Note: Characterization And Test Of A High Input Impedance Rf Amplifier For Series Nanowire Detector

Chao Wan,Yufeng Pei,Zhou Jiang,Lin Kang,Peiheng Wu
DOI: https://doi.org/10.1063/1.4963855
IF: 1.6
2016-01-01
Review of Scientific Instruments
Abstract:We designed a high input impedance RF amplifier based on Tower Jazz's 0.18 mu m SiGe BiCMOS process for series nanowire detector. The characterization of its gain and input impedance with a vector network analyzer is described in detail for its specificity. The actual 15 dB gain should be the measured value subtracts 6 dB, which is easy to be ignored. Its input impedance can be equivalent to 6.7 k Omega parallel to 3.4 pF though fitting the measurement, whose accuracy is verified. The process of measurement provides a good reference to characterize the similar special amplifier with unmatched impedance. Published by AIP Publishing.
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