Abstract:Atomic layer deposition (ALD) of Al2O3 is of interest for a wide range of micro-nanoelectronic applications, where the electrical properties of the deposited layers can be strongly affected by deposition conditions and post-deposition treatments. In this work, a mercury-probe capacitance-voltage characterization is carried out on Al2O3 films deposited on silicon by ALD at different temperatures and subjected to various thermal treatments in N2 ambient. Effective positive charges located at the semiconductor/dielectric interface are encountered for the films deposited at the lowest temperature (100°C). Positive Vfb shifts are always registered after the different thermal annealing conditions studied; however, the impact of the thermal treatments is found to be different depending on the deposition temperature. A significant negative charges build-up is observed after a 30 min anneal at 450°C, where improved surface passivation properties are achieved. Interestingly, the hysteresis, as well as the Vfb shifts, clearly diminish for higher deposition temperatures or after a thermal anneal. However, the highest temperature treatments (≥800°C) result in significant interface states generation. Finally, exploratory experiments about the stability of the Al2O3 layers under UV-light irradiation (in the 200–300 nm wavelengths range) show that this can be responsible for a significant degradation of their electrical characteristics.

Influences of Rapid Thermal Annealing on the Characteristics of Al 2 O 3 \la 2 O 3 \si and La 2 O 3 \al 2 O 3 \si Films Deposited by Atomic Layer Deposition

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effect of Rapid Thermal Annealing on the Optical Properties of Nb2O5-Al2O3 Nanolaminate Films

Influences of Annealing on the Micro-Structure of STO Ferroelectric Films

The Impact of Thickness and Thermal Annealing on Refractive Index for Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition

On the influence of annealing on the compositional and crystallographic properties of sputtered Li-Al-O thin films

Effect of Rapid Thermal Annealing on Optical and Interfacial Properties of Atomic-Layer-Deposited Lu2o3 Films on Si (100)

Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

The influence of post-annealing on the chemical structures and dielectric properties of the surface layer of Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub> films

Effects of Rapid Thermal Annealing Parameters on Crystal Ion Slicing-Fabricated LiTaO3 Thin Film

Effects of Rapid Thermal Annealing on Properties of Hfalo Films Directly Deposited by Ald on Graphene

The Effect of Annealing Temperatures on the Microstructure of La0.5ca0.5mno3 Films

Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

Properties of High-Quality LaAlO3 Film Deposited by in Situ Plasma-Enhanced-Atomic-Layer-Deposition

Effects of Rapid Thermal Annealing on Atomic–layer–deposition Pt Nanoparticles

Properties of high-quality LaAlO3 film deposited by in-situ plasma-enhanced-atomic-layer-deposition