Single Photon Emissions from InAs/GaAs Quantum Dots Embedded in GaAs/SiO 2 Hybrid Microdisks

P. Y. Yue,X. M. Dou,H. Y. Wang,B. Ma,Z. C. Niu,B. Q. Sun
DOI: https://doi.org/10.1016/j.optcom.2017.11.004
IF: 2.4
2017-01-01
Optics Communications
Abstract:An approach to integrate InAs/GaAs quantum dots (QDs) active layer on SiO2/Si chip for single photon emitter is demonstrated. The QDs are embedded in GaAs/SiO2 hybrid whispering gallery mode microdisks with the diameters of 10 and 5 mu m, corresponding to the quality factors (Q) of 2287 +/- 167 and 4366 +/- 208, respectively. Temperature tuning QD-cavity resonance is observed. The cavity-enhanced exciton spontaneous emission and single photon emission characteristics are studied. (C) 2017 Elsevier B.V. All rights reserved.
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