Abstract:The pursuit of sculpting materials at increasingly smaller and deeper scales remains a persistent subject in the field of micro- and nanofabrication. Anisotropic deep-reactive ion etching of silicon at cryogenic temperatures (cryo-DRIE) was investigated for fabricating arrays of vertically aligned Si nanowires (NWs) of a large range of dimensions from micrometers down to 30 nm in diameter, combined with commonly used wafer-scale lithography techniques based on optical, electron-beam, nanoimprint, and nanosphere/colloidal masking. Large selectivity of ∼100 to 120 and almost 700 was found with resists and chromium hard masks, respectively. This remarkable selectivity enables the successful transfer of patterned geometries while preserving spatial resolution to a significant extent. Depending on the requirements by applications, various shapes, profiles, and aspect ratios were achieved by varying process parameters synchronously or asynchronously. High aspect ratios of up to 100 comparable to the best result by metal-assisted wet-chemical etching and sub-μm trenches by DRIE were obtained with NW diameter of 200 nm, at an etch rate of ∼4 μm/min without being collapsed. At the same time, low surface roughness values were maintained on the NW top, sidewall, and bottom surface of ∼0.3, ∼13, and ∼2 nm, respectively, as well as high pattern fidelity and integrity, which were measured using angle-resolved Fourier microscopy, combined atomic force, and scanning electron microscopy on selected NWs. This work establishes the foundation in the controllable development of Si nanoarchitectures, especially at sub-100 nm structures, for energy-harvesting and storage, damage-free optoelectronics, quantum, photovoltaics, and biomedical devices.

Fabrication of Single-Crystal Silicon Nanotubes with Sub-10 Nm Walls Using Cryogenic Inductively Coupled Plasma Reactive Ion Etching.

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Single-crystal Superconducting Nanowires of NbSe2 Fabricated by Reactive Plasma Etching

Fabrication of Micro/Nanotubes by Mask-Based Diffraction Lithography

Fabrication of Single-Crystal Silicon Nanoslits with Feature Sizes Down to 4 nm and High Length-Width Ratios

Study on Silicon Nanopillars with Ultralow Broadband Reflectivity Via Maskless Reactive Ion Etching at Room Temperature

Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching

A Facile Synthesis of Silicon Nanowires/micropillars Structure Using Lithography and Metal-Assisted Chemical Etching Method

Structural and Optical Characteristics of Silicon Nanowires Fabricated by Wet Chemical Etching

Fabrication of Micro- and Nano- Structures for Antireflection by Chemical Etching Method

An Etching Method for Fabricating Anisotropic Silicon Nanostructures with Vertical and Smooth Sidewalls

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Si Nanowires Arrays Fabricated by Wet Chemical Etching for Antireflection and Self-Cleaning

Fabrication and optical properties of silicon nanopillar arrays with controllable surface structures

In Situ Nanoscale Refinement by Highly Controllable Etching of the (111) Silicon Crystal Plane and Its Influence on the Enhanced Electrical Property of A Silicon Nanowire

Fabrication of Micro/Nano Dual-Scale Structures by Improved Deep Reactive Ion Etching

Fabrication of antireflective silicon nanowires array

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation