Evolution Between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiO X /ceo Y /F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications

Chuan Yang,Bai Sun,Guangdong Zhou,Hongbin Zhao,Shouhui Zhu,Chuan Ke,Yong Zhao,Hongyan Wang
DOI: https://doi.org/10.1021/acsanm.3c01282
IF: 6.14
2023-01-01
ACS Applied Nano Materials
Abstract:Itis well known that higher requirements have been put forwardfor the computing efficiency and storage speed of the data processingof memory devices in the post Moore era. In particular, if a memorydevice with multiple physical characteristics can be developed, itwill play an important role in realizing multifunctional applicationsof electronic systems. Here, a nanoscale memristor device with a Ag/TiO x /CeO y /F-dopedSnO(2) structure was prepared, which shows many interestingphysical phenomena with the changing of the applied voltage. In thelow-voltage region (<1.5 V), the device presents a volatile property,while it presents a nonvolatile behavior when a higher voltage (>2V) was applied. Interestingly, the non-zero-crossing current-voltage(I-V) hysteresis behaviorcaused by the internal electromotive force appears in the voltageregion of 0.5-1 V. Furthermore, as the applied voltage increases,the device gradually displays ideal memristor behavior and exhibitsthe standard resistance switching characteristic accompanied by thenegative differential resistance effect in the region of 3.5-4.0V. Therefore, this nanoscale device with multiple physical propertiesopens up a promising way for understanding the emerging physical phenomena,and it will be expected to become a potential candidate for the nextgeneration of multifunctional electronic devices.
What problem does this paper attempt to address?