Rolled-up InGaAs/GaAs quantum dot micro- and nanotube lasers

Mi, Z.,Li, F.

DOI: https://doi.org/10.1109/PHOTWTM.2010.5421924

2010-01-01

Abstract:This work achieved, for the first time, lasing in rolled-up semiconductor tubes at room temperature. The devices are characterized an ultralow threshold power (~ 4 Â¿W), an intrinsic lasing linewidth of ~ 0.2 0.3 nm, and a linear polarization with the electric field parallel to the tube surface.

What problem does this paper attempt to address?

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser

Ch. Strelow,M. Sauer,S. Fehringer,T. Korn,C. Schüller,A. Stemmann,Ch. Heyn,D. Heitmann,T. Kipp

DOI: https://doi.org/10.1063/1.3271176

2009-11-04

Abstract:We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold. We observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calculated by rate equations.

Other Condensed Matter
Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

G. S. Solomon,S. Goetzinger,W. Fang,Z. G. Xie,H. Cao

DOI: https://doi.org/10.1109/cleo.2007.4452488

2007-01-01

Abstract:We describe microdisk lasers exhibiting submicrowatt CW lasing thresholds from a small number of QD emitters. Changes in the cavity linewidth, second-order correlation measurements, and output emission versus input pumping are used to verify lasing. (C)2007 Optical Society of America
High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Junqi Liu,Fengqi Liu,Lü Li,Yong Shao,Yu Guo,Zhanguo Wang

DOI: https://doi.org/10.1088/0256-307x/23/7/035

2006-01-01

Abstract:We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 μm respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.
Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Yating Wan,Sen Zhang,Justin C. Norman,MJ Kennedy,William He,Yeyu Tong,Chen Shang,Jian‐Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202070021

2020-01-01

Abstract:In article number 1900348, Yating Wan and co-workers demonstrate directly modulated, single-mode, tunable InAs/GaAs quantum dot (QD) lasers at 1.3 µm wavelength range, by combining the advantages of QDs with a special designed half-wave coupled cavity structure. Without involving re-growth steps or sub-wavelength grating lithography, 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB and output power of over 9 mW.
Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

Xin Yan,Wei Wei,Fengling Tang,Xi Wang,Luying Li,Xia Zhang,Xiaomin Ren

DOI: https://doi.org/10.1063/1.4975780

IF: 4

2017-02-06

Applied Physics Letters

Abstract:Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.

physics, applied
InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Y.-F. Lao,C.-F. Cao,H.-Z. Wu,M. Cao,Q. Gong

DOI: https://doi.org/10.1049/el:20093380

2009-01-01

Electronics Letters

Abstract:1.3 mu m vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2 dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity mirrors, respectively. The device with a 5 mu m-diameter selectively etched tunnel-junction aperture exhibits submilliampere threshold current as low as 0.54 mA and single-transverse mode emission. Maximum output optical power of 1.9 mW was observed in multimode lasing devices.
Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Yeyu Tong,Chen Shang,Jian-Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201900348

2020-01-01

LASER & PHOTONICS REVIEWS

Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.
Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers

Xutao Zhang,Ruixuan Yi,Nikita Gagrani,Ziyuan Li,Fanlu Zhang,Xuetao Gan,Xiaomei Yao,Xiaoming Yuan,Naiyin Wang,Jianlin Zhao,Pingping Chen,Wei Lu,Lan Fu,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1021/acsnano.1c02425

IF: 17.1

2021-05-10

ACS Nano

Abstract:We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm<sup>2</sup> per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm<sup>2</sup> per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c02425?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c02425</a>.Normalized PL spectral mapping of the InGaAs QDs; energy-dispersive spectroscopy (EDS) analysis; schematic diagram of the experiment setup; transverse mode simulations; lasing power output measurement; emission spectra of a GaAs/InGaAs multi-QD NW; lasing characterization from two different GaAs/InGaAs multi-QD NWs; the spontaneous emission spectra under low pump fluence; lasing characterization from a GaAs/InGaAs multi-QDs NW at 180 K; emission spectra from a GaAs/InGaAs/AlGaAs multi-QD NW at different temperatures; simulations of the polarization dependence; mode hopping analysis; optical image from a GaAs/InGaAs/AlGaAs multi-QD NW; and growth conditions (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c02425/suppl_file/nn1c02425_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Hui Jia,Xuezhe Yu,Taojie Zhou,Calum Dear,Jiajing Yuan,Mingchu Tang,Zhao Yan,Bogdan-Petrin Ratiu,Qiang Li,Alwyn Seeds,Huiyun Liu,Siming Chen

DOI: https://doi.org/10.1063/5.0142391

IF: 4

2023-03-13

Applied Physics Letters

Abstract:In this Letter, we present long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots as the active medium, which were grown on InP (001) substrate by solid-source molecular beam epitaxy. The 8.4- μm-diameter quantum dot microdisk laser is operated at room temperature under pulsed optically pumping conditions. Multi-wavelength lasing emissions at ∼1.6 μm were achieved with a low lasing threshold of 30 μW and a quality factor of ∼1336. The lasing behavior was verified by the “ S” shape L– L curve, linewidth narrowing effect, and strong speckle patterns of the collected near field intensity profile. The demonstrated long-wavelength lasers with low threshold and ultracompact footprint can find potential applications in integrated gas detection and highly localized label-free biological and biochemical sensing.

physics, applied
Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Dingding Ren,Lyubomir Ahtapodov,Julie S. Nilsen,Jianfeng Yang,Anders Gustafsson,Junghwan Huh,Gavin J. Conibeer,Antonius T.J. van Helvoort,Bjørn-Ove Fimland,Helge Weman

DOI: https://doi.org/10.1021/acs.nanolett.7b05015

2017-08-23

Abstract:Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance.

Mesoscale and Nanoscale Physics
Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m

A. Markus

DOI: https://doi.org/10.5075/EPFL-THESIS-3060

Abstract:Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteristics as compared to bulk or quantum-well (QW) devices. In particular In(Ga)As QD lasers on GaAs substrates are of largest interest as the spectral range of their emission wavelength reaches further into the infrared than that of QW lasers of the same material system. The emission wavelength of strained InGaAs QW lasers is limited to about 1150nm, whereas in In(Ga)As QD lasers an emission wavelength beyond 1.3µm is feasible. In the recent past ultralow threshold current densities combined with decreased temperature sensitivity, high modulation bandwidth and low chirp were reported on these 1.3µm QD lasers - as predicted many years ago. The differential efficiency of these devices is to date lower than expected. There are, however, difficulties associated with the random shape and size distribution of the QDs, and a strongly reduced density of states. The latter facilitates a low transparency current and consequently a low threshold current. But it is also accompanied by a smaller modal gain than it is usual in a QW laser, which has severe consequences for both the technical feasibility and the functionality of such a device. Particularly in applications demanding laser structures with larger total loss - e.g. for short cavity lengths and without high reflection coatings at the facets - the modal gain that can be obtained from a single layer of QDs is insufficient. One major goal of this thesis has been to realize In(Ga)As QD lasers emitting at 1.3µm. To achieve this, various QD growth structures have been analyzed in photoluminescence experiments, in order to optimize the QD properties with respect to emission wavelength and material gain. In addition comparative studies with other material systems emitting at 1.3µm have been conducted, e.g. GaInNAs QWs. In this context the major advantages and drawbacks of QDs appeared very clearly - the much better efficiency and the much lower density of states. Further on the QD efficiency has been tested in various light emitting diode (LED) structures, in order to optimize the design of the laser structures. During the characterization of the first fabricated broad-area QD lasers a novel and intriguing behavior became apparent: under certain conditions the devices operate at two well separated wavelengths, corresponding to a ground-state and an excited-state transition. In order to understand this behavior a comprehensive numerical model based on a rate equation system has been developed. The effect of simultaneous two-state lasing has then been attributed to incomplete clamping of the excited-state population above ground-state lasing threshold. The exact behavior of the energy level populations during lasing operation have been studied further in spontaneous emission spectra detected from a µm-sized hole on the top contact of the devices. In a very fruitful collaboration with Opto+, Alcatel CIT (Marcoussis, France) the dynamical properties of single transverse-mode lasers based on the same device structure have been investigated. Also here the QD lasers showed a different behavior as compared to QW devices: (1) The linewidth enhancement factor increases dramatically above threshold. (2) The modulation performance is degraded when the second lasing line appears. (3) Indications for the absence of relaxation oscillations on the ground state transition have been found. To a certain extent the experimentally found behavior could be explained in the framework of the rate equation model. For example the increase of the linewidth enhancement factor is well explained by an increasingly asymmetric gain spectrum due to the increase of excited state population above threshold. Finally quantum dot lasers including an intracavity quantum dot absorber section have been fabricated and characterized. In such a device the total loss can be manipulated by changing the bias on the absorber section. The basic idea was to achieve an efficient wavelength switch between the lasing lines of the ground state energy transition and the excited state energy transition, by electrically manipulating the total loss. This effect could not be demonstrated. The characteristics of this device could be qualitatively described in a traveling-wave rate equation model. This model also predicts the occurrence of self-sustained pulses in this device - a behavior that could not be investigated experimentally during this thesis.

Physics,Engineering,Materials Science
Ultralow-Threshold Single-Mode Lasing from Phase-Pure CdSe/CdS Core/Shell Quantum Dots.

Chen Liao,Ruilin Xu,Yanqing Xu,Chunfeng Zhang,Min Xiao,Lei Zhang,Changgui Lu,Yiping Cui,Jiayu Zhang

DOI: https://doi.org/10.1021/acs.jpclett.6b02465

IF: 6.888

2016-01-01

The Journal of Physical Chemistry Letters

Abstract:The development of colloidal quantum dot (QD) lasers is blocked by Auger recombination (AR). Here, phase-pure wurtzite CdSe/CdS core/shell QDs with controlled shell thickness are reported, which possess nearly defect-free core/shell interfaces. Benefiting from increased volume, electron-hole partial spatial separation, and nearly defect-free alloyed interface, this series of QDs exhibit a greater than 3 orders of magnitude decrease in AR rates with increasing shell thickness. Consequently, the amplified spontaneous emission threshold of the QDs with an 11 monolayer CdS shell is found to reach a minimum of 16 mu J cm(-2). A record long lifetime (>1000 ps) and extraordinarily large bandwidth (>170 nm) of optical gain are observed by employing ultrafast transient absorption spectroscopy. We leverage the low threshold gain of the QDs to fabricate microlasers that display single-mode operation and an ultralow threshold of similar to 2 mu J cm(-2). Our results represent a valuable step toward practical QD lasers.
Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes

Raul D Rodriguez,Evgeniya Sheremet,Dominic J Thurmer,Daniel Lehmann,Ovidiu D Gordan,Falko Seidel,Alexander Milekhin,Oliver G Schmidt,Michael Hietschold,Dietrich Rt Zahn

DOI: https://doi.org/10.1186/1556-276X-7-594

2012-10-26

Nanoscale Res Lett

Abstract:Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated.
Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode

Matthias C. Löbl,Immo Söllner,Alisa Javadi,Tommaso Pregnolato,Rüdiger Schott,Leonardo Midolo,Andreas V. Kuhlmann,Søren Stobbe,Andreas D. Wieck,Peter Lodahl,Arne Ludwig,Richard J. Warburton

DOI: https://doi.org/10.1103/PhysRevB.96.165440

2020-10-08

Abstract:We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,\mu\text{eV}$, just a factor of two above the transform limit. Clear optical spin pumping is observed in a magnetic field of $0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots -- highly coherent single photon generation, ultra-fast optical spin manipulation -- in the thin diodes required in quantum nano-photonics and nano-phononics applications.

Mesoscale and Nanoscale Physics
Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere

Sébastien Steiner,Jean Hare,Valérie Lefèvre-Seguin,Jean-Michel Gérard

DOI: https://doi.org/10.1364/OE.15.010052

2007-05-11

Abstract:We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots coupled to the evanescent wave of the high-$Q$ whispering gallery modes of a silica microsphere. In spite of high temperature and $Q$-spoiling of whispering gallery modes due to diffusion and refraction on the high index semiconductor sample, room temperature lasing is obtained with less than 100 quantum dots. This result highlights the feasibility and interest of combining self-assembled quantum dots and microspheres in view of cavity-quantum electrodynamics experiments.

Quantum Physics
Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

Yi Li,Xin Yan,Xia Zhang,Chao Wu,Jiahui Zheng,Chaofei Zha,Tianyang Fu,Li Gong,Xiaomin Ren

DOI: https://doi.org/10.1016/j.optlastec.2022.108150

2022-08-01

Abstract:A core-shell GaAs/InGaAs nanowire/quantum dot hybrid structure nanolaser is proposed and studied by the finite-difference time-domain method. The results show that the coupled nanowire cavity-emitter system enables enhancement of the spontaneous radiation rate of quantum dots, resulting in a high Purcell factor of 15.5 at a diameter of 330 nm. Due to the quantum confinement and reduced propagation loss, the hybrid structure laser exhibits a threshold lower by 1–2 magnitudes than that of the pure nanowire laser. In addition, by incorporating multiple quantum dots, the lasing intensity is significantly enhanced at the expense of threshold. This work may pave the way for the development of ultra-small low-consumption near infrared lasers and related microsystems.

optics,physics, applied
High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

Shuai Wang,Zun-Ren Lv,ShengLin Wang,Hong-Yu Chai,Wan-Lin Liu,Ke-Han Jiang,Xiao-Guang Yang,Tao Yang

DOI: https://doi.org/10.1364/oe.537635

IF: 3.8

2024-09-11

Optics Express

Abstract:Shuai Wang, Zunren Lv, Shenglin Wang, Hongyu Chai, Wanlin Liu, Kehan Jiang, Xiaoguang Yang, Tao Yang High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked ... [Opt. Express 32, 34444-34452 (2024)]

optics
InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Alexey E Zhukov,Natalia V Kryzhanovskaya,Eduard I Moiseev,Anna S Dragunova,Mingchu Tang,Siming Chen,Huiyun Liu,Marina M Kulagina,Svetlana A Kadinskaya,Fedor I Zubov,Alexey M Mozharov,Mikhail V Maximov

DOI: https://doi.org/10.3390/ma13102315

2020-05-18

Abstract:An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15-31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

Rolled-up InGaAs/GaAs quantum dot micro- and nanotube lasers

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Tunable Quantum Dot Lasers Grown Directly on Silicon

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m

Ultralow-Threshold Single-Mode Lasing from Phase-Pure CdSe/CdS Core/Shell Quantum Dots.

Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes

Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode

Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere

Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods