Whispering Gallery Mode Lasing from InGaN/GaN Quantum Well Microtube

Yufeng Li,Lungang Feng,Xilin Su,Qiang Li,Feng Yun,Ge Yuan,Jung Han
DOI: https://doi.org/10.1364/oe.25.018072
IF: 3.8
2017-01-01
Optics Express
Abstract:In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm2. Such emission shows predominant TM polarization parallel to the microtube axis.
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