Abstract:Recently, black phosphorus (BP) has attracted enormous attention as the potential materials for next‐generation photonic device applications due to the high carrier mobility and the narrow bandgap. However, the metal–semiconductor–metal (MSM) structure of BP photodetectors cannot achieve simultaneously high photoresponsivity and fast photoresponse, due to its natural surface defects, the thinness of absorption layer, and the instability of BP in the air, which limits the application of BP MSM structure photodetectors. Here, infrared photodetectors with the multilayer BP sandwiched between the top protective layer of boron nitride and the bottom Au electrodes are demonstrated. The BP photodetectors exhibit a fast photoresponse of ≈16 µs, a broadband photodetection up to ≈2 µm, a high light on/off ratio of ≈103 which is higher than most BP photodetectors, together with an acceptable photoresponsivity of ≈1.55 A W−1 for the wavelength of 1550 nm at room temperature. Scanning photocurrent microscopy measurements show that the mechanism of BP photodetectors is a combination of photovoltaic effect and photoconductive effect. This work demonstrates an effective way to design high‐performance photovoltaic/photoconductive devices based on 2D materials. Infrared photodetectors with the multilayer black phosphorus (BP) sandwiched between the top protective layer of boron nitride and bottom Au electrodes are demonstrated. The BP photodetectors exhibit a high light on/off ratio of ≈103, a fast photoresponse of ≈16 μs for the wavelength of 1550 nm and a broadband photodetection up to ≈2 μm.

Simulation Investigation of Strained Black Phosphorus Photodetector for Middle Infrared Range.

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Multilayer Black Phosphorus Near-Infrared Photodetectors

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

High Performance Mid-Wave Infrared Photodetector Based on Graphene/black Phosphorus Heterojunction

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector

Visible to Mid-Infrared Photodetector Based on Black Phosphorous-MoS2 Van Der Waals Heterojunction

Piezoelectric substrate-induced strain engineering on tuning polarized Raman spectra of crystalline black phosphorus

Highly Polarization Sensitive Infrared Photodetector Based on Black Phosphorus-on-wse 2 Photogate Vertical Heterostructure

Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces

Ionic Liquid Gated Black Phosphorus/sic-Based 2D/3D Mixed-Dimensional Photodetector

Anisotropic Visible Photoluminescence from Thermally Annealed Few-layer Black Phosphorus.

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Single-detector Black Phosphorus Monolithic Spectrometer with High Spectral and Temporal Resolution