Enhanced Thermoelectric Performance in N-Type Polycrystalline SnSe by PbBr2 Doping

Debo Li,Xiaojian Tan,Jingtao Xu,Guoqiang Liu,Min Jin,Hezhu Shao,HuaJie Huang,Jianfeng Zhang,Jun Jiang

DOI: https://doi.org/10.1039/c6ra28332b

IF: 4.036

2017-01-01

RSC Advances

Abstract:By increasing the carrier concentration and the DOS effective mass, a ZT of 0.54 was achieved at 793 K.

What problem does this paper attempt to address?

Enhanced thermoelectric performance of n -type PbTe bulk materials fabricated by semisolid powder processing

deqing mei,yang li,zhehe yao,hui wang,tiejun zhu,shaochen chen

DOI: https://doi.org/10.1016/j.jallcom.2014.04.116

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:The introduction of mesoscale (∼0.1–1.0μm) structures is one of effective approaches to reduce the thermal conductivity of thermoelectric materials. In this study, n-type PbTe bulk samples were fabricated by semisolid powder processing (SPP) using powders synthesized by melting. The field emission scanning electron microscope (FESEM) results showed that there were circular mesoscale pores in the grains of the samples fabricated by SPP. The mesoscale pores effectively reduced the lattice thermal conductivity by enhancing the scattering of phonons with long mean free paths. The samples fabricated by SPP had a figure of merit (ZT) value of 1.33 at 773K, which showed an enhancement of 77% compared with that of their hot-pressed counterparts. This enhancement mainly resulted from the lower lattice thermal conductivity and higher power factor of the SPP samples.
Raising thermoelectric performance of n-type SnSe: Via Br doping and Pb alloying

Chang Cheng,Tan Qing,Pei Yanling,Xiao Yu,Zhang Xiao,Chen Yue-Xing,Zheng Lei,Gong Shengkai,Li Jing-Feng,He Jiaqing,Zhao Li-Dong

DOI: https://doi.org/10.1039/c6ra21884a

2016-01-01

RSC Adv.

Abstract:High ZT value of _1.2 at 773 K was achieved in n-type polycrystalline SnSe. The high thermoelectric performance derives from the low thermal conductivity of SnSe and enhanced electrical conductivity induced by Br doping and Pb alloying. © The Royal Society of Chemistry 2016.
Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Dezheng Gao,Yi Wen,Shulin Bai,Siqi Wang,Shibo Liu,Yichen Li,Lei Wang,Wujing Zang,Xianli Su,Xiang Gao,Hongyao Xie,Li‐Dong Zhao

DOI: https://doi.org/10.1002/smll.202407556

IF: 13.3

2024-10-01

Small

Abstract:This article shows that Sn can effectively fill intrinsic Pb vacancies in PbSe, significantly enhancing the mobility of the material. The dynamic doping of Cu effectively improves the electrical transport properties over a wide temperature range, and also valid to suppress the lattice thermal conductivity. The resulting PbSn0.004Se+3‰Cu obtained a maximum ZT of ≈1.7 at 800 K. Ideal thermoelectrics shall possess a high average ZT, which relies on high carrier mobility and appropriate carrier density at operating temperature. However, conventional doping usually results in a temperature‐independent carrier concentration, making performance optimization over a wide temperature range be challenging. This work demonstrates the combination of lattice plainification and dynamic doping strategies is an effective route to boost the average ZT of N‐type PbSe. Because Sn and Pb have similar ionic radii and electronegativity, this allows Sn to fill the intrinsic Pb vacancies and effectively improves the carrier mobility of PbSe to 1300 cm2 V−1 s−1. Furthermore, a trace amount of Cu is introduced into the Sn‐filled PbSe to optimize the carrier concentration. The extra Cu is situated in the interstitial sides of the lattice, which undergoes a dissolution‐precipitation process with temperature, leading to a strongly temperature‐dependent carrier density in the material. This dynamic doping effectively improves the electrical transport properties and is also valid to suppress the lattice thermal conductivity. Ultimately, the resulting PbSn0.004Se+3‰Cu obtains a maximum ZT of ≈1.7 at 800 K and an average ZT of ≈1.0, with a 7.7% power generation efficiency in a single‐arm device, showing significant potential for commercial application.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enhanced thermoelectric performance of n-type polycrystalline SnSe via NdCl3 doping

Shun Zhang,Can Zhu,Xiong He,Jian Wang,Feng Luo,Jiafu Wang,Hongxia Liu,Zhigang Sun

DOI: https://doi.org/10.1016/j.jallcom.2022.164900

IF: 6.2

2022-07-01

Journal of Alloys and Compounds

Abstract:A series of n-type polycrystalline SnSe0.95 - xmol% NdCl3 samples were synthesized using the melting method combined with spark plasma sintering (SPS). Doping NdCl3 significantly improves the electrical conductivity and suppresses the deterioration of the Seebeck coefficient after thermal excitation, which leads to significantly higher power factors than SnSe0.95. In addition, excessive doping of NdCl3 not only introduces a large number of point defects but also produces NdCl3 precipitates, which largely enhances the phonon scattering and significantly reduces the thermal conductivity. As a result, a maximum ZT value of 1.3 at 773 K has been obtained in SnSe0.95 - 1.5 mol% NdCl3 sample, indicating that the doping of rare earth halides can effectively enhance the thermoelectric performance of n-type SnSe0.95 by simultaneously improving the power factor and reducing the lattice thermal conductivity.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation

Lizhong Su,Tao Hong,Dongyang Wang,Sining Wang,Bingchao Qin,Mengmeng Zhang,Xiang Gao,Cheng Chang,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtphys.2021.100452

IF: 11.021

2021-09-01

Materials Today Physics

Abstract:SnSe, a wide-bandgap semiconductor, has attracted significant attention from the thermoelectric (TE) community due to its outstanding TE performance deriving from the ultralow thermal conductivity and advantageous electronic structures. Here, we promoted the TE performance of n-type SnSe polycrystals through bandgap engineering and vacancy compensation. We found that PbTe can significantly reduce the wide bandgap of SnSe to reduce the impurity transition energy, largely enhancing the carrier concentration. Also, PbTe-induced crystal symmetry promotion increases the carrier mobility, preserving large Seebeck coefficient. Consequently, a maximum ZT of ∼1.4 at 793 K is obtained in Br doped SnSe–13%PbTe. Furthermore, we found that extra Sn in n-type SnSe can compensate for the intrinsic Sn vacancies and form electron donor-like metallic Sn nanophases. The Sn nanophases near the grain boundary could also reduce the intergrain energy barrier which largely enhances the carrier mobility. As a result, a maximum ZT value of ∼1.7 at 793 K and an average ZT (ZT ave) of ∼0.58 in 300–793 K are achieved in Br doped Sn1.08Se–13%PbTe. Our findings provide a novel strategy to promote the TE performance in wide-bandgap semiconductors.

materials science, multidisciplinary,physics, applied
Study on the Thermoelectric Properties of N-Type Polycrystalline SnSe by CeCl3 Doping

Hongxia Liu,Shun Zhang,Yan Zhang,Shuotong Zong,Wang Li,Can Zhu,Feng Luo,Jian Wang,Zhigang Sun

DOI: https://doi.org/10.1021/acsaem.2c02761

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:SnSe is a promising medium-temperature thermo-electric material due to its extremely low thermal conductivity and tunable electronic transport properties. In this work, n-type SnSe0.95 polycrystals doped with CeCl3 are synthesized by a melting method combined with a spark plasma sintering (SPS) process. The samples have highly textured structures and anisotropic thermoelectric properties. CeCl3 doping has a favorable effect on the electronic transport above 473 K, which may benefit from the excitation of the introduced impurity energy level. Moreover, the thermal conductivity is significantly reduced due to the phonon scattering by point defects. Finally, a peak ZT value of 1.17 is obtained at 773 K in SnSe0.95-0.5 mol % CeCl3, which paves the way for improving the thermoelectric performance of n-type SnSe via rare-earth halide doping.
Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Shaohai Wu,Hengquan Yang,Zhengsen Wu,Chengyan Liu,Lei Miao,Jie Gao,Xiaoyang Wang,Xiuxia Wang,Chengjin Shen,Jacques G. Noudem,Jun Wang

DOI: https://doi.org/10.1021/acsaem.9b01399

IF: 6.4

2019-01-01

ACS Applied Energy Materials

Abstract:Eco-friendly and low-cost layered SnSe2-based materials have been attracting great attention in the thermoelectric field for their intrinsically low thermal conductivity. In this work, we applied AgCl as Cl-dopant and formed Ag-rich precipitates in SnSe2 polycrystals, and their thermoelectric properties were investigated. The results demonstrate that Cl was artificially incorporated into SnSe2 by the substitution of Se atoms, playing as donor centers and thus increasing the carrier concentration by 2 orders of magnitude, leading to a tremendous improvement of the electrical conductivity and power factor. However, Ag atoms hardly enter into the Sn lattice sites and brought about the generation of Ag-rich precipitates. The complicated microstructures with multiple types of defects, such as point defects, boundaries, dislocations, and so on, result in a relatively low lattice thermal conductivity in the AgCl-introduced SnSe2 samples. Additionally, the anisotropic electrical and thermal transport properties were investigated, and the results show that higher ZT values were obtained along the pressing direction in these textured samples because of the significantly suppressed lattice thermal conductivity caused by the enhanced phonon scattering via the interior van der Waals layers. Ultimately, a maximum ZT value of 0.35 was realized at 400 degrees C in the polycrystalline SnSe2 with introduction of 11 mol % AgCl, which is nearly 3 times higher than that value of the pristine counterpart. It demonstrates that the combined effects of Cl-doping, Ag-rich precipitates, and texturing could effectively enhance the ZT value for polycrystalline SnSe2.
Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Wei Liu,Tao Hong,Shizhi Dong,Dongyang Wang,Xiang Gao,Yu Xiao,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtener.2022.100983

IF: 9.257

2022-06-01

Materials Today Energy

Abstract:PbTe is a promising thermoelectric material, but the properties in n-type PbTe need further improvement to match its advanced p-type material. In this work, the thermoelectric performance in n-type PbTe is synergistically enhanced with iodine (I) doping and SnSe alloying. The experiments show that I element is a good donor dopant to tune the carrier density and SnSe alloying can effectively balance the triple-relations between carrier mobility, carrier effective mass and lattice thermal conductivity. Thus, high carrier mobility of ∼ 755 cm2V-1s-1 results in an optimum power factor (PF) of ∼ 27.0 μWcm-1K-2 in PbTe-2%SnSe at 573 K. Microstructure observation reveals the dispersively embedded Sn-rich nanoprecipitates in PbTe-2%SnSe, which largely suppresses lattice thermal conductivity at room-temperature, from ∼ 3.41 Wm-1K-1 in PbTe to ∼ 1.01 Wm-1K-1 in PbTe-2%SnSe. Combined the optimized PF and decreased thermal conductivity, the peak ZT value of ∼ 1.5 can be obtained at 773 K in PbTe-2%SnSe. The obtained high thermoelectric performance in our work is comparable with other advanced n-type PbTe thermoelectrics and has great application potential.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Study on the Thermoelectric Properties of n-Type Polycrystalline SnSe by CeCl 3 Doping

Hongxia Liu,Shun Zhang,Yan Zhang,Shuotong Zong,Wang Li,Can Zhu,Feng Luo,Jian Wang,Zhigang Sun

DOI: https://doi.org/10.1021/acsaem.2c02761

IF: 6.4

2022-11-18

ACS Applied Energy Materials

Abstract:SnSe is a promising medium-temperature thermoelectric material due to its extremely low thermal conductivity and tunable electronic transport properties. In this work, n-type SnSe0.95 polycrystals doped with CeCl3 are synthesized by a melting method combined with a spark plasma sintering (SPS) process. The samples have highly textured structures and anisotropic thermoelectric properties. CeCl3 doping has a favorable effect on the electronic transport above 473 K, which may benefit from the excitation of the introduced impurity energy level. Moreover, the thermal conductivity is significantly reduced due to the phonon scattering by point defects. Finally, a peak ZT value of 1.17 is obtained at 773 K in SnSe0.95–0.5 mol % CeCl3, which paves the way for improving the thermoelectric performance of n-type SnSe via rare-earth halide doping.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Re‐Doped p‐Type Thermoelectric SnSe Polycrystals with Enhanced Power Factor and High ZT > 2

Bin Su,Zhanran Han,Yilin Jiang,Hua‐Lu Zhuang,Jincheng Yu,Jun Pei,Haihua Hu,Jing‐Wei Li,Yu‐Xiao He,Bo‐Ping Zhang,Jing‐Feng Li

DOI: https://doi.org/10.1002/adfm.202301971

IF: 19

2023-05-30

Advanced Functional Materials

Abstract:This study proposes a Na/Re co‐doping approach in order to maximize the carrier mobility at an optimal carrier concentration. In particular, the Er/Na co‐doping effect is observed to effectively decouple the relationship between S and σ, by modulating the band structure, thus significantly boosting the PF in both the parallel and perpendicular directions. Furthermore, the large lattice distortion induced by the substitutional Er ions results in massive nanoscale defects, which contribute to lower lattice thermal conductivity. As a result, a maximum ZT > 2.1 at 873 K and a high average ZT (0.77, 300–900 K) are obtained. Thermoelectric technology enables the direct interconversion between heat and electricity. SnSe has received increasing interest as a new promising thermoelectric compound due to its exceptionally high performance reported in crystals. SnSe possesses intrinsic low thermal conductivity as a congenital advantage for thermoelectric, but high thermoelectric performance can be hardly achieved due to the difficulty to realize efficient doping to raise its low carrier concentration to an optimal level. In this work, it is found that a series of rare earth elements are effective dopants for SnSe, which can greatly improve the electrical transport properties of p‐type polycrystalline SnSe. In particular, the remarkable enhancement in electrical conductivity and power factor is achieved by Na/Er co‐doping at 873 K. The lattice thermal conductivity is reduced due to the presence of abundant defects (dislocations, stacking faults, and twin boundaries). Consequently, a peak thermoelectric figure of merit ZT (2.1) as well as a high average ZT (0.77) are achieved in polycrystalline SnSe.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Realizing high-ranged thermoelectric performance in PbSnS2 crystals

Shaoping Zhan,Tao Hong,Bingchao Qin,Yingcai Zhu,Xiang Feng,Lizhong Su,Haonan Shi,Hao Liang,Qianfan Zhang,Xiang Gao,Zhen-Hua Ge,Lei Zheng,Dongyang Wang,Li-Dong Zhao

DOI: https://doi.org/10.1038/s41467-022-33684-0

IF: 16.6

2022-10-08

Nature Communications

Abstract:Abstract Great progress has been achieved in p-type SnS thermoelectric compound recently, while the stagnation of the n-type counterpart hinders the construction of thermoelectric devices. Herein, n-type sulfide PbSnS 2 with isostructural to SnS is obtained through Pb alloying and achieves a maximum ZT of ~1.2 and an average ZT of ~0.75 within 300–773 K, which originates from enhanced power factor and intrinsically ultralow thermal conductivity. Combining the optimized carrier concentration by Cl doping and enlarged Seebeck coefficient through activating multiple conduction bands evolutions with temperature, favorable power factors are maintained. Besides, the electron doping stabilizes the phase of PbSnS 2 and the complex-crystal-structure induced strong anharmonicity results in ultralow lattice thermal conductivity. Moreover, a maximum power generation efficiency of ~2.7% can be acquired in a single-leg device. Our study develops a n-type sulfide PbSnS 2 with high performance, which is a potential candidate to match the excellent p-type SnS.

multidisciplinary sciences
Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe

Tian-Ran Wei,Gangjian Tan,Chao-Feng Wu,Cheng Chang,Li-Dong Zhao,Jing-Feng Li,G. Jeffrey Snyder,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1063/1.4975603

IF: 4

2017-01-30

Applied Physics Letters

Abstract:Single-crystal SnSe has been found to exhibit exceptional thermoelectric performance, but the efficiency of polycrystalline samples is still far from satisfactory. In this work, with an intention to effectively suppress heat conduction and minimally affect hole transport, we alloyed p-type polycrystalline SnSe with PbSe. Single-phase Sn1−xPbxSe solid solutions were formed up to x ≈ 0.12. The lattice thermal conductivity was reduced from 1.4 to 0.85 W m−1 K−1 by 12 at. % PbSe alloying due to strain and mass fluctuations. Interestingly, the Seebeck coefficient and carrier concentration were nearly unchanged by Pb substitution, indicating a constant effective mass and an undisrupted valence band maximum. A peak figure of merit (ZT) of 0.85 at 800 K was obtained in the x = 0 sample, and relatively high performance was also achieved in solid solutions. A concise model was developed involving multiple carrier scattering mechanisms, capturing the dependence of the mobility on composition and temperature.

physics, applied
Enhanced mid-temperature thermoelectric performance of textured SnSe polycrystals made of solvothermally synthesized powders

Li Yiwen,Li Fu,Dong Jinfeng,Ge Zhenhua,Kang Feiyu,He Jiaqing,Du Hongda,Li Bo,Li Jing-Feng

DOI: https://doi.org/10.1039/c5tc04202j

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:This work revealed that the thermoelectric properties of textured SnSe polycrystals, which are made of solvothermally synthesized powders with a preferred orientation grown along the (400) plane, can be enhanced, especially in the range of mid-temperatures. The electrical conductivity for the sintered sample is greatly improved in the whole measured temperature range, attributed to the high carrier concentration and unique mobility change. This results in a large power factor combined with the moderate Seebeck coefficient, especially in the range of 300-650 K, which exceeds 5 mu W cm(-1) K-2 at 423 K and even larger than 6 mu W cm(-1) K-2 at 521 K. Benefiting from the enhanced electrical conductivity and the low total thermal conductivity (<1 W m(-1) K-1 in the range of 300 to 773 K), a higher ZT value than that reported for undoped single crystals was achieved in a relatively wide mid-temperature range, which reached 0.44 at 522 K and 0.5 at 573 K, and then showed weak temperature dependence in the range from 573 to 700 K. Above 700 K, the ZT value increased with temperature and a maximum value of nearly 0.6 was obtained at the maximum measured temperature of 773 K for the SnSe sample without any deliberate doping.
Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

Xinxin Wang,Chao Wang,Yajing Wang,Min Hao,Shengqiang Cui,Xudong Huang,Chunhui Wang,Jing Chen,Zhenxiang Cheng,Jianli Wang

DOI: https://doi.org/10.1002/smll.202403852

IF: 13.3

2024-07-26

Small

Abstract:A unique semi‐coherent phase interface, characterized by low lattice mismatch, ensures high carrier mobility while reducing the lattice thermal conductivity at low and medium temperatures of the matrix. Coupled with the dynamic doping effect of Cu, the electrical and thermal transport properties of the n‐type PbSe samples are comprehensively enhanced. N‐type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single‐band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n‐type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n‐type AgCuTe‐alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi‐coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi‐coherent phase interface effectively scatters low‐frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high‐temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n‐type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Realizing High Thermoelectric Performance in p-Type SnSe Crystals via Convergence of Multiple Electronic Valence Bands

Suniya Siddique,Yaru Gong,Ghulam Abbas,Manzar Mushaf Yaqoob,Shuang Li,Shahzada Zulkifal,Qingtang Zhang,Yunxiang Hou,Guang Chen,Guodong Tang

DOI: https://doi.org/10.1021/acsami.1c20549

2022-01-09

Abstract:SnSe crystals have gained considerable interest for their outstanding thermoelectric performance. Here, we achieve excellent thermoelectric properties in Sn0.99-xPbxZn0.01Se crystals via valence band convergence and point-defect engineering strategies. We demonstrate that Pb and Zn codoping converges the energy offset between multiple valence bands by significantly modifying the band structure, contributing to the enhancement of the Seebeck coefficient. The carrier concentration and electrical conductivity can be optimized, leading to an enhanced power factor. The dual-atom point-defect effect created by the substitution of Pb and Zn in the SnSe lattice introduces strong phonon scattering, significantly reducing the lattice thermal conductivity to as low as 0.284 W m-1 K-1. As a result, a maximum ZT value of 1.9 at 773 K is achieved in Sn0.93Pb0.06Zn0.01Se crystals along the bc-plane direction. This study highlights the crucial role of manipulating multiple electronic valence bands in further improving SnSe thermoelectrics.

materials science, multidisciplinary,nanoscience & nanotechnology
Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Fu Li,Wenting Wang,Xincheng Qiu,Zhuanghao Zheng,Ping Fan,Jingting Luo,Bo Li

DOI: https://doi.org/10.1039/c7qi00436b

IF: 7.779

2017-01-01

Inorganic Chemistry Frontiers

Abstract:Improved electrical conductivity together with reduced lattice thermal conductivity is achieved for n-type cation-site Ti, Pb co-doped SnSe, resulting in an optimized thermoelectric property.
Improved thermoelectric properties of n-type polycrystalline SnSe via carrier concentration optimization

Xing Yang,Wen-Hao Gu,Wen-Jie Li,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1016/j.jpcs.2022.111077

IF: 4.383

2023-01-01

Journal of Physics and Chemistry of Solids

Abstract:Polycrystalline SnSe thermoelectric materials have received extensive interests owing to the low thermal conductivity and available mechanical properties. However, the low electrical conductivity seriously hinders its application. In this work, stemming from the introducing of Hf and Cl substitution, they released more electrons. Owing to the improved carrier concentration, a high electrical conductivity of 33 S cm−1 for the SnSe0.95+1 wt%HfCl4 sample was obtained at 773 K, about 5 times as much as that of the SnSe0.95 sample. Thus, a peak power factor of 553.8 μW m−1 K−2 of SnSe0.95+3 wt%HfCl4 sample at 773 K was obtained. Meanwhile, the phonon scattering was enhanced due to the decrease of grain size, the lattice thermal conductivity was suppressed. The pretty low κl of 0.33 W m−1 K−1 was obtained at 773 K for the SnSe0.95+4 wt%HfCl4 sample. Consequently, the peak ZT value of ∼1.1 was achieved for SnSe0.95+3 wt%HfCl4 sample at 773 K.

physics, condensed matter,chemistry, multidisciplinary
High Thermoelectric Performance in P‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering

Xiaolei Shi,Angyin Wu,Tianli Feng,Kun Zheng,Weidi Liu,Qiang Sun,Min Hong,Sokrates T. Pantelides,Zhi-Gang Chen,Jin Zou

DOI: https://doi.org/10.1002/aenm.201803242

IF: 27.8

2019-01-01

Advanced Energy Materials

Abstract:Herein, a high figure of merit (ZT) of approximate to 1.7 at 823 K is reported in p-type polycrystalline Cd-doped SnSe by combining cation vacancies and localized-lattice engineering. It is observed that the introduction of Cd atoms in SnSe lattice induce Sn vacancies, which act as p-type dopants. A combination of facile solvothermal synthesis and fast spark plasma sintering technique boosts the Sn vacancy to a high level of approximate to 2.9%, which results in an optimum hole concentration of approximate to 2.6 x 10(19) cm(-3) and an improved power factor of approximate to 6.9 mu W cm(-1) K-2. Simultaneously, a low thermal conductivity of approximate to 0.33 W m(-1) K-1 is achieved by effective phonon scattering at localized crystal imperfections, as observed by detailed structural characterizations. Density functional theory calculations reveal that the role of Cd atoms in the SnSe lattice is to reduce the formation energy of Sn vacancies, which in turn lower the Fermi level down into the valence bands, generating holes. This work explores the fundamental Cd-doping mechanisms at the nanoscale in a SnSe matrix and demonstrates vacancy and localized-lattice engineering as an effective approach to boosting thermoelectric performance. The work provides an avenue in achieving high-performance thermoelectric properties of materials.
High thermoelectric properties in polycrystalline SnSe materials realized by rare earth halide Co-doping

Xing Yang,Xiao-Yan Ma,Tian-En Shi,Wang-Qi Bao,Jun Wang,Zi-Yuan Wang,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1016/j.ceramint.2024.03.173

IF: 5.532

2024-03-01

Ceramics International

Abstract:SnSe materials have garnered significant interest due to the intrinsic low thermal conductivity. However, its limited electrical conductivity hinders their practical implementation. This study achieved a high ZT value of 1.40 at 773 K in the samples of n-type polycrystalline SnSe0.95 + x wt% SmCl3 + y wt% ErCl3 (x = 0, 0.75, 1.0, 1.25, and 1.5; y = 0, 0.0675, 0.125, and 0.25) since (SmCl3, ErCl3) co-doping decoupled the electrical-thermal transport properties. First, the released electron carrier concentration due to SmCl3 doping enhanced the electrical transport properties. The SnSe0.95 + 1.25 wt% SmCl3 sample exhibited a high power factor of 563 μWm−1K−2 at 773 K. Then, the lattice thermal conductivity markedly decreased with further ErCl3 doping due to the high-density dislocations and coherent boundary, resulting in effective the phonon scattering. Additionally, the special microtopography was conducive to the decreased lattice thermal conductivity. Therefore, the SnSe0.95 + 1.25 wt% SmCl3 + 0.125 wt% ErCl3 sample achieved a low lattice thermal conductivity value of 0.28 Wm−1K−1 at 773 K. Simultaneously, the (SmCl3, ErCl3) co-doped samples maintained the electrical transport properties than the SmCl3-doped samples. Consequently, the SnSe0.95 + 1.25 wt% SmCl3 + 0.125 wt% ErCl3 sample obtained a peak ZT value of 1.40 at 773 K and a competitive average ZT value of 0.37 from 323 to 773 K, and a theoretically calculated conversion efficiency reached 7.2%, which can be applied in the deep space for power generation. This strategy can be utilized to optimize the thermoelectric performance of other thermoelectrical material systems.

materials science, ceramics
Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion

Yu-Ping Wang,Bing-Chao Qin,Dong-Yang Wang,Tao Hong,Xiang Gao,Li-Dong Zhao

DOI: https://doi.org/10.1007/s12598-021-01753-w

IF: 6.318

2021-05-26

Rare Metals

Abstract:SnSe crystals have been discovered as one of the most efficient thermoelectric materials due to their remarkable thermal and electrical transports. But the polycrystalline SnSe possesses much lower performance especially for the low carrier mobility and electrical conductivity. We firstly attempted to explain and verify the difference in the electrical conductivity as a function of temperature between p-type crystalline and polycrystalline SnSe by considering the grain boundary effects in the polycrystalline samples. On the basis of 2% Na doping to optimize the carrier concentration, the carrier mobility is improved by further introducing In, leading to enhanced carrier mobility from 3 to 9 cm2·V−1·s−1 in polycrystalline SnSe. Moreover, In doping introduces extra resonant levels in SnSe, which increases the density of states near Fermi level and leads to an enhanced band effective mass. Large Seebeck coefficient of ~ 205 μV·K−1 at 300 K and maximum power factor of ~ 7.5 μW·cm−1·K−2 at 773 K can be obtained in the Sn0.975Na0.02In0.005Se sample, leading to a competitively high dimensionless figure of merit (ZT) value exceeding 1.1 at 773 K.摘要晶体 SnSe 由于出色的电声传输性能, 不断表现出优异的热电特性。但是, 相对于晶体, 多晶 SnSe 的电导率和载流子迁移率呈现数量级的降低。首先, 我们试图通过考虑多晶样品中晶界的影响来解释 p 型晶体 SnSe 和多晶 SnSe 的电导率随温度变化的差异。通过掺杂 2% 的 Na 来优化多晶 SnSe 的载流子浓度, 在此基础上引入 In 提高了基体的载流子迁移率, 样品的室温迁移率由 3 cm2·V-1·s-1增加到 9 cm2·V-1·s-1。此外, 通过在多晶 SnSe 中掺杂 In 引入了额外的共振能级, 增加了费米能级附近的态密度, 提高了能带有效质量。引入 In 之后, Sn0.975Na0.02In0.005Se样品在 300 K 时的塞贝克系数从 ~ 137提高到 ~ 205 μ V·K-1, 在 773 K 时的最大功率因子从 ~ 3.9提高到 ~ 7.5 μ W·cm-1·K-2, 使热电优值 (ZT) 在 773 K 时超过了 1.1Graphical Abstract

materials science, multidisciplinary,metallurgy & metallurgical engineering

Enhanced Thermoelectric Performance in N-Type Polycrystalline SnSe by PbBr2 Doping

Enhanced thermoelectric performance of n -type PbTe bulk materials fabricated by semisolid powder processing

Raising thermoelectric performance of n-type SnSe: Via Br doping and Pb alloying

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Enhanced thermoelectric performance of n-type polycrystalline SnSe via NdCl3 doping

Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation

Study on the Thermoelectric Properties of N-Type Polycrystalline SnSe by CeCl3 Doping

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Study on the Thermoelectric Properties of n-Type Polycrystalline SnSe by CeCl 3 Doping

Re‐Doped p‐Type Thermoelectric SnSe Polycrystals with Enhanced Power Factor and High ZT > 2

Realizing high-ranged thermoelectric performance in PbSnS2 crystals

Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe

Enhanced mid-temperature thermoelectric performance of textured SnSe polycrystals made of solvothermally synthesized powders

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

Realizing High Thermoelectric Performance in p-Type SnSe Crystals via Convergence of Multiple Electronic Valence Bands

Optimization of Thermoelectric Properties of N-Type Ti, Pb Co-Doped Snse

Improved thermoelectric properties of n-type polycrystalline SnSe via carrier concentration optimization

High Thermoelectric Performance in P‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering

High thermoelectric properties in polycrystalline SnSe materials realized by rare earth halide Co-doping

Realizing high thermoelectric properties in p-type polycrystalline SnSe by inducing DOS distortion