Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.

Self-assembled InGaAs/GaAs Quantum Dot Microtube Coherent Light Sources on GaAs and Silicon

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.

Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Self-Organized Inas Quantum Dot Tube Lasers and Integrated Optoelectronics on Si

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature

Multi-Wavelength Rolled-Up Ingaas/Gaas Quantum Dot Microtube Lasers

High Performance Quantum Dot Microtube Lasers and Nanowire LEDs on Si

Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

Optical Spectroscopy of Quantum Confined States in Gaas/Algaas Quantum Well Tubes

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes

Rolled-up InGaAs/GaAs quantum dot micro- and nanotube lasers

Stimulated whispering gallery modes emission from green to UVA realized by AlInGaN based quantum wells microtube

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes.

Single Photon Emissions from InAs/GaAs Quantum Dots Embedded in GaAs/SiO 2 Hybrid Microdisks