Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Fu Li,Wenting Wang,Xincheng Qiu,Zhuanghao Zheng,Ping Fan,Jingting Luo,Bo Li

DOI: https://doi.org/10.1039/c7qi00436b

IF: 7.779

2017-01-01

Inorganic Chemistry Frontiers

Abstract:Improved electrical conductivity together with reduced lattice thermal conductivity is achieved for n-type cation-site Ti, Pb co-doped SnSe, resulting in an optimized thermoelectric property.

What problem does this paper attempt to address?

Enhanced thermoelectric performance of n -type PbTe bulk materials fabricated by semisolid powder processing

deqing mei,yang li,zhehe yao,hui wang,tiejun zhu,shaochen chen

DOI: https://doi.org/10.1016/j.jallcom.2014.04.116

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:The introduction of mesoscale (∼0.1–1.0μm) structures is one of effective approaches to reduce the thermal conductivity of thermoelectric materials. In this study, n-type PbTe bulk samples were fabricated by semisolid powder processing (SPP) using powders synthesized by melting. The field emission scanning electron microscope (FESEM) results showed that there were circular mesoscale pores in the grains of the samples fabricated by SPP. The mesoscale pores effectively reduced the lattice thermal conductivity by enhancing the scattering of phonons with long mean free paths. The samples fabricated by SPP had a figure of merit (ZT) value of 1.33 at 773K, which showed an enhancement of 77% compared with that of their hot-pressed counterparts. This enhancement mainly resulted from the lower lattice thermal conductivity and higher power factor of the SPP samples.
Enhanced Thermoelectric Performance in N-Type Polycrystalline SnSe by PbBr2 Doping

Debo Li,Xiaojian Tan,Jingtao Xu,Guoqiang Liu,Min Jin,Hezhu Shao,HuaJie Huang,Jianfeng Zhang,Jun Jiang

DOI: https://doi.org/10.1039/c6ra28332b

IF: 4.036

2017-01-01

RSC Advances

Abstract:By increasing the carrier concentration and the DOS effective mass, a ZT of 0.54 was achieved at 793 K.
Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Dezheng Gao,Yi Wen,Shulin Bai,Siqi Wang,Shibo Liu,Yichen Li,Lei Wang,Wujing Zang,Xianli Su,Xiang Gao,Hongyao Xie,Li‐Dong Zhao

DOI: https://doi.org/10.1002/smll.202407556

IF: 13.3

2024-10-01

Small

Abstract:This article shows that Sn can effectively fill intrinsic Pb vacancies in PbSe, significantly enhancing the mobility of the material. The dynamic doping of Cu effectively improves the electrical transport properties over a wide temperature range, and also valid to suppress the lattice thermal conductivity. The resulting PbSn0.004Se+3‰Cu obtained a maximum ZT of ≈1.7 at 800 K. Ideal thermoelectrics shall possess a high average ZT, which relies on high carrier mobility and appropriate carrier density at operating temperature. However, conventional doping usually results in a temperature‐independent carrier concentration, making performance optimization over a wide temperature range be challenging. This work demonstrates the combination of lattice plainification and dynamic doping strategies is an effective route to boost the average ZT of N‐type PbSe. Because Sn and Pb have similar ionic radii and electronegativity, this allows Sn to fill the intrinsic Pb vacancies and effectively improves the carrier mobility of PbSe to 1300 cm2 V−1 s−1. Furthermore, a trace amount of Cu is introduced into the Sn‐filled PbSe to optimize the carrier concentration. The extra Cu is situated in the interstitial sides of the lattice, which undergoes a dissolution‐precipitation process with temperature, leading to a strongly temperature‐dependent carrier density in the material. This dynamic doping effectively improves the electrical transport properties and is also valid to suppress the lattice thermal conductivity. Ultimately, the resulting PbSn0.004Se+3‰Cu obtains a maximum ZT of ≈1.7 at 800 K and an average ZT of ≈1.0, with a 7.7% power generation efficiency in a single‐arm device, showing significant potential for commercial application.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enhanced Thermoelectric Performance in Li Doped SnS Via Carrier Concentration Optimization

Yi Niu,Yide Chen,Jing Jiang,Yan Pan,Chengcheng Yang,Chao Wang

DOI: https://doi.org/10.1088/1757-899x/738/1/012016

2020-01-01

IOP Conference Series Materials Science and Engineering

Abstract:Tin sulfide (SnS) has attracted increasing attentions due to its similar band structure and crystal structure to tin selenide (SnSe). The layered structure and strong anharmonicity of these materials result in an ultralow lattice thermal conductivity, which is advantageous for the thermoelectric performance. Further enhancement in thermoelectric properties is expected to improve the carrier concentration and power factor by band structure optimization. In this work, lithium (Li) is proved to be an efficient dopant for SnS and the carrier concentration is increased to 1.3 × 1018 cm-3 at room temperature for Sn0.98Li0.02S. Calculations show that Li doping flattens the edge of the valence band and increases the number of carrier pockets in SnS, which collectively enhance the electronic transport properties. Moreover, the phonon scattering was enhanced by the nano-precipitates and increased boundaries in Sn1-xLixS, resulting in 40% reduction in thermal conductivity at room temperature. Combined with the enhanced power factor (∼3 μW cm-1 K-2 at 848 K) and low thermal conductivity (0.36 W m-1 K-1 at 848 K), the maximum ZT of 0.66 is achieved in Sn1-xLixS bulk samples at 848 K.
Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Wei Liu,Tao Hong,Shizhi Dong,Dongyang Wang,Xiang Gao,Yu Xiao,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtener.2022.100983

IF: 9.257

2022-06-01

Materials Today Energy

Abstract:PbTe is a promising thermoelectric material, but the properties in n-type PbTe need further improvement to match its advanced p-type material. In this work, the thermoelectric performance in n-type PbTe is synergistically enhanced with iodine (I) doping and SnSe alloying. The experiments show that I element is a good donor dopant to tune the carrier density and SnSe alloying can effectively balance the triple-relations between carrier mobility, carrier effective mass and lattice thermal conductivity. Thus, high carrier mobility of ∼ 755 cm2V-1s-1 results in an optimum power factor (PF) of ∼ 27.0 μWcm-1K-2 in PbTe-2%SnSe at 573 K. Microstructure observation reveals the dispersively embedded Sn-rich nanoprecipitates in PbTe-2%SnSe, which largely suppresses lattice thermal conductivity at room-temperature, from ∼ 3.41 Wm-1K-1 in PbTe to ∼ 1.01 Wm-1K-1 in PbTe-2%SnSe. Combined the optimized PF and decreased thermal conductivity, the peak ZT value of ∼ 1.5 can be obtained at 773 K in PbTe-2%SnSe. The obtained high thermoelectric performance in our work is comparable with other advanced n-type PbTe thermoelectrics and has great application potential.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

Shujie Wu,Changyuan Li,Feida Chen,Kun Yang,Chengchao Hu,Haihua Huang,Wenjing Huang,Xueli Zuo,Xiaobin Tang

DOI: https://doi.org/10.1039/d4ta04290e/v1/review3

IF: 11.9

2024-09-09

Journal of Materials Chemistry A

Abstract:As an ideal candidate for PbTe, which maintains excellent performance at mid-temperature, PbSe holds great application potential. In this work, based on an optimized dynamic doping material system, a series of entropy-enhanced n-type lead chalcogenides Pb 1− y Sn y Se 1− x Te x S x -2at%Cu ( x = 0 and y = 0; x = 0.1 and y = 0; x = 0.25 and y = 0; x = 0.25 and y = 0.125) are synthesized. The thermoelectric properties of PbSe are modulated by gradually increasing its configurational entropy through alloying with Te/S/Sn. Research results show that the increase in configurational entropy improves the crystal symmetry of PbSe and significantly increases the Seebeck coefficient while maintaining good electrical properties. The dense dislocations and nanoscale to submicron-scale incoherent precipitates generated lead to the localization of phonons, increase anharmonicity, and reduce the lattice thermal conductivity at room temperature to 0.73 W m −1 K −1 . The total thermal conductivity drops significantly by 69.8%. Consequently, the thermoelectric properties of Pb 0.875 Sn 0.125 Se 0.5 Te 0.25 S 0.25− 2at%Cu are remarkably improved, with a maximum dimensionless merit ZT max of ∼1.46 at 623 K and an average dimensionless merit ZT ave of ∼1.15 at 300–700 K. In addition, the room-temperature dimensionless merit ZT RT ∼0.64 is the highest reported for n-type PbSe. This optimization strategy of dynamic doping combined with entropy engineering to regulate electron and phonon transport demonstrates a feasible means to improve thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric Performance of Cu2SnSe3 by Synergic Effects Via Cobalt-Doping

Mannv Ding,Chunhua Bai,Yudong Lang,Yifeng Wang,Lin Pan,Xiaohui Hu,Changchun Chen,Shengping He,Kaleem Ahmad,Zeyad Almutairi

DOI: https://doi.org/10.1016/j.jallcom.2024.174272

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:Diamond-like Cu2SnSe3 has drawn intensive attention as an excellent environmentally-friendly p-type thermoelectric material. In this study, the effects of Co-doping at Sn site on its thermoelectric properties were investigated. Results revealed an effective increase in carrier concentration and enhancement of density-of-states (DOS) effective mass m⁎ due to the role of Co as acceptor and probably the contribution of its d states in the valence bands. Consequently, a remarkable power factor of up to 9.55 μW cm−1 K−2 has been achieved at 823K. In addition, lattice thermal conductivity was strongly suppressed due to the intensified phonon scattering and softening of bonding as revealed by the sound velocity analysis. Ultimately, a maximal ZT of 0.97 at 823K and an average ZT of ~ 0.7 have been achieved in Cu2Sn0.88Co0.12Se3, almost double that of the pristine one.
Thermoelectric enhancement for n-type PbS via synergistic effect of Ti doping and Cu2S compositing

Lin Gan,Fujie Zhang,Xuanwei Zhao,Yan Zhong,Qian Deng,Kun Zhang,Ran Ang

DOI: https://doi.org/10.1063/5.0130364

IF: 4

2023-01-19

Applied Physics Letters

Abstract:PbS is identified as a potential alternative candidate material for thermoelectric power generation and refrigeration, owing to the resemblance with PbTe in crystal and band structures. However, the thermoelectric performance has reached a bottleneck because of its inferior electronic structure and high lattice thermal conductivity. This work focuses on optimizing the electron–phonon transport by the synergistic effect of Ti and Cu 2 S in n -type PbS. The first-principles calculation, single Kane band model, and Debye model reveal the physical origin of thermoelectric enhancement. The Ti doping introduces a donor-defect state, leading to a high electrical conductivity and a suppression of bipolar diffusion. However, the band structure of PbS is not ideally optimized due to the localization effect of the Ti resonant impurity states. Furthermore, the co-added Cu 2 S induces additional point defects, multiscale secondary phases, and Cu-rich precipitates at grain boundaries, which significantly scatter phonons in a wide frequency range and reduce the lattice thermal conductivity. As a result, the maximum zT of ∼0.8 at 823 K and the average zT ave of ∼0.46 from 300 to 623 K are achieved in n -type Pb 0.99 Ti 0.01 S–2%Cu 2 S, demonstrating the important roles of Ti and Cu 2 S on improving thermoelectrics in n -type PbS.

physics, applied
Heterogeneous Cu Doping Facilitates Excellent Thermoelectric and Mechanical Performance in n-Type SnSe Composites

Ze Li,Wen-Jie Li,Jun Guo,Zi-Yuan Wang,Xing Yang,Yu-Ke Zhu,Tian-En Shi,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1021/acsami.4c17920

IF: 9.5

2024-12-11

ACS Applied Materials & Interfaces

Abstract:SnSe materials have attracted extensive attention in thermoelectrics due to their low thermal conductivity. Nevertheless, the thermoelectric properties of n-type polycrystalline SnSe are still low, and metallic Sn distributed in the SnSe(1-x) materials would affect the repeatability of thermoelectric performance. Herein, the thermoelectric properties of n-type polycrystalline SnSe(0.95)-based composites are highly enhanced by heterogeneous Cu doping. The carrier concentration of the SnSe(0.95)...

materials science, multidisciplinary,nanoscience & nanotechnology
Stepwise Optimization of Thermoelectric Performance in n‐Type SnS

Yixuan Hu,Shulin Bai,Yi Wen,Dongrui Liu,Tao Hong,Shan Liu,Shaoping Zhan,Tian Gao,Pengpeng Chen,Yichen Li,Lei Wang,Dezheng Gao,Xiang Gao,Qing Tan,Bingchao Qin,Li‐Dong Zhao

DOI: https://doi.org/10.1002/adfm.202414881

IF: 19

2024-10-28

Advanced Functional Materials

Abstract:This study presents a stepwise strategy, which includes aliovalent Br doping, isoelectronic Se alloying, and Sn vacancy compensation, realizes p–n transition, and effectively decouples electrical and thermal transports. Resultantly, the n‐type Sn1.04S0.55Se0.45 polycrystal achieves a maximum ZT of ≈0.7 at 823 K, the highest value among all reported n‐type SnS thermoelectrics. Tin sulfide (SnS) has been developed as an earth‐abundant and eco‐friendly compound that exhibits promising thermoelectric (TE) performance. While significant achievements are achieved in p‐type SnS, the development of its n‐type counterpart remains at a nascent stage, making it rather essential for developing n‐type SnS to ensure good compatibility in SnS‐based TE devices. In this study, Br is selected as the aliovalent dopant for realizing n‐type transport in SnS. Subsequently, isoelectronic Se alloying and vacancy compensation are utilized to further promote the TE performance for n‐type SnS. Se alloying can effectively narrow the bandgap of SnS for enhancing carrier concentration and diminishing thermal conductivity by strain and mass field fluctuations, while the excess Sn further compensates intrinsic Sn vacancies, thus optimizing carrier concentration and mobility simultaneously. These results are well verified by microstructure characterization and defect formation energy calculations. Consequently, the maximum ZT value of ≈0.7 and quality factor B of ≈1.02 at 823 K can be obtained after stepwise optimization, which is currently the highest value for n‐type SnS thermoelectrics. This study presents a significant progress for n‐type SnS and lays an important foundation for constructing all‐SnS‐based TE devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of N-Type SnTe.

Tao Hong,Bingchao Qin,Yongxin Qin,Shulin Bai,Ziyuan Wang,Qian Cao,Zhen-Hua Ge,Xiao Zhang,Xiang Gao,Li-Dong Zhao

DOI: https://doi.org/10.1021/jacs.4c01525

IF: 15

2024-01-01

Journal of the American Chemical Society

Abstract:The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of similar to 0.75 at 573 K with a high average ZT (ZT(ave)) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)(0.6)(Pb1.06Se)(0.4) sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of similar to 0.2 W and a conversion efficiency of similar to 2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.
Simultaneously optimized thermoelectric and mechanical performance of p-type polycrystalline SnSe enabled by CNTs addition

Xiaofang Liu,Hengyang Wang,Yao Chen,Bin Zhang,Hong Zhang,Sikang Zheng,Xianhua Chen,Xu Lu,Guoyu Wang,Xiaoyuan Zhou,Guang Han

DOI: https://doi.org/10.1016/j.scriptamat.2022.114846

IF: 6.302

2022-06-03

Scripta Materialia

Abstract:A series of SnSe/carbon nanotubes (SnSe/CNTs) composites, with homogeneous distribution of CNTs, were fabricated by combining solution synthesis with fast sintering. Enabled by CNTs addition, both the electrical conductivity and power factor are improved significantly; the lattice thermal conductivity is suppressed due to strengthened phonon scattering. As a result, a maximum zT of 0.90 is obtained in the SnSe/CNTs composite with 0.20 wt.% CNTs, ∼ 90% higher than that of SnSe. In addition, the composite with 0.35 wt.% CNTs exhibits a dramatically increased compressive strength of 135 MPa, representing an ∼ 81% increase. This work offers a composite design strategy for synergistically improving both thermoelectric and mechanical properties of polycrystalline SnSe.

materials science, multidisciplinary,nanoscience & nanotechnology,metallurgy & metallurgical engineering
Enhanced Thermoelectric Performance of P-Type SnSe Doped with Zn

J. C. Li,D. Li,X. Y. Qin,J. Zhang

DOI: https://doi.org/10.1016/j.scriptamat.2016.08.009

IF: 6.302

2017-01-01

Scripta Materialia

Abstract:In this study, we have synthesized SnSe doped with zinc (Zn) and investigated the effect of Zn doping on the thermoelectric properties of SnSe. The results demonstrate that a high thermoelectric figure of merit (ZT) of 0.96 at 873K is obtained for Zn0.01Sn0.99Se, which is 41% higher than that of pure SnSe (ZT=0.68). The value is the highest value reported for p-type polycrystalline doped SnSe materials, which arises from the increased power factor coming from a high electrical conductivity and an enhanced Seebeck coefficient.
Realizing High Thermoelectric Performance of Cu and Ce Co-Doped P-Type Polycrystalline SnSe Via Inducing Nanoprecipitation Arrays

Yi Qin,Tao Xiong,Jian-feng Zhu,Yan-ling Yang,Hong-rui Ren,Hai-long He,Chun-ping Niu,Xiao-han Li,Me-qian Xie,Ting Zhao

DOI: https://doi.org/10.1007/s40145-022-0639-6

IF: 11.534

2022-01-01

Journal of Advanced Ceramics

Abstract:Thermoelectric (TE) performance of polycrystalline stannous selenide (SnSe) has been remarkably promoted by the strategies of energy band, defect engineering, etc. However, due to the intrinsic insufficiencies of phonon scattering and carrier concentration, it is hard to simultaneously realize the regulations of electrical and thermal transport properties by one simple approach. Herein, we develop Cu and Ce co-doping strategy that can not only greatly reduce lattice thermal conductivity but also improve the electrical transport properties. In this strategy, the incorporated Cu and Ce atoms could induce high-density SnSe2 nanoprecipitation arrays on the surface of SnSe microplate, and produce dopant atom point defects and dislocations in its interior, which form multi-scale phonon scattering synergy, thereby presenting an ultralow thermal conductivity of 0.275 W·m-1·K-1 at 786 K. Meanwhile, density functional theory (DFT) calculations, carrier concentration, and mobility testing reveal that more extra hole carriers and lower conducting carrier scattering generate after Cu and Ce co-doping, thereby improving the electrical conductivity. The co-doped Sn0.98Cu0.01Ce0.01Se bulk exhibits an excellent ZT value up to 1.2 at 786 K and a high average ZT value of 0.67 from 300 to 786 K. This work provides a simple and convenient strategy of enhancing the TE performance of polycrystalline SnSe.
Synergistically optimizing interdependent thermoelectric parameters of n-type PbSe through alloying CdSe

Xin Qian,Haijun Wu,Dongyang Wang,Yang Zhang,Jinfeng Wang,Guangtao Wang,Lei Zheng,Stephen J. Pennycook,Li-Dong Zhao

DOI: https://doi.org/10.1039/c8ee03386b

IF: 32.5

2019-01-01

Energy & Environmental Science

Abstract:PbSe is an alternative of the well-known moderate-temperature thermoelectric material PbTe, and has attracted much attention because of its advantages of high earth-abundance and low price of Se compared with Te. To enhance the thermoelectric performance of PbSe, its several shortcomings should be overcome, such as poor electrical conductivity, small Seebeck coefficient and bipolar thermal conductivity. Simultaneously improving these properties is a big challenge in the thermoelectric community. In this work, we successfully addressed these problems with PbSe by introducing just one component, CdSe, which has a similar crystal structure and larger band gap compared to PbSe. The introduction of CdSe realizes four positive effects: (1) improving the effective mass through flattening the conduction band; (2) decreasing the lattice thermal conductivity enormously by introducing hierarchical sub-nano defects; (3) keeping a high carrier mobility due to the nanostructure-free matrix; (4) suppressing the bipolar thermal conductivity via enlarging the band gap of PbSe. Due to all the above synergistically optimized electrical and thermal transport properties, a superior ZT value of B1.4 and ZTave of B0.7 are achieved in n-type PbSe through CdSe alloying, and the calculated conversion efficiency can reach 10.5%. Our results indicate that PbSe is a robust candidate for medium-temperature thermoelectric applications.
Enhanced thermoelectric performance of AgCuTe-doped polycrystalline SnSe by lattice plainification

Wang Yajing,Chao Wang,Wang Xinxin,Shengqiang Cui,Min Hao,Chunhui Wang,Xudong Huang,Gui Yang

DOI: https://doi.org/10.1088/1361-6463/ad76be

2024-09-05

Journal of Physics D Applied Physics

Abstract:Polycrystalline SnSe, renowned for its environmental sustainability, holds promise as a significant thermoelectric material, attracting considerable research attention. This study focuses on the thermoelectric properties of p-type polycrystalline SnSe doped with silver copper telluride (AgCuTe). Our experimental results conclusively show that the decomposition products of AgCuTe not only fill Sn vacancies but also act as acceptors, thereby introducing additional hole carriers. This leads to a notable improvement in both carrier mobility and concentration. Importantly, the thermal conductivity of the doped samples remains largely unchanged, as the lattice flattening strategy significantly boosts electrical performance without affecting lattice thermal conductivity. Ultimately, the doped sample Sn0.97Se-0.5%AgCuTe resulted in a power factor of 6.2 mW/mK and a peak ZT value of 1.4 at 798 K, representing a 109% improvement in ZT value. All samples exhibits superior stability and reproducibility, emphasizing its reliability for practical applications.

physics, applied
Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels

Manman Yang,Jin Jia,Haijun Yu,Yimin Li,Lu Han,Hairui Sun,Haowen Jia,Yuanyuan Zhu

DOI: https://doi.org/10.3390/molecules29204974

IF: 4.6

2024-10-22

Molecules

Abstract:SnTe has emerged as a non-toxic and environmentally friendly alternative to the high-performance thermoelectric material PbTe, attracting significant interest in sustainable energy applications. In our previous work, we successfully synthesized high-quality SnTe with reduced thermal conductivity under high-pressure conditions. Building on this, in this work, we introduced indium (In) doping to further decrease thermal conductivity under high pressure. By incorporating resonance doping into the SnTe matrix, we aimed to enhance the electrical transport properties while maintaining low thermal conductivity. This approach enhances the Seebeck coefficient to an impressive 153 μVK−1 at 735 K, marking a notable enhancement compared to undoped SnTe. Furthermore, we noted a substantial decrease in total thermal conductivity, dropping from 6.91 to 3.88 Wm−1K−1 at 325 K, primarily due to the reduction in electrical conductivity. The synergistic impact of decreased thermal conductivity and heightened Seebeck coefficient resulted in a notable improvement in the thermoelectric figure of merit (ZT) and average ZT, achieving approximately 0.5 and 0.22 in the doped samples, respectively. These advancements establish Sn1−xInxTe as a promising candidate to replace PbTe in thermoelectric applications, providing a safer and more environmentally sustainable option.

chemistry, multidisciplinary,biochemistry & molecular biology
Improving the thermoelectric performance of p-type PbSe via synergistically enhancing the Seebeck coefficient and reducing electronic thermal conductivity

Zhiwei Huang,Dongyang Wang,Caiyun Li,Jinfeng Wang,Guangtao Wang,Li-Dong Zhao

DOI: https://doi.org/10.1039/c9ta13927c

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:CdTe alloying dramatically enhanced the thermoelectric performance of p-type PbSe by enhancing Seebeck coefficients and reducing electronic thermal conductivity.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Optimization of thermoelectric efficiency in SnTe: the case for the light band

Min Zhou,Zachary M. Gibbs,Heng Wang,Yemao Han,Caini Xin,Laifeng Li,G. Jeffrey Snyder

DOI: https://doi.org/10.1039/c4cp02091j

2014-01-01

Phys. Chem. Chem. Phys.

Abstract:Enhanced thermoelectric properties of SnTe are obtained by counter-doping with iodine as predicted using a two-valence-band model.

Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Enhanced thermoelectric performance of n -type PbTe bulk materials fabricated by semisolid powder processing

Enhanced Thermoelectric Performance in N-Type Polycrystalline SnSe by PbBr2 Doping

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Enhanced Thermoelectric Performance in Li Doped SnS Via Carrier Concentration Optimization

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering

Enhanced Thermoelectric Performance of Cu2SnSe3 by Synergic Effects Via Cobalt-Doping

Thermoelectric enhancement for n-type PbS via synergistic effect of Ti doping and Cu2S compositing

Heterogeneous Cu Doping Facilitates Excellent Thermoelectric and Mechanical Performance in n-Type SnSe Composites

Stepwise Optimization of Thermoelectric Performance in n‐Type SnS

All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of N-Type SnTe.

Simultaneously optimized thermoelectric and mechanical performance of p-type polycrystalline SnSe enabled by CNTs addition

Enhanced Thermoelectric Performance of P-Type SnSe Doped with Zn

Realizing High Thermoelectric Performance of Cu and Ce Co-Doped P-Type Polycrystalline SnSe Via Inducing Nanoprecipitation Arrays

Synergistically optimizing interdependent thermoelectric parameters of n-type PbSe through alloying CdSe

Enhanced thermoelectric performance of AgCuTe-doped polycrystalline SnSe by lattice plainification

Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels

Improving the thermoelectric performance of p-type PbSe via synergistically enhancing the Seebeck coefficient and reducing electronic thermal conductivity

Optimization of thermoelectric efficiency in SnTe: the case for the light band