Abstract:Heterojunctions of dissimilar materials are increasingly being used in optoelectronics for their superior properties. However, the heart of the heterojunctionits interfaceand its impact on the device performance are seldom studied in detail. Herein, we report on the band alignment modification of heterojunction formed between amorphous Ga2O3 and CdS, two intrinsically n-type materials, with high optical absorbance but different band gaps. The resultant heterostructure-based devices remain solar-blind and outperform the singular bare photodetectors. To further improve upon device performance, the heterostructure is subjected to a moderate annealing of 300 °C. The annealed heterojunction device shows a reduction in dark current by more than 1 order of magnitude along with an enhanced photocurrent. The response time of the devices reduces from 1.35 s/2.87 s (rise/fall time) to about 0.38 s/0.75 s upon annealing. To study this change in the device performance between the pristine and the annealed interface, the two heterojunctions are compared using X-ray photoelectron spectroscopy depth profiling, and results show that the pristine heterostructure has a sharp interface whereas upon annealing, it leads to a sort of diffuse interface. This produces a reduced valence band offset, resulting in a change in the band alignment from type II to type I. The carrier dynamics across the two interfaces therefore changes and is further validated using Kelvin probe force microscopy. This study reveals how the change at the interface by mere annealing can lead to a huge alteration in the band alignment and thus, the carrier dynamics, thereby completely altering the ultimate device performance.

Effect of Post-Growth Annealing Treatment on Interfacial Misfit GaSb/GaAs Heterostructures

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Evolution of Interfacial Properties with Annealing in InAs/GaSb Superlattice Probed by Infrared Photoluminescence

Effect of an In-Situ Thermal Annealing on the Structural Properties of Self-Assembled Gasb/Gaas Quantum Dots

Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures grown by MOCVD

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Deep-Level Transient Spectroscopy of Interfacial States in "Buffer-Free" P-I-N Gasb/Gaas Devices

Effects of in-situ thermal annealing on metamorphic InGaAs photodetector materials grown by molecular beam epitaxy

The Effect Of Thermal-Treatment On The Electrical-Properties Of Mbe-Alinas

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact

Interfacial-Mixing and Band Engineering Induced by Annealing of CdS and a-Ga 2 O 3 n–n-Type Thin-Film Heterojunction and Its Impact on Carrier Dynamics for High-Performance Solar-Blind Photodetection

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells

Effect of In-Situ Annealing on the Structural and Optical Properties of GeSn Films Grown by MBE

Effect of High Temperature, High Pressure Annealing on GaN Drift Layers for Vertical Power Devices

The Effect of Growth Temperature on the Electrical-Properties of Alinas/Inp Grown by Molecular-Beam Epitaxy and Metal-Organic Chemical-Vapor-Deposition