Abstract:Pulsed DC magnetron sputtering was used to deposit indium‑tin-oxide (ITO) thin films on glass substrates for application in photovoltaic devices as the final window layer. The evolution of crystal phase, morphology, resistivity and transmittance of the ITO films under different thermal annealing procedure (in-situ annealing versus post-annealing) at relatively low temperatures (up to 300°C) were studied. Fully crystalline ITO films with low sheet resistance of 24Ω/□ and high average transmittance (exclude glass substrate) of 90.10% with a Haacke's figure of merit 1.47×10−2Ω−1 were obtained by in-situ annealing at 200°C. In comparison, the minimum temperature observed to fully crystalize the ITO thin films with competitive crystallinity, electrical and optical properties by post-annealing was 250°C. The corresponding post-annealed 300nm thick films showed sheet resistance of 49Ω/□ and average transmittance (exclude glass substrate) as high as 91.93% with a Haacke's figure of merit 0.882×10−2Ω−1. The surface morphology of the as-deposited ITO films remained homogeneous after post-annealing whereas large particles (up to 100nm) were observed on the surface of the films deposited by in-situ annealing. The results indicated that different thermal treatment procedures at lower temperatures produce significant effect on the electrical, optical and other physical properties of the ITO thin films which are critical for the window layer in photovoltaics.

Effect of annealing temperature on the microstructure and optoelectronic properties of niobium-doped anatase TiO2 thin films grown on soda-lime glass substrate

Structural and Optoelectrical Properties of Nb-TiO2 Films Fabricated by Low-Energy Magnetron Sputtering and Post-Annealing

Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering

Effect of Nb Doping Concentration on Transparent Conductivity of TiO2 Films Fabricated by Sol-Gel Method

Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Structural, Optical and Electrical Properties of Sputtered Nb Doped TiO2 Transparent Conductive Films

Fabrications of Nb-doped TiO 2 (TNO) Transparent Conductive Oxide Polycrystalline Films on Glass Substrates by Sol–gel Method

Doping Concentration Effects Upon Column-Structured Nb:TiO2 for Transparent Conductive Thin Films Prepared by a Sol–gel Method

Fabrication of electrochromic TiO2:Nb films by ultrasonic spray pyrolysis

Effects of Annealing on the Temperature Coefficient of Resistance of Nickel Film Deposited on Polyimide Substrate

The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

Effect of annealing temperature on the optoelectronic properties and structure of NiO films

Effects of Substrate Temperature on the Properties of Nb-Doped ITO Thin Films

Effect of Annealing Conditions on the Structural, Electrical and Optical Properties of Li-doped NiO Thin Films

Effect of Different Thermo-Treatment at Relatively Low Temperatures on the Properties of Indium‑tin-Oxide Thin Films

Influence of Annealing Process on Conductive Properties of Nb-Doped Tio2 Polycrystalline Films Prepared by Sol-Gel Method

Preparation and Characteristics of Nb-doped Indium Tin Oxide Thin Films by RF Magnetron Sputtering

Interplay between the heat treatment and structural and optical properties of Nb2O5 thin films

Controllable Formation of (004)-Orientated Nb:TiO2 for High-Performance Transparent Conductive Oxide Thin Films with Tunable Near-Infrared Transmittance.

The Sintering Trajectory and Electrical Properties of Niobium‐Doped Titania Sputtering Targets

Structure and Stoichiometry Evolution of Sputtered Nb Doped Tio2 Films Induced by O-2 Pressure Variation During Postannealing Process