Abstract:As integrated circuit manufacturers continue to push toward higher integration densities, one of the most promising candidate technologies to emerge is SOI (silicon-on-insulator) nanowire. Its ultra-high index contrast permits ultra-sharp bending, while the CMOS compatibility of the fabrication process indicates great potential for use in low-cost photonics integrated circuits (PICs). Significant progress toward the goal of low-loss silicon photonic devices has been made lately, in the form of reductions in the scattering loss of SOI nanowires and the coupling loss to standard single-mode fibers.1 Recently, we developed and characterized several SOI nanowire-based photonic integrated devices, including arrayedwaveguide grating (AWG) (de)multiplexers and microring resonators. The former is one of the most important components of various wavelength-division multiplexing modules and systems used for optical communications. We have developed several types of ultrasmall AWG (de)multiplexers, using novel layouts that take advantage of the sharp bending available with SOI nanowires. We have also developed SOI nanowire-based optical sensors featuring microring resonators and cascaded rings.2–4 Figure 1(a) shows a scanning electron micrograph of our 15-channel AWG router. In the present design, the many microbends help to minimize the area occupied by the 34 arrayed waveguides, as does the overlap of the two free propagation regions (FPRs). The resulting device’s total size is only 163 147 m.5 Figure 1(b) shows the measured spectral response. With 400GHz channel spacing, crosstalk between adjacent channels is around 5 8dB, mainly due to phase errors. Figure 1. (a) Scanning electron micrograph of an arrayed waveguide grating (AWG) router with microbends. (b) Spectral responses of all 15 channels. FPR: Free propagation region. FSR: Free spectral range.

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