Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes
Feng Yang,Xiao Wang,Jia Si,Xiulan Zhao,Kuo Qi,Chuanhong Jin,Zeyao Zhang,Meihui Li,Daqi Zhang,Juan Yang,Zhiyong Zhang,Zhi Xu,Lian-Mao Peng,Xuedong Bai,Yan Li
DOI: https://doi.org/10.1021/acsnano.6b06890
IF: 17.1
2017-01-01
ACS Nano
Abstract:Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0-1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nano electronics. Up to date, the highest reported content of s-SWNTs as-grown is similar to 97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H2O vapor to modulate the structure of the intermetallic W6Co7 nanocrystals. By using the resultant W6Co7 nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of similar to 99%, in which similar to 97% is (14,4) tubes (diameter 1.29 nm). H2O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.