Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Spectromicroscopy of Tantalum Oxide Memristors

State Dynamics and Modeling of Tantalum Oxide Memristors

Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Nanosecond Memristor Based on Oxygen Vacancy Engineering in SrTiO3 Single Crystal

Crystal Structure, Stability, and Metal-Insulator-Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Picosecond Time-Scale Resistive Switching Monitored in Real-Time

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Real-time in situ optical tracking of oxygen vacancy migration in memristors

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Evolution between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiO x /CeO y /F-Doped SnO 2 Nanostructure-Based Memristor Devices for Information Processing Applications

Evolution Between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiO X /ceo Y /F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications

High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy.

Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces