Abstract:Layout-dependent effects (LDEs) are becoming increasingly important as technology node continues to shrink into the regime of FinFET transistors. Prior LDE studies mainly focus on accurate transistor modeling and fast circuit performance evaluations at the early lifetime of a design. Few studies have been performed on the layout dependency of the circuit aging towards the end of life (EOL). This study demonstrates that, due to transistor-level layout-dependent aging (LDA) behaviors, circuit-level timing degradations are greatly impacted by layout configurations, including length of diffusion and oxide spacing. In this paper, we propose the first circuit-level aging mitigation framework to improve the critical-path timing towards the EOL. Our framework features comprehensive LDA evaluations for standard cell timing, which shows that multiple-row height cells lead to worse EOL timing than single-row height cells due to length-of-diffusion effects. We further propose a min-cost-flow-based placement approach to concurrently allocate the oxide spacing among neighboring standard cells, which generates much better EOL timing than a conventional greedy approach. Experimental results demonstrate that under the concurrent approach in the proposed aging mitigation framework, the total and worst negative slacks for EOL timing are on average reduced by 42% and 25%, respectively.

Layout Dependent BTI and HCI Degradation in Nano CMOS Technology: A New Time-Dependent LDE and Impacts on Circuit at End of Life

Adding the Missing Time-Dependent Layout Dependency into Device-Circuit-layout Co-Optimization - New Findings on the Layout Dependent Aging Effects

Layout-dependent aging mitigation for critical path timing.

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint

Concurrent device/circuit aging for general reliability simulations

Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization

A Framework for Estimating NBTI Degradation of Microarchitectural Components

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology: — New-generation Aging Model and Circuit Reliability Simulator

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Duty cycle shift under static/dynamic aging in 28nm HK-MG technology

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Accelerated Aging in Analog and Digital Circuits with Feedback

Optimal Vdd Assessment Of Cmos Technology Considering Circuit Reliability Tradeoffs

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-Nm Nmosfets: Concerns on the Layout-Dependent Effects

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Optimal V<inf>DD</inf> Assessment of CMOS Technology Considering Circuit Reliability Tradeoffs