Abstract:3-D cross point phase change memory (PCM) is a promising emerging memory. However, dynamic performances of 3-D cross point PCM are limited and the role of bias scheme is unknown. Previous studies on bias schemes for planar memories use static analyses to assess static array performances. Here, a high peak transient read current is found to result in a long read access time. Three factors which contribute to the high peak read current are analyzed. The proposed 2V/3 bias scheme and a single-reference parasitic-matching sensing circuit are utilized in a 64Mbit 3-D cross point PCM. The sensing time is reduced by 22.5%. Designing bias schemes through dynamic analyses paves the way for the development of high-performance 3-D PCM technology to boost the working efficiency of computing systems. The following contents are the listed errors as mentioned in the comments for reasons of withdrawal: missing labels of Fig.1, lack of the explanation of the peak current on the sensing speed, lack of the reason of the chosen of 2V/3 scheme, lack of influence of the parasitic capacitors, unclear explanation of the factor that contributes to a high peak read current, lack of comparisons, lack of the explanation of the sneak current, lack of the explanations of the SRPM sensing circuit, lack of the define valuables like NM_{A1}, unclear explanation of comparisons of the power consumption, wrong writing of the two conventional circuits, writing of 3D-IC, wrong writing of number of memory layers, etc. These errors may confuse a good understanding of our work. Therefore, we decide to withdraw this manuscript from arXiv. We will significantly rewrite it and publish the correct and complete paper in the future.

Methods to Speed Up Read Operation in a 64 Mbit Phase Change Memory Chip.

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Enhanced Read Performance For Phase Change Memory Using A Reference Column

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier

Design of a High-Speed and Automatically Swiched Precharge Sense Amplifier

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Optimizing the Design of Read Circuit of Resistive Random Access Memory

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

An eDRAM with Logic Technology Using High-Speed R/W and Compact Charge Transfer Refresh Scheme

Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

Bias Scheme Reducing Transient Currents and Speeding up Read Operations for 3-D Cross Point PCM

A logic 2T gain cell eDRAM with enhanced retention and fast write scheme

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

A low-Power SRAM with charge cycling based read and write assist scheme

A control scheme for a 65nm 32×32b 4-read 2-write register file

Gain Cell eDRAM Design with Stagger Hidden Refresh Scheme

Josephson-CMOS Hybrid Memory with Ultra-High-speed Interface Circuit