Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Metastable Stacking-Polymorphism in Ge2Sb2Te5.

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

Stacking Polymorphism of PtSe$_{2}$: Its Implication to Layer-dependent Metal-insulator Transitions

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Vacancy-mediated electronic localization and phase transition in cubic Sb2Te3

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Stacked Ge2Sb2Te5/GeTe Multi-Level Phase-Change Memory with Asymmetric Double-Heater

Element-Resolved Atomic Structure Imaging Of Rocksalt Ge2sb2te5 Phase-Change Material

The local structural differences in amorphous Ge-Sb-Te alloys

Ab initio molecular dynamics and materials design for embedded phase-change memory

Phase change memory materials: Why are alloys of Ge, Sb, and Te the materials of choice?

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

B23-O-14 Direct Observation the Vacant Sites in the GeSbTe Metastable Polycrystalline Phase

"Stickier"-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization

In‐Plane Twinning Defects in Hexagonal GeSb 2 Te 4

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy