free spectral range.
Nanoscale Silicon-On-Insulator(SOI) Waveguides

ZHANG Shun-yuan,SHI Bao-sen,GUO Guang-can

DOI: https://doi.org/10.3969/j.issn.1007-6654.2008.01.018

2008-01-01

Acta Sinica Quantum Optica

Abstract:In this paper we introduce silicon nano-wire waveguides' structure、 properties and superiority compared with conventional silica fiber.Then we present the nonlinear processes in silicon waveguides such as Raman effect、 four-wave mixing and wavelength conversion efficiency,as well as progresses in optical devices and technology due to these nonlinear effects.In the end,we summarize status of silicon waveguides' research and its future.
Optical Signal Processing In Silicon Nano-Waveguides

Yikai Su,Qiang Li,Fangfei Liu,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/OECCACOFT.2008.4610555

2008-01-01

Abstract:All-optical tunable delay, dense wavelength conversion, and non return-to-zero (NRZ) to alternate-mark-inversion (AMI) format conversion are experimentally demonstrated using silicon microrings with a 450 x 250 nm cross-section size.
Silicon-based Heterostructures for Optoelectronic Synaptic Devices

Yue Wang,Xiaodong Pi,Xiaodong Pi

2023-01-01

Abstract:Silicon (Si) is one of the most important materials for very large-scale integration (VLSI) circuits, which has achieved great success in microelectronics. The advanced mature technology and the low cost of Si have attracted interest for exploring its use in optoelectronic synaptic devices. Si-based heterostructures with rationally designed energy-band alignments pave the way to optoelectronic synaptic devices with a series of advantages such as higher optical sensitivity and lower energy consumption. In this work, we introduce the use of Si-based heterostructures to develop optoelectronic synaptic devices that are based on bulk Si, Si nanomembranes (Si NMs) and Si nanocrystals (Si NCs). The working mechanisms and existing practical applications of these devices are discussed in terms of energy-band alignment. The continuous exploration of Si-based heterostructures contributes to the optoelectronic implementation of neuromorphic systems in the future.
High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides.

Jian Jian,Pengfei Xu,Hui Chen,Mingbo He,Zeru Wu,Lidan Zhou,Lin Liu,Chunchuan Yang,Siyuan Yu

DOI: https://doi.org/10.1364/OE.26.029651

IF: 3.8

2018-01-01

Optics Express

Abstract:We demonstrate hybrid amorphous silicon uniform grating couplers for efficient coupling between the standard single-mode fiber and sub-micron lithium niobate waveguides. The grating couplers exhibit coupling efficiency of -3.06 dB and 1-dB bandwidth of 55 nm. The amorphous silicon grating couplers can also provide a universal building block applicable to other photonic platforms such as silicon nitride waveguides, whose moderate refractive index values prevent high efficiency grating couplers to be fabricated in the native waveguide. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Green, W.M.J.,Xiaoping Liu,Kuyken, B.,Osgood, R.M.

DOI: https://doi.org/10.1109/ico-ip.2011.5953808

2011-01-01

Abstract:The silicon nanophotonic wire platform can be applied toward development of integrated optical devices for the generation and processing of mid-infrared light signals. The demonstration of a mid-infrared optical parametric amplifier will be reviewed, and recent work aimed at expanded gain bandwidth and reduced pump power requirements will be presented.
Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

Baets, R.,Kuyken, B.,Liu, X.,Clemmen, S.

DOI: https://doi.org/10.1364/ofc.2012.om2j.7

2012-01-01

Abstract:Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 μm.
Integrated Silicon Photonic Nanocircuits and Technologies for Optical Interconnect and Optical Sensing

Daoxin Dai,Sailing He

DOI: https://doi.org/10.1117/12.910940

2012-01-01

Abstract:Silicon-on-insulator (SOI) nanowires give a very promising way to realize ultrasmall photonic integrated devices because of the ability for ultrasharp bending as well as the CMOS compatibility. As a typical integrated-type (de) multiplexer, ultrasmall arrayed-waveguide gratings (AWG) are very attractive for many applications. We have developed several types of ultrasmall SOI-nanowire AWG with novel layouts. SOI nanowires also give a good platform for optical sensing with high sensitivity because of the enhanced evanescent field. We have developed SOI-nanowire-based optical sensors by using MZI (Mech-Zehnder interferometer)-coupled microrings and cascaded rings. We also note that the size of an SOI nanowire is still limited to the order of wavelength in each direction. In contrast, surface plasmon (SP) waveguides could provide a nano-scale waveguiding and confinement of light. However, the conventional nano-scale SP waveguides are usually quite lossy. We have proposed two types of novel hybrid plasmonic waveguides to achieve nano-scale optical confinement and low-loss light propagation. Due to the ultra-high optical confinement, sub-mu m-2 hybrid plasmonic devices (e. g., power splitters) are presented. It is also shown that hybrid plasmonic waveguide enables sub-mu m bending and thus sub-mu m resonator has been also demonstrated. The hybrid plasmonic waveguides offer a way to transfer both photonic and electronic signals along the same circuit, which is attractive for active components, e. g., tunable filters and optical modulators.
Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Kuyken Bart,Liu Xiaoping,Osgood Richard M.,Baets Roel,Roelkens Gunther,Green William M.

DOI: https://doi.org/10.1557/opl.2012.1323

2012-01-01

Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
Two-Dimensional Silicon Photonic Crystal Slab Devices

Lin Gan,Chang-Zhu Zhou,Chen Wang,Rong-Juan Liu,Dao-Zhong Zhang,Zhi-Yuan Li

DOI: https://doi.org/10.1002/pssa.201026605

2010-01-01

Abstract:As silicon has a large refractive index and low loss in infrared wavelengths, it becomes an important optical material that has been widely used for integrated photonics applications. In this paper, we present some of our recent experimental works on infrared two‐dimensional air‐bridged silicon photonic crystal (PhC) slab devices that are based on both the band gap and band structure engineering. We have designed, fabricated, and characterized a series of PhC waveguides with novel geometries, resonant microcavities with fine tunability, and channel drop filters utilizing resonant coupling between waveguide and cavity. These devices are aimed to construct a more flexible network of transport channels for infrared light at micrometer/nanometer scale. We have also explored the remarkable dispersion properties of PhCs by engineering the band structures to achieve negative refraction, self‐collimation, superprism, and other anomalous dispersion behaviors of infrared light beams. We have designed and fabricated a PhC structure with negative refraction effect and used scanning near‐field optical microscopy to observe the negative refraction beam.
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
Engineering Efficient Light Sources for Silicon Photonics: III-V Nano-heterostructures Monolithically Grown on Silicon

Alisha Nanwani,Paweł Wyborski,Michael S. Seifner,Shima Kadkhodazadeh,Grzegorz Sęk,Paweł Holewa,Kresten Yvind,Elizaveta Semenova

2024-07-16

Abstract:The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its mature fabrication processes, stands as an ideal platform. However, its inherent indirect bandgap leads to inefficient light emission. To overcome this drawback, the integration of III-V materials has proven essential. These materials are recognized for their efficient light emission and superior bandgap engineering capabilities, making them indispensable in photonics and beyond. Here, we present the monolithic integration of small-volume III-V nano-heterostructures with silicon via selective area epitaxy in the pyramidal openings etched in (100)-oriented silicon substrate. The precise positioning of the nano-heterostructures is achieved using electron beam lithography. Our atomic resolution imaging and chemical analysis confirm the epitaxial nature of InP growth, revealing well-defined heterointerfaces. Each structure incorporates an InAsP quantum dot-like active medium. Optical characterization and eight-band kp calculations demonstrate energy level quantization in three spatial dimensions. The heterostructures can be engineered to cover the entire telecom wavelength range. Consequently, these InAsP/InP nano-heterostructures could serve as a gain medium for silicon-based hybrid nano-lases and nanoLED as well as quantum light sources in the telecom wavelength range.

Optics,Mesoscale and Nanoscale Physics,Materials Science
Silicon Nanophotonic Devices Based on Resonance Enhancement

Zhiping Zhou,Huaming Wu,Junbo Feng,Jin Hou,Huaxiang Yi,Xingjun Wang

DOI: https://doi.org/10.1117/1.3527260

IF: 1.179

2010-01-01

Journal of Nanophotonics

Abstract:In recent years, silicon nanophotonic devices have attracted more and more attention due to their compactness, low power consumption, and easy integration with other functions. In addition to the higher index of silicon material providing stronger light confinement, the optical resonance associated with the novel structure design also enhances the performance of nanophotonic devices and offers stronger light-matter interaction. Silicon nanophotonic devices such as polarization beamsplitters, mirrors and reflectors, slow light waveguides, and microring sensors are studied, and all of them demonstrate much better performances due to the incorporated optical resonance enhancement.
Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/GROUP4.2019.8925811

2019-01-01

Abstract:Of late, the 2 μm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 μm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.
Mid-Ir Heterogeneous Silicon Photonics

g roelkens,utsav dave,a gassenq,n hattasan,chen hu,bart kuyken,francois leo,aditya malik,m muneeb,e ryckeboer,sarah uvin,zeger hens,roel baets,yosuke shimura,f gencarelli,b vincent,roger loo,joris van campenhout,l cerutti,jeanbaptiste rodriguez,e tournie,xia chen,milos nedeljkovic,g z mashanovich,li shen,n healy,a c peacock,xiaoping liu,r m osgood,william m j green

DOI: https://doi.org/10.1117/12.2041226

2014-01-01

Abstract:In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.
Ultracompact Silicon Nanowire Circuits for Optical Communication and Optical Sensing

Daoxin Dai,Sailing He

DOI: https://doi.org/10.1109/photwtm.2011.5730028

2011-01-01

Abstract:By utilizing Si nanowires, ultracompact photonic integrated circuits are realized. Some Si hybrid plasmonic waveguides are also introduced for subwavelength optical confinement and low loss propagation. We review our recent work on Si nanophotonic integrated circuits and their applications.

Amorphous Silicon in Nanophotonic Technology

On-Chip Integration of Optical Nanofibers and Nanowires

Asymmetric light propagation in composition-graded semiconductor nanowires

Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures.

Research Progress of Silicon Light Source

Silicon-based Integrated Nanophotonic Circuits and Technologies

Nanoscale Silicon-On-Insulator(SOI) Waveguides

Optical Signal Processing In Silicon Nano-Waveguides

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides.

Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

Integrated Silicon Photonic Nanocircuits and Technologies for Optical Interconnect and Optical Sensing

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Two-Dimensional Silicon Photonic Crystal Slab Devices

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Engineering Efficient Light Sources for Silicon Photonics: III-V Nano-heterostructures Monolithically Grown on Silicon

Silicon Nanophotonic Devices Based on Resonance Enhancement

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Mid-Ir Heterogeneous Silicon Photonics

Ultracompact Silicon Nanowire Circuits for Optical Communication and Optical Sensing