Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures

Jiushuai Xu,Andam Deatama Refino,Alexandra Delvallée,Sebastian Seibert,Christian Schwalb,Poul Erik Hansen,Martin Foldyna,Lauryna Siaudinyte,Gerry Hamdana,Hutomo Suryo Wasisto,Jonathan Kottmeier,Andreas Dietzel,Thomas Weimann,Jan Kristen Prüssing,Hartmut Bracht,Erwin Peiner

DOI: https://doi.org/10.1063/5.0166284

IF: 15

2024-04-17

Applied Physics Reviews

Abstract:The pursuit of sculpting materials at increasingly smaller and deeper scales remains a persistent subject in the field of micro- and nanofabrication. Anisotropic deep-reactive ion etching of silicon at cryogenic temperatures (cryo-DRIE) was investigated for fabricating arrays of vertically aligned Si nanowires (NWs) of a large range of dimensions from micrometers down to 30 nm in diameter, combined with commonly used wafer-scale lithography techniques based on optical, electron-beam, nanoimprint, and nanosphere/colloidal masking. Large selectivity of ∼100 to 120 and almost 700 was found with resists and chromium hard masks, respectively. This remarkable selectivity enables the successful transfer of patterned geometries while preserving spatial resolution to a significant extent. Depending on the requirements by applications, various shapes, profiles, and aspect ratios were achieved by varying process parameters synchronously or asynchronously. High aspect ratios of up to 100 comparable to the best result by metal-assisted wet-chemical etching and sub-μm trenches by DRIE were obtained with NW diameter of 200 nm, at an etch rate of ∼4 μm/min without being collapsed. At the same time, low surface roughness values were maintained on the NW top, sidewall, and bottom surface of ∼0.3, ∼13, and ∼2 nm, respectively, as well as high pattern fidelity and integrity, which were measured using angle-resolved Fourier microscopy, combined atomic force, and scanning electron microscopy on selected NWs. This work establishes the foundation in the controllable development of Si nanoarchitectures, especially at sub-100 nm structures, for energy-harvesting and storage, damage-free optoelectronics, quantum, photovoltaics, and biomedical devices.

physics, applied

What problem does this paper attempt to address?

This paper attempts to address the issue of fabricating high aspect ratio silicon nanowire arrays under low-temperature conditions using Deep Reactive Ion Etching (DRIE) technology. Specifically, the researchers aim to achieve the following goals: 1. **Fabricate vertically aligned silicon nanowires of different sizes**: From micron-scale to 30-nanometer diameter silicon nanowire arrays. 2. **Improve selectivity**: Achieve selectivity of 100 to 120 when using photoresist and close to 700 when using chromium hard masks. 3. **Maintain high aspect ratio**: Achieve an aspect ratio as high as 100, comparable to the best results of metal-assisted wet chemical etching. 4. **Maintain low surface roughness**: Keep low surface roughness of 0.3, 13, and 2 nanometers on the top, side, and bottom surfaces of the nanowires, respectively. 5. **Achieve high pattern fidelity and integrity**: Ensure high pattern fidelity and integrity by measuring selected nanowires using angle-resolved Fourier microscopy, atomic force microscopy, and scanning electron microscopy. The achievement of these goals will lay the foundation for the controlled development of applications in energy harvesting and storage, damage-free optoelectronic devices, quantum devices, photovoltaic devices, and biomedical equipment.

Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Deep Reactive Ion Etching As A Tool for Nanostructure Fabrication

Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

Deep reactive ion etching of cylindrical nanopores in silicon for photonic crystals

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Silicon nano-wires grown at low temperature

Ultra high aspect-ratio and thick deep silicon etching (UDRIE)

OS1503 Development of Highly Ordered Silicon Nanowire Array

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

Solvent-Free Nanofabrication Based on Ice-Assisted Electron-Beam Lithography.

Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Fabrication of ultrahigh-aspect-ratio and periodic silicon nanopillar arrays using dislocation lithography and deep reactive-ion etching

Nanosphere lithography on silicon oxide for high aspect ratio cryo etching of vertically-align silicon structures

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers