Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)
Wurui Song,Xingfei Zhang,Xiaoping Zhou,Zhicong Li,Meng Liang,Junjie Kang,Yan,Yiyun Zhang,Zhiqiang Liu,Xiaoyan Yi,Junxi Wang,Jinmin Li
DOI: https://doi.org/10.1364/oe.530118
IF: 3.8
2024-01-01
Optics Express
Abstract:In this work, combining a series of wafer bonding, laser lift-off and chemical mechanical polishing processes, submicron-thick wafer-scale GaN-based thin-film epilayers are successfully transferred on Si (100), which provides a heterogeneous platform for fabricating microcavities for nitride-based integrated photonics. Low-threshold lasing via optical pumping from these transferred dry-etched green micro-ring cavities on Si is demonstrated by covering the whole micro-rings with dielectric distributed Bragg reflectors (DBRs), which greatly reduces the lasing threshold upon a better optical confinement at the ring rim. A high quality-factor of similar to 3800 can be observed from the micro-rings beyond the lasing threshold under pulsed excitation conditions. Furthermore, room-temperature continuous-wave (CW) lasing at a wavelength of 521.7 nm with an ultralow threshold of 0.35 kW/cm2 2 is achieved. Our results suggest the use of a burying DBR layer notably improves the WGM microcavity confinement, providing insights for the design of low-threshold micro-lasers and low-loss waveguides for potential integrated photonic applications in the visible light range on the Si platform.