Abstract:The improved RF performance of silicon-based technologies over the years and their potential use in telecommunication applications has increased the research in RF modelling of MOS transistors. Especially for analog circuits, accurate RF small signal and large signal transistor models are required. In this paper, we propose an accurate, non-quasi-static, large signal (i.e., nonlinear) RF MOSFET model. Our model consists of a current source and a charge source at the drain terminal and a charge source at the gate terminal. The sources' magnitudes are calculated from the gate-bias and drain-bias dependent elements of the MOSFET equivalent circuit. The MOSFET equivalent circuit elements on itself are extracted from S-parameters at all gate voltages and drain voltages that occur in large signal operation. The accuracy of the equivalent circuit based model is validated by large signal RF measurements using a nonlinear network measurement system. Large signal modelling results using the BSIM3v3 compact model are also presented. Both the equivalent circuit based model and the BSIM3v3 model meet the requirements to describe accurately the RF large signal behaviour of MOS transistors.

Charge-based Core and the Model Architecture of BSIM5

Bsim5: an Advanced Charge-Based Mosfet Model for Nanoscale Vlsi Circuit Simulation

Bsim5 Mosfet Model

BSIM Model Research and Recent Progress

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

BSIM3V3 MOSFET MODEL

The Development of the Next Generation Bsim for Sub-100nm Mixed-Signal Circuit Simulation

Tests on Symmetry and Continuity between BSIM4 and BSIM5

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Charge Based Non-Quasi-Static Transient Model for Soi Mosfets

Modeling of Sic Mosfet in Matlab/Simulink

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Approaches and Options for Modeling Sub-0.1 /spl Mu/m CMOS Devices

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

A Charge-Based Intrinsic Capacitance Model For Thin-Film Soi Short-Channel Mosfet

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs