Abstract:Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this paper, we present a systematic experimental and theoretical study on the thermal conductivity of GeTe at high temperatures involving fast change from amorphous to crystalline phase upon heating. Modulated photothermal radiometry (MPTR) is used to experimentally determine thermal conductivity of GeTe at high temperatures in both amorphous and crystalline phases. Thermal boundary resistances are accurately taken into account for experimental consideration. To develop a concrete understanding of the underlying physical mechanism, rigorous and in-depth theoretical exercises are carried out. For this, first-principles density functional methods and linearized Boltzmann transport equations (LBTE) are employed using both direct and relaxation time based approach (RTA) and compared with that of the phenomenological Slack model. The amorphous phase experimental data has been described using the minimal thermal conductivity model with sufficient precision. The theoretical estimation involving direct solution and RTA method are found to retrieve well the trend of the experimental thermal conductivity for crystalline GeTe at high temperatures despite being slightly overestimated and underestimated, respectively, compared to the experimental data. A rough estimate of vacancy contribution has been found to modify the direct solution in such a way that it agrees excellently with the experiment. Umklapp scattering has been determined as the significant phonon-phonon scattering process. Umklapp scattering parameter has been identified for GeTe for the whole temperature range which can uniquely determine and compare Umklapp scattering processes for different materials

Raman Study on the Crystallization Characteristics of Amorphous Ge2sb2te5 Film

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Structural and electronic characteristics of amorphous Ge8Sb2Te11

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

An Explanation of the Crystallization of Amorphous Ge2sb2te5 Films Induced by A Short Gaussian Laser Pulse

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Structure and Crystallization Kinetics of as‐deposited Films of the GeTe Phase Change Compound from Atomistic Simulations

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Preparation and Characterization of Gete4 Thin Films As A Candidate for Phase Change Memory Applications

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Thermally-induced nanoscale phase change in chalcogenide glass Cr2Ge2Te6 revealed by scanning tunneling microscopy

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study