Abstract:A silicon carbide junction field effect transistors (SiC-JFETs) /gallium-nitride high electron mobility transistor (GaN-HEMT) hybrid power switch is proposed with scaled-up current rating enabled by parallel-connected high-voltage (HV, i.e., 1200 V) SiC-JFETs controlled by a single low-voltage enhanced-mode GaN-HEMT in a cascode configuration. Only one set of gate driver (for the GaN HEMT) is required by the cascode device and therewith higher efficiency is achieved regarding the gate-driver loss compared with a board-level parallel connection of several standalone devices (e.g., SiC MOSFETs or SiC/Si cascode devices). Key factors that affect the current-sharing balance between the parallel-connected SiC JFETs and associated matching method are systematically investigated by taking into account the specific transient behaviors of the cascode device. It is found that the variation in SiC JFETs’ threshold voltages plays the most important role in current balancing when the GaN HEMT drives the SiC JFETs internally with superior fast speed. A 1200-V/22-mΩ proof-of-concept prototype of the proposed device with two SiC JFETs in parallel is demonstrated and characterized in a comparative study considering the matching of JFETs. By matching the SiC JFETs according to their transfer curves, the current-sharing imbalance among the SiC JFETs can be limited to be less than 1.5%. This all-wide-bandgap device exhibits high-temperature stability of threshold voltage, extremely small gate-driver loss, and low interelectrode capacitances, of which features are promising for high-frequency applications.

Paralleled Operation of High-Voltage Cascode Gan Hemts

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Parallel Connection of Silicon Carbide MOSFETs Challenges, Mechanism, and Solutions

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

A GaN HEMT Integrated Power Module with Silver Sintering Processes

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues

Recent Progress of Physical Failure Analysis of GaN HEMTs

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

Comprehensive Analysis of Paralleled SiC MOSFETs Current Imbalance under Asynchronous Gate Signals

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Analytical Model and Safe-Operation-Area Analysis of Bridge-Leg Crosstalk of GaN E-HEMT Considering Correlation Effect of Multi-Parameters

Recent Advances in GaN‐Based Power HEMT Devices