Abstract:Van der Waals heterostructures facilitate the versatile combination of two-dimensional (2D) materials with semiconductors that possess distinctive band structures, offering a promising platform for developing photodetectors with extensive spectral range and high sensitivity. This study showcases the flawless integration of one-dimensional (1D) CdS nanowires with 2D Te nanosheets, resulting in the creation of a high-performance, mixed-dimensional heterojunction photodetector. Bandgap engineering at the CdS/Te interface promotes Type II band alignment, markedly improving the separation and transport of photo-generated charge carriers. Additionally, the interaction between materials of different dimensions significantly enhances the device’s photoresponsivity and detectivity. When operated at low bias, the photodetector displays an impressive rectification ratio of up to 8.57×103, along with superior photoelectric performance spanning the ultraviolet to visible light spectrum. Particularly under 450 nm wavelength laser illumination, the device displayed a high photoresponsivity of up to 126 A W−1, a high detectivity of 1.03×1010 Jones, an external quantum efficiency of up to 3.49×102%, and a rapid response time of 35 ms. The photoresponsivity of this device was at least an order of magnitude higher than other reported mixed-dimensional heterojunction photodetectors. The development of the 1D CdS/2D Te heterostructure opens new pathways for high-sensitivity, broad-spectrum photodetection technologies.

Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure.

High-Performance 1D CdS/2D Te Heterojunction Photodetector

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

GaAs/AlGaAs Nanowire Photodetector

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level

High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

Dual-band photodetector based on mixed-dimensional WSe2/GaN junction

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping

Recent Progresses in Improving Nanowire Photodetector Performances

Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

Regulating the bipolar response of InAs nanowire photodetector and waveguide integration