Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

In situ synthesis of semiconducting single-walled carbon nanotubes by modified arc discharging method

Synthesis Of Large Quantity Single-Walled Carbon Nanotubes By Arc Discharge

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

In Situ Fabrication and Graphitization of Amorphous Carbon Nanowires and Their Electrical Properties

Large Scale and High Purity Synthesis of Single-Walled Carbon Nanotubes by Arc Discharge at Controlled Temperatures

Large Scale Synthesis of Single-Wall Carbon Nanotubes by Arc-Discharge Method

Catalyst Effect on the Preparation of Single-Walled Carbon Nanotubes by a Modified Arc Discharge

Current and Arc Pushing Force Effects on the Synthesis of Single-Walled Carbon Nanotubes by Arc Discharge.

Synthesis of single -walled carbon nanotubes in reduced air atmosphere by DC arc discharge

Synthesis of single-walled carbon nanotubes with selective diameter distributions using DC arc discharge under CO mixed atmosphere

Low-cost Synthesis of Single-Walled Carbon Nanotubes by Low-Pressure Air Arc Discharge

Ultrafast Synthesis of Si Nanowires by DC Arc Discharge Method and Morphology Control

An Efficient Method to Produce Single-Walled Carbon Nanotubes by Round-Trip Arc Discharge

Direct Synthesis of High Purity Single-Walled Carbon Nanotube Fibers by Arc Discharge

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Arc Synthesis of Double-Walled Carbon Nanotubes in Low Pressure Air and Their Superior Field Emission Properties

Synthesis of High Quality Single-Walled Carbon Nanotube Silks by the Arc Discharge Technique

Length-controlled synthesis of single-walled carbon nanotubes by arc discharge with variable cathode diameters

The Effect of Electric Current on the Synthesis of Single-Walled Carbon Nanotubes by Temperature Controlled Arc Discharge

A Novel Method to Produce Large Amount Single-Walled Carbon Nanotubes by Arc Discharging

Synthesis of Single-Walled Carbon Nanotube Films with Large Area and High Purity by Arc-Discharge