Abstract:The coexistence of semiconducting and metallic single-walled carbon nanotubes (SWNTs) during synthesis is one of the major bottlenecks that prevent their broad application for the next-generation nanoelectronics. Herein, we present more understanding and demonstration of the growth of highly enriched semiconducting SWNTs (s-SWNTs) with a narrow diameter distribution. An important fact discovered in our experiments is that the selective elimination of metallic SWNTs (m-SWNTs) from the mixed arrays grown on quartz is diameter-dependent. Our method emphasizes controlling the diameter distribution of SWNTs in a narrow range where m-SWNTs can be effectively and selectively etched during growth. In order to achieve narrow diameter distribution, uniform and stable Fe-W nanoclusters were used as the catalyst precursors. About 90% of as-prepared SWNTs fall into the diameter range 2.0-3.2 nm. Electrical measurement results on individual SWNTs confirm that the selectivity of s-SWNTs is ∼95%. The present study provides an effective strategy for increasing the purity of s-SWNTs via controlling the diameter distribution of SWNTs and adjusting the etchant concentration. Furthermore, by carefully comparing the chirality distributions of Fe-W-catalyzed and Fe-catalyzed SWNTs under different water vapor concentrations, the relationship between the diameter-dependent and electronic-type-dependent etching mechanisms was investigated.

Length-controlled synthesis of single-walled carbon nanotubes by arc discharge with variable cathode diameters

Synthesis Of Large Quantity Single-Walled Carbon Nanotubes By Arc Discharge

Diameter-control of Single-Walled Carbon Nanotubes Produced by Magnetic Field-Assisted Arc Discharge

Synthesis of single-walled carbon nanotubes with selective diameter distributions using DC arc discharge under CO mixed atmosphere

Magnetic-field-induced Diameter-Selective Synthesis of Single-Walled Carbon Nanotubes

An Efficient Method to Produce Single-Walled Carbon Nanotubes by Round-Trip Arc Discharge

Synthesis of Single-Walled Carbon Nanotube Films with Large Area and High Purity by Arc-Discharge

Large Scale Synthesis of Single-Wall Carbon Nanotubes by Arc-Discharge Method

Direct Synthesis of High Purity Single-Walled Carbon Nanotube Fibers by Arc Discharge

Large Scale and High Purity Synthesis of Single-Walled Carbon Nanotubes by Arc Discharge at Controlled Temperatures

A Novel Method to Produce Large Amount Single-Walled Carbon Nanotubes by Arc Discharging

Low-cost Synthesis of Single-Walled Carbon Nanotubes by Low-Pressure Air Arc Discharge

A New Method to Fabricate Large Amount of Single-Walled Carbon Nanotubes

Synthesis of High Quality Single-Walled Carbon Nanotube Silks by the Arc Discharge Technique

Synthesis of single -walled carbon nanotubes in reduced air atmosphere by DC arc discharge

Towards the preparation of single-walled carbon nanotubes with average diameter of 1.2 nm

Carbon Nanotubes Grown on the Surface of Cathode Deposit by Arc Discharge

Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes.

Purification and characterization of single-walled carbon nanotubes produced by arc-discharge

The Effect of Electric Current on the Synthesis of Single-Walled Carbon Nanotubes by Temperature Controlled Arc Discharge

Mass-production of single-wall carbon nanotubes by arc discharge method