Silicon Photonic Waveguides And Devices With Structural Asymmetry

Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2017.su3d.3

2017-01-01

Abstract:This paper gives a review for recent progresses on silicon photonic waveguides and devices with structural asymmetry, including special power splitters/couplers, high-performance polarization-handling devices, and efficient mode converters/(de)multiplexers.

What problem does this paper attempt to address?

Asymmetric light propagation in composition-graded semiconductor nanowires

Jinyou Xu,Xiujuan Zhuang,Pengfei Guo,Weiqing Huang,Wei Hu,Qinglin Zhang,Qiang Wan,Xiaoli Zhu,Zongyin Yang,Limin Tong,Xiangfeng Duan,Anlian Pan

DOI: https://doi.org/10.1038/srep00820

IF: 4.6

2012-01-01

Scientific Reports

Abstract:Asymmetric light propagation is crucial to the development of optical-based functional components in nanophotonics. Diverse configurations and structures have been proposed to allow asymmetrical propagation of photonic signal, but on-chip integration is difficult to achieve due to their complex structure and/or relatively large footprint. Here we report the first design and realization of asymmetric light propagation in single semiconductor nanowires with a composition gradient along the length. We show the asymmetric nanowire waveguides can be synthesized using a simple thermal evaporation and vapor transport approach without involving complicated and costly fabrication processes. Our studies demonstrate the asymmetric nanowire waveguides offer some significant advantages over previous designs, including ultra-low operation power, tunable working wavelength and nanoscale footprint, making them attractive building blocks for integrated photonic circuits.
Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Qinghuan Xu,Jifang Tao,Chonglei Sun,Jia Zhao,Zuojia Wang,Liuge Du,Xun Li

DOI: https://doi.org/10.1109/jphot.2019.2950572

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:A high-performance broadband polarization-independent directional coupler is designed by using asymmetric-waveguides configuration on a silicon-on-insulator platform. Through the design of cascaded directional couplers, the coupling characteristics of the light with the orthogonally polarized transverse electric (TE) and transverse magnetic (TM) can be manipulated, so that the coupling strength could be equivalent between TE and TM polarizations within an ultra-broadband. Couplers with 50% splitting ratio are designed and simulated for operating in the wavelength range from 1450 nm to 1650 nm for both polarizations. Within the 100 nm wavelength range from 1500 nm to 1600 nm, the deviations of splitting ratio for TE polarization and TM polarization are ±3.3% and ±6.2%, respectively. And within the 200 nm wavelength range from 1450 nm to 1650 nm, the deviations for TE polarization and TM polarization are ±9.0% and ±7.8%, respectively. The footprint of this polarization-independent directional coupler is only 21 μm × 1.6 μm.
Asymmetric Topological Valley Edge States on Silicon‐On‐Insulator Platform

Hongwei Wang,Lu Sun,Yu He,Guojing Tang,Shaohua An,Zhen Wang,Yuhan Du,Yong Zhang,Luqi Yuan,Xintao He,Jianwen Dong,Yikai Su

DOI: https://doi.org/10.1002/lpor.202100631

2022-01-01

Laser & Photonics Review

Abstract:Valley-Hall photonic topological insulators (VPTIs) provide an intriguing approach to suppress backscattering, enhance the robustness of transport, and shrink the footprints of the topological devices. However, previous works focused on the transmission characteristics of the symmetric topological waveguides with few reports on functional devices involving edge mode coupling, which hinders the implementation of various functional devices such as optical couplers/splitters, switches, filters, and etc. In this paper, a new method to manipulate the mode field distributions in topological waveguides is demonstrated by introducing asymmetric edge states, thus the mode coupling with an arbitrary coupling ratio can be achieved between topological waveguides. As an example, a topological power splitter with a 33:67 splitting ratio is demonstrated experimentally. In addition, to verify the robust transmission property of the topological photonic devices, a high-speed data transmission experiment for a topological power splitter is performed and a high data rate of 128 Gb s(-1) is achieved. These results promise a new method to manipulate the mode field distribution in topological waveguides and devices that may find wide applications in diverse fields such as optical communications, nanophotonics, and quantum information processing.
Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures.

Daoxin Dai

DOI: https://doi.org/10.1109/JPROC.2018.2822787

IF: 20.6

2018-01-01

Proceedings of the IEEE

Abstract:Various passive photonic integrated devices have been developed successfully with silicon-on-insulator (SOI) nanowires in the past decade. It is well known that SOI-nanowire waveguides have ultrahigh index contrast (Δ) and ultrahigh birefringence. As a result, the structures and the design rules of a silicon photonic device are probably very different from the conventional case of using low-Δ opti...
Asymmetric Directional Couplers Based on Silicon Nanophotonic Waveguides and Applications

Daoxin Dai,Shipeng Wang

DOI: https://doi.org/10.1007/s12200-016-0557-8

2016-01-01

Frontiers of Optoelectronics

Abstract:Directional couplers (DCs) have been playing an important role as a basic element for realizing power exchange. Previously most work was focused on symmetric DCs and little work was reported for asymmetric directional couplers (ADCs). In recently years, silicon nanophotonic waveguides with ultra-high index contrast and ultra-small cross section have been developed very well and it has been shown that ADCs based on silicon-on-insulator (SOI) nanophotonic waveguides have some unique ability for polarization-selective coupling as well as mode-selective coupling, which are respectively very important for polarization-related systems and mode-division-mulitplexing systems. In this paper, a review is given for the recent progresses on silicon-based ADCs and the applications for power splitting, polarization beam splitting, as well as mode conversion/(de)multiplexing.
Silicon photonic integrated devices for mode-division-multiplexing

Daoxin Dai

DOI: https://doi.org/10.1109/OECC.2018.8729860

2018-01-01

Abstract:This paper gives a review and discussion on Silicon photonic integrated devices for mode-division-multiplexing, including sharp multimode waveguide bends and multichannel mode (de)multiplexers.
Silicon Photonic Devices for Wavelength/Mode/Polarization Multiplexing

Tao CHU,Defen GUO,Weike WU

DOI: https://doi.org/10.3969/j.issn.1009-6868.2017.05.006

2018-01-01

Abstract:In this paper,various silicon photonic devices designed for wavelength/mode/polarization multiplexing/demultiplexing are proposed,including arrayed waveguide grating (AWG) and etched diffraction grating (EDG),mode Mux/DeMux devices,polarization splitting grating coupler,and polarization splitting rotating device. With these novel devices,the following results can be achieved: (1) AWG could be formed by single step etching process; (2) EDG insertion loss is greatly reduced; (3) mode splitting device bandwidth increases,while the insertion loss is reduced; (4) the coupling efficiency of the polarization splitting grating coupler is effectively improved;(5) the insertion loss and bandwidth of the polarization splitting rotating device are also significantly improved. It is believed that the Mux/DeMux technologies on dimensions of wavelength/mode/polarization will be strongly supported by these silicon photonic devices,which are compatible with complementary metal oxide semiconductory (CMOS)-180 nm processing technologies.
Silicon Photonic Devices for Multiplexing and Switching

Daoxin Dai,Lijia Song,Dajian Liu

DOI: https://doi.org/10.1364/cleo_si.2022.sth2g.4

2022-01-01

Abstract:Our recent progresses in silicon photonic devices for multiplexing and switching are reviewed. The first part is for on-chip wavelength-division-(de)multiplexers, including optical filters based on microring resonators (MRRs) and waveguide gratings. The second part including photonic switches based on MZIs.
High-Performance Passive Silicon Photonic Waveguide Devices: Progress and Challenges

Liu Dajian,Zhao Weike,Zhang Long,Song Lijia,Guo Jingshu,Xie Yiwei,Li Huan,Yu Zejie,Liu Liu,Shi Yaocheng,Dai Daoxin

DOI: https://doi.org/10.3788/AOS202242.1713001

2022-01-01

Acta Optica Sinica

Abstract:Due to its prominent advantages such as complementary metal oxide semiconductor (CMOS) compatibility and high integration, silicon photonics technology is recognized as the most promising new generation of mainstream photonic integration technologies and has thus attracted great attention worldwide. On the one hand , great progress has been made in the research field of passive/active silicon photonic devices and integrated circuits in recent years. Silicon photonics technology has ushered in a broader space for application owing to the rapid development of emerging fields, such as optical communication, optical interconnection, optical sensing, optical measurement, and optical computing. On the other hand, silicon photonic devices and circuits are also exposed to various challenges as they are desired to achieve better performance, higher density, and larger scale. This paper focuses on high-performance passive silicon photonic waveguide devices for wavelength division multiplexing, polarization multiplexing, mode multiplexing as well as hybrid multiplexing. particularly on their performance breakthrough and function expansion. Finally, the prospects of silicon photonic waveguide devices are discussed and presented.
Silicon Nanophotonic Integrated Devices for On-Chip Multiplexing and Switching

Daoxin Dai

DOI: https://doi.org/10.1109/jlt.2016.2587727

IF: 4.7

2017-01-01

Journal of Lightwave Technology

Abstract:A review is given on our recent progresses in silicon nanophotonic integrated devices for multiplexing and switching, which are key elements in a multichannel multiplexed photonic networks-on-chip. On-chip (de)multiplexers include wavelength-division-multiplexing filters based on arrayed-waveguide gratings and microring resonators, polarization-division-multiplexing devices like polarizers, polarization-beam splitters and polarization rotators, mode-division-multiplexing devices, and some novel hybrid (de)multiplexers enabling more than one multiplexing technologies simultaneously. Thermal-switchable silicon photonic devices are also discussed regarding the increasing demands for reconfigurable photonic networks-on-chip, including high-performance optical switches and reconfigurable add-drop multiplexers.
Silicon photonic devices for wavelength/mode-division-multiplexing

Daoxin Dai,Zhuoning Zhu,Weike Zhao,Yiwei Xie,Dajian Liu

DOI: https://doi.org/10.1117/12.2588925

2021-01-01

Abstract:Silicon photonics is recognized as one of the most promising platforms for on-chip optical interconnects. In order to further enhance the on-chip optical-interconnect link capacity, silicon photonic devices for advanced multiplexing technologies have been widely investigated, including wavelength-division-multiplexing (WDM), mode-division-multiplexing (MDM), as well as the hybrid multiplexing. This paper gives a review for our recent progresses in the development of silicon-based on-chip wavelength/mode-division-multiplexers.
Subwavelength Structured Silicon Waveguides and Photonic Devices

Lu Sun,Yong Zhang,Yu He,Hongwei Wang,Yikai Su

DOI: https://doi.org/10.1515/nanoph-2020-0070

IF: 7.5

2020-01-01

Nanophotonics

Abstract:Subwavelength structures such as subwavelength gratings (SWGs) and subwavelength metamaterials are capable of tailoring the optical properties of materials and controlling the flow of light at the nanoscale. The effective indices of the subwavelength structured strip and slab waveguides can be changed in a wide range by choosing an appropriate duty cycle or a filling factor of silicon, which provides an effective method to manipulate the optical field and achieve effective index matching for functional devices. Recent advances in nanofabrication techniques have made it possible to implement subwavelength structures in silicon strip and slab waveguides. Here we review various approaches used to design subwavelength structures and achieve exotic optical responses and discuss how these structures can be used to realize high-performance silicon photonic devices. Both one-dimensional SWG devices and two-dimensional subwavelength metamaterial devices are covered in this review, including subwavelength structure-based polarization handling devices, mode manipulation devices, and building blocks for integrated optical interconnects. Perspectives on subwavelength structured silicon photonic devices are also discussed.
Recent Advances in Photonic Integrated Circuits

Jian-Jun He

DOI: https://doi.org/10.1117/12.691809

2006-01-01

Abstract:Some recent advances in photonic integrated circuits are presented, including an InP-based monolithically integrated optical channel monitor, an arrayed waveguide grating (AWG) triplexer and a novel design of polarization insensitive AWGs. The optical channel monitor comprises a flat-field echelle grating and a slab photodetector array. The channel passband is flattened and widened without loss penalty. The shape of the slab waveguide detectors and the layer structure are optimized to obtain low crosstalk and low polarization dependence. It also has a smaller size due to the elimination of output waveguides. For triplexers in fiber access networks, a cross-order AWG design is proposed to overcome the device layout difficulty due to the wide spectral range of the wavelength channels. The spectral periodicity of the grating is utilized to reduce the free spectral range requirement. Consequently, the AWG can operate at a higher diffraction order with a smaller overall size. Finally, a novel design of a polarization insensitive arrayed waveguide grating is presented. Unlike conventional AWGs where the optical path length difference is obtained only in the arrayed channel waveguides, we design the star coupler regions according to Rowland circle construction with an oblique incidence/diffraction angle. As a result, the optical path length difference is produced in both the channel waveguides and the slab waveguide regions. By using the birefringence difference between the channel waveguide and the slab waveguide, a polarization dispersion compensated AWG is realized without any additional fabrication step.
Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

Daoxin Dai,Sailing He

DOI: https://doi.org/10.1117/12.808474

2009-01-01

Abstract:In wavelength-division multiplexing systems, it is important to develop various wavelength-selective components to have flexible and reconfigurable nodes. When using conventional optical waveguides with low index contrast, the sizes of these wavelength-selective components are usually several cm(2), which is too large to integrate more components in a single wafer or chip. In order to improve the integration density and reduce the cost, it is desirable to minimize the component sizes. In our case, two kinds of strongly-confined optical waveguides on silicon wafer are considered for compact wavelength-selective devices. One is the popular silicon-on-insulator (SOI) nanowire and the other is SU-8 strip optical waveguide with an air cladding and a SiO2 insulator layer on a Si substrate. In this paper, we give a review of our recent work on wavelength-selective photonic integrated devices based on these two kinds of silicon-based optical waveguides with strong-confinements. Arrayed-waveguide grating (AWG) and microring resonator (MRR), which are two typical wavelength-selective components are included. First we give a review for several new layouts for SOI-nanowire AWG to have a further size-reduction and our novel designs for diminishing the polarization dependency of AWGs. Secondly we present the design and fabrication of multimode interference (MMI) couplers for MRRs. A novel design method for tapered MMI couplers is presented and the diminishment of polarization in a MMI coupler is proposed by optimizing the tapered MMI section. We also present our experimental results on optical sensor combining MRRs and micro-fluid channel. The measured sensitivity is about 180nm/RIU.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
State-Of-The-Art And Perspectives On Silicon Waveguide Crossings: A Review

Sailong Wu,Xin Mu,Lirong Cheng,Simei Mao,H. Y. Fu

DOI: https://doi.org/10.3390/mi11030326

IF: 3.4

2020-01-01

Micromachines

Abstract:In the past few decades, silicon photonics has witnessed a ramp-up of investment in both research and industry. As a basic building block, silicon waveguide crossing is inevitable for dense silicon photonic integrated circuits and efficient crossing designs will greatly improve the performance of photonic devices with multiple crossings. In this paper, we focus on the state-of-the-art and perspectives on silicon waveguide crossings. It reviews several classical structures in silicon waveguide crossing design, such as shaped taper, multimode interference, subwavelength grating, holey subwavelength grating and vertical directional coupler by forward or inverse design method. In addition, we introduce some emerging research directions in crossing design including polarization-division-multiplexing and mode-division-multiplexing technologies.
Mode/Polarization Manipulation in Silicon Photonics

Daoxin Dai,Ke Ma,Hao Wu

DOI: https://doi.org/10.1088/1742-6596/844/1/012039

2017-01-01

Journal of Physics Conference Series

Abstract:Mode-division-multiplexing and polarization-division-multiplexing are becoming very important to enhance the capacity of single-wavelength carrier. One of the keys is the realization of efficient mode/polarization manipulation. Silicon photonics provides an excellent platform to achieve high-performance on-chop mode/polarization manipulation. This paper gives a review for our recent work on the high-performance silicon photonic devices for mode/polarization manipulation.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Mode Conversion/coupling for Silicon Nanophotonics

Daoxin Dai

DOI: https://doi.org/10.1109/piers.2016.7734233

2016-01-01

Abstract:Several nanophotonic waveguides with ultra-high index contrast and ultra-small cross section have been developed on silicon to enable nanophotonic integrated circuits (PICs) with high integration density. Various silicon nanophotonic devices have been demonstrated successfully and become very popular now. For these devices, it is usually indispensable to utilize the mode coupling/conversion process in some structures, e.g., adiabatic waveguide tapers, and directional couplers. In recent years, it has been realized that the mode conversion/coupling for silicon nanophotonic waveguides with ultra-high index-contrast Δ and nanoscale cross sections might become very different from those conventional low-Δ optical waveguides with large cross sections. There might be some unique characteristics of mode coupling and conversion because of the possibility of large cross-sectional asymmetry and ultra-high birefringence. As a result, the design rules might be modified and some novel applications can be explored. For example, very efficient (100%) mode conversion between the eigenmodes (e.g., from the fundamental mode to the higher-order mode) was observed in a long gradually-varying (adiabatic) SOI-nanowire taper. In this paper we give a review for the recent work on mode conversion/coupling in silicon nanophotonic waveguides and the applications, including the following two parts. The first on is the polarization-dependent mode converters with an adiabatic taper based on waveguides with asymmetrical cross sections in the vertical direction. The second one is the mode coupling/conversion in an asymmetrical directional coupler (ADC), which is useful to realize ultrasmall polarization-beam splitters (PBS) as well as ultra-compact broadband mode multiplexers.
Multi-functional silicon photonic integrated circuits with ultra-compact arrayed-waveguide gratings (Invited)

Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2015.asu1b.1

2015-01-01

Abstract:This paper gives a review for the recent work on silicon photonic integrated circuits based on ultra-compact arrayed-waveguide gratings (AWGs), e.g., hybrid (de)multiplexers with multi-wavelengths and multimodes or dual-polarizations, reconfigurable optical add-drop multiplexers integrating AWGs with optical switches, etc.

Silicon Photonic Waveguides And Devices With Structural Asymmetry

Asymmetric light propagation in composition-graded semiconductor nanowires

Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Asymmetric Topological Valley Edge States on Silicon‐On‐Insulator Platform

Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures.

Asymmetric Directional Couplers Based on Silicon Nanophotonic Waveguides and Applications

Silicon photonic integrated devices for mode-division-multiplexing

Silicon Photonic Devices for Wavelength/Mode/Polarization Multiplexing

Silicon Photonic Devices for Multiplexing and Switching

High-Performance Passive Silicon Photonic Waveguide Devices: Progress and Challenges

Silicon Nanophotonic Integrated Devices for On-Chip Multiplexing and Switching

Silicon photonic devices for wavelength/mode-division-multiplexing

Subwavelength Structured Silicon Waveguides and Photonic Devices

Recent Advances in Photonic Integrated Circuits

Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

State-Of-The-Art And Perspectives On Silicon Waveguide Crossings: A Review

Mode/Polarization Manipulation in Silicon Photonics

Development of Silicon Photonic Devices for Optical Interconnects

Mode Conversion/coupling for Silicon Nanophotonics

Multi-functional silicon photonic integrated circuits with ultra-compact arrayed-waveguide gratings (Invited)