Optimization of thermoelectric efficiency in SnTe: the case for the light band

Min Zhou,Zachary M. Gibbs,Heng Wang,Yemao Han,Caini Xin,Laifeng Li,G. Jeffrey Snyder

DOI: https://doi.org/10.1039/c4cp02091j

2014-01-01

Phys. Chem. Chem. Phys.

Abstract:Enhanced thermoelectric properties of SnTe are obtained by counter-doping with iodine as predicted using a two-valence-band model.

What problem does this paper attempt to address?

Optimizing the thermoelectric performance of In-Cd codoped SnTe by introducing Sn vacancies

Xiaofang Tan,Xiaojian Tan,Guoqiang Liu,Jingtao Xu,Hezhu Shao,Haoyang Hu,Min Jin,Haochuan Jiang,Jun Jiang

DOI: https://doi.org/10.1039/c7tc02162c

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:SnTe has been known as a unique thermoelectric material to achieve the synergy of a resonant level and band convergence, originating from its characteristic band structure. In this work, we report an optimization of the two kinds of band engineering in In-Cd codoped SnTe. Owing to the complementary and competitive effects of the resonant level and band convergence, the location of the Fermi level is critical to the optimization. We show that the highest power factor and thermoelectric figure of merit ZT are reached by introducing Sn vacancies, rather than reducing Sn vacancies as normally done in SnTe. The peak ZT similar to 1.1 appears at 850 K, while an overall enhanced ZT(ave) of 0.54 between 300 and 850 K and an estimated conversion efficiency of 9% are obtained. This study discloses the non-trivial interplay between the resonant level and band convergence.
Manipulating Band Convergence and Resonant State in Thermoelectric Material SnTe by Mn–In Codoping

Ling Wang,Xiaojian Tan,Guoqiang Liu,Jingtao Xu,Hezhu Shao,Bo Yu,Haochuan Jiang,Song Yue,Jun Jiang

DOI: https://doi.org/10.1021/acsenergylett.7b00285

IF: 22

2017-01-01

ACS Energy Letters

Abstract:We report an enhanced thermoelectric performance by manipulating band engineering in Mn-In codoped SnTe. It has been revealed that SnTe is a unique example achieving the synergy of band convergence and resonant state. According to band theory, band convergence favors heavy doping, while resonant state favors light doping. Following this idea, a series of Mn-In codoped SnTe samples are prepared by hot pressing. A significantly enhanced Seebeck coefficient of 116 mu V K-1 at 300 K is observed in Sn0.915Mn0.11 In0.005Te. By carefully tuning the band structure of the solid solution, we achieve a high ZT(max) of 1.15 at 823 K and an overall enhanced ZT(ave) of 0.62. The improved thermoelectric performance in a large temperature range leads to a competitive conversion efficiency of 10.1% with T-c = 300 K and T-h = 850 K, suggesting Mn-In codoped SnTe is a promising candidate for medium-temperature thermoelectric applications.
Refined band structure plus enhanced phonon scattering realizes thermoelectric performance optimization in CuI–Mn codoped SnTe

Gang Wu,Zhe Guo,Qiang Zhang,Xuemei Wang,Lidong Chen,Xiaojian Tan,Peng Sun,Guo-Qiang Liu,Bo Yu,Jun Jiang

DOI: https://doi.org/10.1039/d1ta03360c

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:CuI–Mn codoping promotes valence band convergence and enhances multiple defect-phonon scattering in SnTe, giving rise to significantly improved thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Strategy to Optimize the Overall Thermoelectric Properties of Snte Via Compositing with Its Property-Counter Cuinte2

Y. M. Zhou,H. J. Wu,Y. L. Pei,C. Chang,Y. Xiao,X. Zhang,S. K. Gong,J. Q. He,L. -D. Zhao

DOI: https://doi.org/10.1016/j.actamat.2016.11.049

IF: 9.4

2017-01-01

Acta Materialia

Abstract:SnTe, a lead-free analogue of PbTe, exhibits inferior thermoelectric performance due to its intrinsically high carrier concentration, and thus too low Seebeck coefficient and high thermal conductivity. To optimize the overall properties of SnTe, we composited SnTe with the other compound with opposite performance. CuInTe2 is a good choice due to its low carrier concentration, high Seebeck coefficient and relatively low thermal conductivity. As a result, the most optimized properties can be obtained in CuSnmInTem+2 when m = 7, and an enhanced figure of merit ZTcan be obtained, similar to 1.0 at 873 K, which is a three-fold increase for pure CuInTe2 and one-fold increase for pure SnTe. The overall properties are optimized much greater than the expectation, which was estimated through Effective Medium Theory (EMT). Such deviation can be ascribed to the existence of high density of coherent nanostructures. (C) 2016 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels

Manman Yang,Jin Jia,Haijun Yu,Yimin Li,Lu Han,Hairui Sun,Haowen Jia,Yuanyuan Zhu

DOI: https://doi.org/10.3390/molecules29204974

IF: 4.6

2024-10-22

Molecules

Abstract:SnTe has emerged as a non-toxic and environmentally friendly alternative to the high-performance thermoelectric material PbTe, attracting significant interest in sustainable energy applications. In our previous work, we successfully synthesized high-quality SnTe with reduced thermal conductivity under high-pressure conditions. Building on this, in this work, we introduced indium (In) doping to further decrease thermal conductivity under high pressure. By incorporating resonance doping into the SnTe matrix, we aimed to enhance the electrical transport properties while maintaining low thermal conductivity. This approach enhances the Seebeck coefficient to an impressive 153 μVK−1 at 735 K, marking a notable enhancement compared to undoped SnTe. Furthermore, we noted a substantial decrease in total thermal conductivity, dropping from 6.91 to 3.88 Wm−1K−1 at 325 K, primarily due to the reduction in electrical conductivity. The synergistic impact of decreased thermal conductivity and heightened Seebeck coefficient resulted in a notable improvement in the thermoelectric figure of merit (ZT) and average ZT, achieving approximately 0.5 and 0.22 in the doped samples, respectively. These advancements establish Sn1−xInxTe as a promising candidate to replace PbTe in thermoelectric applications, providing a safer and more environmentally sustainable option.

chemistry, multidisciplinary,biochemistry & molecular biology
Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

Fengkai Guo,Bo Cui,Yuan Liu,Xianfu Meng,Jian Cao,Yang Zhang,Ran He,Weishu Liu,Haijun Wu,Stephen J. Pennycook,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1002/smll.201802615

IF: 13.3

2018-01-01

Small

Abstract:SnTe is known as an eco-friendly analogue of PbTe without toxic elements. However, the application potentials of pure SnTe are limited because of its high hole carrier concentration derived from intrinsic Sn vacancies, which lead to a high electrical thermal conductivity and low Seebeck coefficient. In this study, Sn self-compensation and Mn alloying could significantly improve the Seebeck coefficients in the whole temperature range through simultaneous carrier concentration optimization and band engineering, thereby leading to a large improvement of the power factors. Combining precipitates and atomic-scale interstitials due to Mn alloying with dense dislocations induced by long time annealing, the lattice thermal conductivity is drastically reduced. As a result, an enhanced figure of merit (ZT) of 1.35 is achieved for the composition of Sn0.94 Mn0.09 Te at 873 K and the ZTave from 300 to 873 K is boosted to 0.78, which is of great significance for practical application. Hitherto, the ZTmax and ZTave of this work are the highest values among all single-element-doped SnTe systems.
Thermoelectric Properties of In-Hg Co-Doping in SnTe: Energy Band Engineering

Xiaofang Tan,Guoqiang Liu,Jingtao Xu,Xiaojian Tan,Hezhu Shao,Haoyang Hu,Haochuan Jiang,Yalin Lu,Jun Jiang

DOI: https://doi.org/10.1016/j.jmat.2017.12.001

IF: 8.589

2018-01-01

Journal of Materiomics

Abstract:Synergistic effect of band convergence and resonant level could be manipulated in SnTe by co-doping In and Hg, leading to a potential thermoelectric performance enhancement in a much wider temperature range. In this work we carefully investigated thermoelectric properties of the In-Hg co-doped SnTe, synthesized by a hot pressing method. With this co-doping the Seebeck coefficients of the co-doped samples were greatly improved (over 50 μVK−1) at the room temperature. Although power factors of the In-Hg co-doped SnTe were also able to be optimized, the peak ZT (0.9 at 850 K in Sn0.98Bi0.02Te-1%HgInTe2), however, is not high enough when comparing to other co-doped SnTe systems. This may be caused by the relatively high lattice thermal conductivity. An apparent competition between band convergence doping and resonant level doping was observed in our experiment. The results suggest that band engineering via co-doping should be further understood in order to optimize the thermoelectric properties inside the material system.
Valence band engineering and thermoelectric performance optimization in SnTe by Mn-alloying via a zone-melting method

jun he,xiaojian tan,guoqiang liu,hezhu shao,yajie fu,xue wang,zhu liu,jiaqiang xu,haochuan jiang,jun jiang

DOI: https://doi.org/10.1039/C5TA05535K

IF: 11.9

2015-01-01

Journal of Materials Chemistry A

Abstract:Tin telluride (SnTe) has recently attracted lots of interest due to its potential thermoelectric application as a lead-free rock-salt analogue of PbTe. However, pristine SnTe samples have high hole concentration due to the presence of intrinsic Sn vacancies, and shows a low Seebeck coefficient and high electrical thermal conductivity, resulting in poor thermoelectric performance. In this report, we show that zone-melted SnTe systems with additional Mn (1-7 mol%) can control the hole concentration by reducing the Sn vacancies, and modulate the electronic band structure by increasing the band gap and decreasing the energy separation between the light and heavy hole valence bands. Therefore, alloying with additional Mn enhances the contribution of the heavy hole valence band and significantly improves the Seebeck coefficient in SnMnxTe with the highest value of similar to 270 mu V K-1. A record power factor of 31.9 mu W cm(-1) K-2 has been obtained at 820 K. The maximum thermoelectric figure of merit ZT of similar to 1.25 is found at 920 K for the high quality crystalline ingot of p-type SnMn0.07Te.
Lead-free SnTe-based compounds as advanced thermoelectrics

Yu Zhang,Jinchang Sun,Jing Shuai,Xinfeng Tang,Gangjian Tan

DOI: https://doi.org/10.1016/j.mtphys.2021.100405

IF: 11.021

2021-07-01

Materials Today Physics

Abstract:Thermoelectric materials are able to realize the direct energy conversion between heat and electricity and have great potential in power generation and Peltier cooling. SnTe, an old but intriguing mid-temperature thermoelectric material, has attracted much attention in the past half-decade because of its non-toxic chemical elements as well as distinctive two-valence-bands (L and Σ bands) electronic structure. However, pristine SnTe shows inferior thermoelectric performance largely due to its intrinsically large population of holes as charge carriers, big energy difference between L and Σ bands and high lattice thermal conductivity. In recent years, numerous efforts have been carried out to optimize the transport coefficients of SnTe, endowing the peak thermoelectric figure of merit ZT above 1.8. In this review, the fundamental properties of SnTe are first outlined, and the optimization strategies are subsequently summarized for both electronic and phonon transport. Finally, future possible directions to further enhance the thermoelectric performance of SnTe are put forward at the end of this article. We believe that this review will spark people’s inspiration in exploring other IV-VI thermoelectric compounds.

materials science, multidisciplinary,physics, applied
Band and microstructure engineering toward high thermoelectric performance in SnTe

Jingli Xu,Zizhen Zhou,Kaiqi Zhang,Ting Zhao,Yiqing Wei,Bin Zhang,Honghui Wang,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/d4ta03729d

IF: 11.9

2024-01-01

Journal of Materials Chemistry A

Abstract:AgBiS 2 alloying combining with Ge doping facilitates the band convergence and suppresses the phonon transport, leading to a competitive zT of 1.6 in SnTe.

materials science, multidisciplinary,chemistry, physical,energy & fuels
High-Performance SnTe Thermoelectric Materials Enabled by the Synergy of Band Convergence and Phonon Scattering

Yi Yuan,Yaning Wang,Yonghui Ma,Ruiming Yang,Meiling Li,Tie Liu,Qiang Wang

DOI: https://doi.org/10.1021/acsami.4c10744

IF: 9.5

2024-08-22

ACS Applied Materials & Interfaces

Abstract:SnTe, an environmentally friendly thermoelectric material, has garnered widespread scholarly interest owing to its lead-free nature; however, its intrinsic thermoelectric performance is constrained by a relatively low Seebeck coefficient and an extremely high lattice thermal conductivity. In this investigation, we employ the alloying of Ge and AgSbTe(2) to enhance the zT value of SnTe. The study found that Ge, Ag, and Sb can effectively enhance the Seebeck coefficient and power factor of SnTe by...

materials science, multidisciplinary,nanoscience & nanotechnology
High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach

Gangjian Tan,Li-Dong Zhao,Fengyuan Shi,Jeff W Doak,Shih-Han Lo,Hui Sun,Chris Wolverton,Vinayak P Dravid,Ctirad Uher,Mercouri G Kanatzidis

DOI: https://doi.org/10.1021/ja500860m

2014-05-14

Abstract:SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd(0.03)Te exhibit ZT values of ~0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd(0.03)Te with no effect on the power factor. We report that SnCd(0.03)Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ~1.3 and ~1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation.
Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Jing Tang,Bo Gao,Siqi Lin,Juan Li,Zhiwei Chen,Fen Xiong,Wen Li,Yue Chen,Yanzhong Pei

DOI: https://doi.org/10.1002/adfm.201803586

IF: 19

2018-06-27

Advanced Functional Materials

Abstract:Many efforts are recently devoted on improving thermoelectric SnTe as an environment—friendly alternative to conventional PbTe and successful approaches include valence band convergence, nanostructuring, and substantial/interstitial defects. Among these strategies, alloying SnTe with MnTe enables the most effective reduction in the valence band offset (between L and Σ) for a convergence due to its high solubility of ≈15%, yet there is no indication that the solubility of MnTe is high enough for fully optimizing the valence band structure and thus for maximizing the electronic performance. Here, a strategy is shown to increase the MnTe solubility up to ≈25% by alloying with 5% GeTe, which successfully locates the composition (20% MnTe) to optimize the valence band structure by converging a more degenerated Λ (as compared with band L) and Σ valence bands. Through a further alloying with Cu2Te, the resultant Cu‐interstitial defects enable a sufficient reduction in lattice thermal conductivity to its amorphous limit (0.4 W m−1 K−1). These electronic and thermal effects successfully realize a record‐high thermoelectric figure of merit, zT of 1.8, strongly competing with that of PbTe. This work demonstrates the validity of band manipulation and interstitial defects for realizing extraordinary thermoelectric performance in SnTe. GeTe is found to be an effective promoter for increasing the solubility of MnTe in SnTe, which leads to well‐converged valence bands for improving the thermoelectric performance. A further Cu2Te‐alloying reduces the lattice thermal conductivity to its amorphous limit and the combination of both electronic and thermal strategies realizes a record zT of 1.8 in SnTe.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Band and Vacancy Engineering in SnTe to Improve its Thermoelectric Performance

Zan Yang,Evan Smith,Yu-Chih Tseng,Kamil M Ciesielski,Sergei Novikov,Thomas Kalab,Yuang Huang,Eric Toberer,Yurij Mozharivskyj

DOI: https://doi.org/10.1039/d3ta07585k

IF: 11.9

2024-01-30

Journal of Materials Chemistry A

Abstract:SnTe is a promising thermoelectric material with low cost and high stability. However, its performance is limited by the large energy separation between the light hole L band and the lower heavy hole Σ band. Despite the efforts being made to induce band convergence, the improvements are very limited. In this work, the band flattening was first induced by Sb 2 Te 3 alloying, which increases the density of states effective mass of the L band by 278%. The carrier mobility and lattice thermal conductivity were subsequently optimized through vacancy defect manipulation via Pb compensation. Eventually, a peak zT of 1.1 at 778K and an average zT of 0.56 from 300K to 778K is achieved in (Sn 0.98 Ge 0.05 Te) 0.91 (Sb 2 Pb 0.5 Te 3 ) 0.09 , which is one of the best SnTe-based thermoelectric systems.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Fu Li,Wenting Wang,Xincheng Qiu,Zhuanghao Zheng,Ping Fan,Jingting Luo,Bo Li

DOI: https://doi.org/10.1039/c7qi00436b

IF: 7.779

2017-01-01

Inorganic Chemistry Frontiers

Abstract:Improved electrical conductivity together with reduced lattice thermal conductivity is achieved for n-type cation-site Ti, Pb co-doped SnSe, resulting in an optimized thermoelectric property.
Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Yu Zhang,Jun Li,Weiwei Hu,Xinru Yang,Xinfeng Tang,Gangjian Tan

DOI: https://doi.org/10.1016/j.mtener.2022.100958

IF: 9.257

2022-04-01

Materials Today Energy

Abstract:SnTe-based compounds have attracted increasing attention in recent years as lead-free thermoelectric materials. However, the thermoelectric performance of pristine SnTe is poor because of its overhigh lattice thermal conductivity and low Seebeck coefficient. In this study, we demonstrate that SnSe alloying considerably frustrates heat conduction in SnTe while preserving high charge carrier mobilities, by taking GeTe alloying as a comparative study. Based on these findings, we proceed to substitute Sn atoms by Cd in SnTe–SnSe alloys. This proves to be an efficient way of converging the two valence bands of SnTe, leading to remarkably improved Seebeck coefficients with the highest value approaching 200 μV/K at elevated temperatures. Consequently, the thermoelectric dimensionless figure of merit ZT reaches ∼0.9 at 873 K for the sample with nominal composition of Sn0.96Cd0.04Te0.88Se0.12, which is over 60% improvement over pristine SnTe. Our work highlights the importance of selective alloying and band tuning in engineering bulk thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

Zhao Li-Dong,Zhang Xiao,Wu Haijun,Tan Gangjian,Pei Yanling,Xiao Yu,Chang Cheng,Wu Di,Chi Hang,Zheng Lei,Gong Shengkai,Uher Ctirad,He Jiaqing,Kanatzidis Mercouri G.

DOI: https://doi.org/10.1021/jacs.5b13276

IF: 15

2016-01-01

Journal of the American Chemical Society

Abstract:We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing < 0.2 the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of mu W cm(-1) K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03.Te.. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from similar to 2.0 Wm(-1) K-1 for Sn0.97Bi0.03Te to X1.2 Wm(-1) as the SrTe content is increased from 0 to 5.0% at room temperature and from similar to 1.1 to -,0.70 Wm-1 IC' at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium temperature thermoelectric applications.
Synergistic band modulation and precipitates: Achieving high quality factor in SnTe

Shan He,Fujie Zhang,Ruiheng Li,Lin Gan,Xiaobo Tan,Jianglong Zhu,Ran Ang

DOI: https://doi.org/10.1063/5.0131715

IF: 4

2023-02-17

Applied Physics Letters

Abstract:Breaking the thermoelectric figure of merit zT barrier of SnTe enables it to become a promising alternative to PbTe; however, the inferior and strongly coupled physicochemical properties of pristine SnTe severely restrict the efficient optimization. Herein, we doped trivalent Sb in SnTe and incorporated SnS particles to achieve high quality factor B through a two-step optimization strategy of tuning the valence band structure and intercalating heterostructural precipitates, and well predicted the potential prospects. The high solubility limit of Sb not only reduced the carrier concentration n H but also significantly optimized the valence band structure and improved the Seebeck coefficient, thereby enhancing the weight mobility μ w in the all-temperature region. Furthermore, the additional SnS, which tends to exist as precipitates with different micrometer-scale sizes, enhanced low-medium-frequency phonon scattering in a wider frequency range except for point defects scattering, suppressing the lattice thermal conductivity to 0.55 W m −1 K −1 . As a result of this synergistic effect, a high B -factor of ∼0.82 greater than triple pure SnTe was obtained in Sn 0.91 Sb 0.09 Te-10%SnS, with an enhanced zT of ∼1.15 at 850 K. More importantly, the high B -factor accurately predicted an excellent zT value of ∼1.65 at the optimal Fermi level, which highlights the great potential of Sn 1- x Sb x Te- y %SnS-based materials. This work provides an effective route for stepwise optimization of electrical and thermal performance from the B -factor perspective and has guiding significance for other thermoelectric materials.

physics, applied
Outstanding thermoelectric properties of solvothermal-synthesized Sn1-3xInxAg2xTe micro-crystals through defect engineering and band tuning

Raza Moshwan,Wei-Di Liu,Xiao-Lei Shi,Qiang Sun,Han Gao,Yun-Peng Wang,Jin Zou,Zhi-Gang Chen

DOI: https://doi.org/10.1039/c9ta11614a

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:Due to the eco-friendly nature, tin telluride (SnTe) based thermoelectric materials have attracted extensive attention. Pristine SnTe suffers from low thermoelectric performance because of its large energy separation between two valence bands (heavy hole and light hole) and high thermal conductivity. In this study, we use In and Ag co-dopants to ameliorate the electrical and thermal transport properties of SnTe-based materials using a facile solvothermal method. From the theoretical calculation and performance evaluation, it can be observed that high-level In and Ag co-dopants can significantly converge two valence bands and increase the density of states near the Fermi level, leading to the enhanced Seebeck coefficient from similar to 95 mu V K-1 in the pristine SnTe to similar to 178 mu V K-1 in the Sn0.85In0.05Ag0.10Te. Comprehensive structural characterization shows that high-density strain fields and dislocations exist in the sintered pellets, together with the point defects, and grain boundaries secured the remarkably low lattice thermal conductivity of SnTe in the entire temperature range. As a result, a high peak figure of merit of similar to 1.38 at 823 K has been achieved in Sn0.85In0.05Ag0.10Te, outperforming most of the SnTe-based materials. This study indicates that co-doping with high solubility can simultaneously tune the band structure and engineer defects for achieving enhanced thermoelectric performance of SnTe-based materials.
Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe

Wenjing Xu,Zhongwei Zhang,Chengyan Liu,Jie Gao,Zhenyuan Ye,Chunguang Chen,Ying Peng,Xiaobo Bai,Lei Miao

DOI: https://doi.org/10.1007/s40145-021-0480-3

IF: 11.534

2021-04-24

Journal of Advanced Ceramics

Abstract:Abstract Eco-friendly SnTe based thermoelectric materials are intensively studied recently as candidates to replace PbTe; yet the thermoelectric performance of SnTe is suppressed by its intrinsically high carrier concentration and high thermal conductivity. In this work, we confirm that the Ag and La co-doping can be applied to simultaneously enhance the power factor and reduce the thermal conductivity, contributing to a final promotion of figure of merit. On one hand, the carrier concentration and band offset between valence bands are concurrently reduced, promoting the power factor to a highest value of ∼2436 μW·m −1 ·K −2 at 873 K. On the other hand, lots of dislocations (∼3.16×10 7 mm −2 ) associated with impurity precipitates are generated, resulting in the decline of thermal conductivity to a minimum value of 1.87 W·m −1 ·K −1 at 873 K. As a result, a substantial thermoelectric performance enhancement up to zT ≈ 1.0 at 873 K is obtained for the sample Sn 0.94 Ag 0.09 La 0.05 Te, which is twice that of the pristine SnTe ( zT ≈ 0.49 at 873 K). This strategy of synergistic manipulation of electronic band and microstructures via introducing rare earth elements could be applied to other systems to improve thermoelectric performance.

materials science, ceramics

Optimization of thermoelectric efficiency in SnTe: the case for the light band

Optimizing the thermoelectric performance of In-Cd codoped SnTe by introducing Sn vacancies

Manipulating Band Convergence and Resonant State in Thermoelectric Material SnTe by Mn–In Codoping

Refined band structure plus enhanced phonon scattering realizes thermoelectric performance optimization in CuI–Mn codoped SnTe

Strategy to Optimize the Overall Thermoelectric Properties of Snte Via Compositing with Its Property-Counter Cuinte2

Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels

Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

Thermoelectric Properties of In-Hg Co-Doping in SnTe: Energy Band Engineering

Valence band engineering and thermoelectric performance optimization in SnTe by Mn-alloying via a zone-melting method

Lead-free SnTe-based compounds as advanced thermoelectrics

Band and microstructure engineering toward high thermoelectric performance in SnTe

High-Performance SnTe Thermoelectric Materials Enabled by the Synergy of Band Convergence and Phonon Scattering

High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Band and Vacancy Engineering in SnTe to Improve its Thermoelectric Performance

Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

Synergistic band modulation and precipitates: Achieving high quality factor in SnTe

Outstanding thermoelectric properties of solvothermal-synthesized Sn<sub>1-3<i>x</i></sub>In<sub><i>x</i></sub>Ag<sub>2<i>x</i></sub>Te micro-crystals through defect engineering and band tuning

Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe