Abstract:The control of optical and transport properties of semiconductor heterostructures is crucial for engineering new nanoscale photonic and electrical devices with diverse functions. Core-shell nanowires are evident examples of how tailoring the structure, i.e., the shell layer, plays a key role in the device performance. However, III-V semiconductors bandgap tuning has not yet been fully explored in nanowires. Here, a novel InAs/AlSb core-shell nanowire heterostructure is reported grown by molecular beam epitaxy and its application for room temperature infrared photodetection. The core-shell nanowires are dislocation-free with small chemical intermixing at the interfaces. They also exhibit remarkable radiative emission efficiency, which is attributed to efficient surface passivation and quantum confinement induced by the shell. A high-performance core-shell nanowire phototransistor is also demonstrated with negative photoresponse. In comparison with simple InAs nanowire phototransistor, the core-shell nanowire phototransistor has a dark current two orders of magnitude smaller and a sixfold improvement in photocurrent signal-to-noise ratio. The main factors for the improved photodetector performance are the surface passivation, the oxide in the AlSb shell and the type-II bandgap alignment. The study demonstrates the potential of type-II core-shell nanowires for the next generation of photodetectors on silicon.

GaAs/AlGaAs Core-Shell Ensemble Nanowire Photodetectors

GaAs/AlGaAs Nanowire Photodetector

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Novel Type‐II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Investigation of GaAlAs Photocathode with Nanostructures Sensitive to Narrow Band 532 Nm Wavelength

Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure.

Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

Structural and Optical Characterization of Vertical GaAs/GaP Core-Shell Nanowires Grown on Si Substrates

Core–shell CdS:Ga–ZnTe:Sb p–n nano-heterojunctions: fabrication and optoelectronic characteristics

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Self-Assembled BiGaSeAs Composite Superlattice-Structured Nanowire for Broad-Band Photodetection

Ga2O3@Al2O3 Core-Shell Nanowires for High-Performance Solar-Blind Photodetectors

Self-Powered Ultraviolet-Photodetectors Based on Molecular Beam Epitaxy-Grown AlGaN Quantum-Disks Nanowires