Abstract:A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation. Including the major physical effects in state-of-the art MOS devices, the model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a single I-V expression, and guarantees the continuities of I-ds, conductances and their derivatives throughout all V-gs, V-ds, and V-bs bias conditions, Compared with the previous BSIM models, the improved model continuity enhances the convergence property of the circuit simulators. Furthermore, the model accuracy has also been enhanced by including the dependencies of geometry and bias of parasitic series resistances, narrow width, bulk charge, and DIBL effects. The new model has the extensive built-in dependencies of important dimensional and processing parameters (e.g., channel length, width, gate oxide thickness, junction depth, substrate doping concentration, etc.), It allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling. The model has been implemented in the circuit simulators such as Spectre, Hspice, SmartSpice, Spice3e2, and so on.

Benchmark Tests on Symmetry and Continuity Characteristics Between BSIM4 and ULTRA-BULK

Tests on Symmetry and Continuity between BSIM4 and BSIM5

BSIM Model Research and Recent Progress

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An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

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Symmetry Realization of BSIM Model with Dynamic Reference Method for Circuit Simulation

Benchmark tests on conventional surface potential based charge-sheet models and the advanced PUNSIM development

A Physical and Scalable I-V Model in BSIM3v3 for Analog/digital Circuit Simulation

An Improved Millimeter Wave MOSFET Model Based on BSIM4

Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs

Charge-based Core and the Model Architecture of BSIM5

Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

BSIM3V3 MOSFET MODEL

The Development of the Next Generation Bsim for Sub-100nm Mixed-Signal Circuit Simulation

Electromagnetic Compatibility Benchmark-Modeling Approach for a Dual-Die CPU

Bsim5 Mosfet Model

Benchmark of Rigorous Methods for Electromagnetic Field Simulations

Bsim5: an Advanced Charge-Based Mosfet Model for Nanoscale Vlsi Circuit Simulation

Finite element analysis on ultrasonic propagation of interface bonding of bimetal composites