Quantized Conductance Coincides with State Instability and Excess Noise in Tantalum Oxide Memristors

Wei Yi,Sergey E. Savel'ev,Gilberto Medeiros-Ribeiro,Feng Miao,M.-X. Zhang,J. Joshua Yang,Alexander M. Bratkovsky,R. Stanley Williams

DOI: https://doi.org/10.1038/ncomms11142

IF: 16.6

2016-01-01

Nature Communications

Abstract:Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable conductance fluctuations and enlarged electronic noise. Here, we observe diverse conductance-dependent noise spectra, including a transition from 1/f(2) (activated transport) to 1/f (flicker noise) as a function of the frequency f, and a large peak in the noise amplitude at the conductance quantum GQ=2e(2)/h, in contrast to suppressed noise at the conductance quantum observed in other systems. We model the stochastic behaviour near the point contact regime using Molecular Dynamics-Langevin simulations and understand the observed frequency-dependent noise behaviour in terms of thermally activated atomic-scale fluctuations that make and break a quantum conductance channel. These results provide insights into switching mechanisms and guidance to device operating ranges for different applications.