Effects of Rapid Thermal Annealing on Atomic–layer–deposition Pt Nanoparticles

Hongbing Chen,Beili Zhu,Chen Sun,Xun Qing-Qing,Ding Shi-Jin,Wei Zhang
2012-01-01
Abstract:Pt nanopartides were prepared on AI2O3 films by atomic layer deposition using (MeCp)Pt(CH_3)_3 and O_2 as precursors,and the effect of rapid thermal annealing(RTA) on the characteristics of Pt nanopartides was investigated.The results show that as the annealing temperature rises from 700 to 900℃,Pt nanopartides exhibit the increase of the dimensions and self-separation,a tendency to spherical growth,and a slight decrease in particle density.With increasing the annealing time from 15 s to 60 s at 800℃,Pt nanopartides grow big gradually together with increscent dimension dispersion and a decreasing density.Therefore,it is concluded that the annealing at 800℃for 15 s can achieve high density(9.29×10~(11)cm~(-2)),uniform and well-separated Pt nanopartides.Moreover,when the annealing temperature is increased to 900℃,some Pt atoms are oxidized,which is likely due to the interfacial reaction between Pt and Al_2O_3.
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