Low Loss Chip‐to‐Chip Couplers for High‐Density Co‐Packaged Optics

Drew Weninger,Samuel Serna,Luigi Ranno,Lionel Kimerling,Anuradha Agarwal

DOI: https://doi.org/10.1002/adem.202402095

IF: 3.6

2024-12-10

Advanced Engineering Materials

Abstract:For the first time, light is evanescently coupled between separately fabricated silicon and silicon nitride photonic‐integrated circuits using automated pick‐and‐place assembly. Results demonstrate greater than 90% coupling efficiency near telecommunication wavelengths and micron‐scale alignment tolerances, providing a means to eliminate the packaging inefficiencies of active fiber array alignment and achieve Pbps data capacities in co‐packaged optics systems. An experimentally demonstrated, vertical chip‐to‐chip evanescent coupler between silicon nitride (SiNx ) and silicon (Si) is presented with the coupler loss measured to be 0.39 ± 1.06 dB at 1550 nm with a 1‐dB bandwidth of 160 nm extending across the C‐band, S‐band, and L‐band (1480–1640 nm). The average coupling loss is determined to be 0.73 dB for the 1480–1640 nm wavelength range with a ± 2σ tolerance of ± 0.92 dB. The 1‐dB lateral alignment tolerance is 1.56 ± 0.14 μm at 1550 nm and the average tolerance is 1.38 ± 0.24 μm across the 1480–1640 nm wavelength regime. In addition, the average coupling loss varies by less than ± 0.35 dB and the average 1‐dB alignment tolerance varies by less than ± 30 nm for temperatures varying from 23 to 60 °C. Finally, the average coupling loss range is less than 1.5 dB range across four sets of identically packaged die. This is the first experimental demonstration of an interchip, passively assembled evanescent coupler using standard complementary metal‐oxide‐semiconductor foundry processes for directly coupling between Si and SiNx , overcoming a waveguide refractive index difference of Δn = 1.32 without requiring taper tip widths of less than 100 nm.

materials science, multidisciplinary