Core–shell CdS:Ga–ZnTe:Sb p–n nano-heterojunctions: fabrication and optoelectronic characteristics

li wang,hongwei song,zhenxing liu,xu ma,ran chen,yongqiang yu,chunyan wu,jigang hu,yan zhang,qiang li,linbao luo
DOI: https://doi.org/10.1039/c4tc02943g
IF: 6.4
2015-01-01
Journal of Materials Chemistry C
Abstract:In this study, we reported on the construction of p-n junctions based on crystalline Ga-doped CdS-polycrystalline ZnTe nanostructures (NSs) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. It is found that the absorption edge of CdS: Ga-ZnTe: Sb core-shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core-shell p-n junction exhibited obvious rectification characteristics with a low turn-on voltage of similar to 0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and a detectivity of 1.55 x 10(3) A W-1 and 8.7 x 10(13) cm Hz(1/2) W-1, respectively, much higher than other photodetectors with similar device configurations. The generality of this study suggests that the present coaxial CdS: Ga-ZnTe: Sb core-shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.
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