Optimizing The Thermoelectric Performance Of Low-Temperature Snse Compounds By Electronic Structure Design

a j hong,leishi li,h x zhu,z b yan,j m liu,z f ren
DOI: https://doi.org/10.1039/c5ta01703c
IF: 11.9
2015-01-01
Journal of Materials Chemistry A
Abstract:Recently, the SnSe compound was reported to have a peak thermoelectric figure-of-merit (ZT) of similar to 2.62 at 923 K, but the ZT values at temperatures below 750 K are relatively low. In this work, the electronic structures of SnSe are calculated using the density functional theory, and the electro- and thermo-transport properties upon carrier density are evaluated by the semi-classic Boltzmann transport theory, revealing that the calculated ZT values along the a- and c-axes below 675 K are in agreement with reported values, but that along the b-axis can be as high as 2.57 by optimizing the carrier concentration to n similar to 3.6 x 10(19) cm(-3). It is suggested that a mixed ionic-covalent bonding and heavy-light band overlapping near the valence band are the reasons for the higher thermoelectric performance.
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