Structure and Stoichiometry Evolution of Sputtered Nb Doped Tio2 Films Induced by O-2 Pressure Variation During Postannealing Process

Letao Zhang,Xiang Xiao,Xiaoliang Zhou,Hongyu He,Xin Xu,Qingping Lin,Hang Zhou,Shengdong Zhang,Hongyuan Zhang,Qiong Liu

DOI: https://doi.org/10.1116/1.4961538

2016-01-01

Abstract:Nb doped TiO2 (TiO2:Nb) thin films are prepared by direct current magnetron sputtering on glass substrates followed by different O2 pressure postanneal at 300 °C. The proper postannealing O2 pressure (PO2−anneal) prompts the crystallization of the as-deposited amorphous TiO2:Nb films and improves the electron mobility. High vacuum postanneal leads to weak crystalline TiO2:Nb films, while the TiO2:Nb films remain amorphous at high PO2−anneal. The average transmittance in the visible region increases monotonically with PO2−anneal due to the reduction of oxygen vacancy and reaches 81% when PO2−anneal is 20 Pa. However, an oxygen interstitial can be formed in O2 rich annealing atmosphere, which would result in the suppression of carrier concentration. The carrier concentration maximum (∼1.55 × 1021 cm−3) of the TiO2:Nb films is obtained when the PO2−anneal is 0.5 Pa.