Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Self-assembled InGaAs/GaAs Quantum Dot Microtube Coherent Light Sources on GaAs and Silicon

Self-Organized Inas Quantum Dot Tube Lasers and Integrated Optoelectronics on Si

Multi-Wavelength Rolled-Up Ingaas/Gaas Quantum Dot Microtube Lasers

Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.

High Performance Quantum Dot Microtube Lasers and Nanowire LEDs on Si

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.

Controlled Transfer of Single Rolled-Up InGaAs–GaAs Quantum-Dot Microtube Ring Resonators Using Optical Fiber Abrupt Tapers

Rolled-up InGaAs/GaAs quantum dot micro- and nanotube lasers

Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature

Tunable Quantum Dot Lasers Grown Directly on Silicon

III-Nitride based self-rolled-up microcavities (Conference Presentation)

Whispering Gallery Mode Lasing from InGaN/GaN Quantum Well Microtube

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

Strain Spectrally-Tunable Single-Photon Source Based on a Quantum Dot in Microcavity (conference Presentation)

Self-aligned photonic defect microcavities with site-controlled quantum dots

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates