Abstract:Diamond has been considered as an ultimate semiconductor, which has great potential applications in high power, high frequency semiconductor devices. Up to now, the twodimensional hole gas (2DHG) induced on the hydrogenterminated diamond surface is used most popularly to form electric conduction in diamond semiconductor at room temperature, due to the obstacle caused by lacking of easily-ionized dopants. A 200-nm-thick single crystalline diamond is grown by microwave plasma chemical vapor deposition on the type-Ib high-pressure high-temperature synthesized diamond substrate. Then the sample is treated in hydrogen plasma atmosphere to achieve hydrogen terminated diamond surface. The sample is characterized by X-ray photoelectron spectroscopy and atomic force microscope. After that, the normally-on hydrogen-terminated diamond field effect transistors are achieved. The device with a gate length of 2 μup m delivers a saturation leakage current of 96 mA/mm at gate voltage VGS=-6 V, at which, however, the gate leakage current is too large. The saturation current reaches 77 mA/mm at VGS=-3.5 V with safety. The device shows typical long-channel behavior. The gate voltage varies almost linearly. In the saturation region of the device, the transconductance (gm) increases near-linearly to 30 mS/mm with the increase of the gate voltage in a range of 5.9 V. Analyses of the on-resistance and capacitance-voltage (C-V) data show that the 2DHG under the gate achieves a density as high as 1.99×1013 cm-2, and the extracted channel carrier density and mobility are always kept increasing with VGS negatively shifting to -2.5 V. The nearlinearly increasing of gm in a large VGS range is attributed to high 2DHG density, quite a large gate capacitance (good gate control), and increased mobility. The relevant researches of improving the carrier mobility in the channel and of finding proper gate dielectrics to improve the forward gate breakdown voltage are underway.

Diamond Based Field-Effect Transistors of Zr Gate Withsinxdielectric Layers

Diamond Based Field-Effect Transistors with Sinx and Zro2 Double Dielectric Layers

Performance of Hydrogenated Diamond MISFET Using Zr-Si-N As the Dielectric Layer

High-threshold-voltage and Low-Leakage-current of Normally-off H-diamond FET with Self-Aligned Zr/ZrO2 Gate

Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation

Improved Performance of H-Diamond Mosfets with Zro2/Al2o3 Gate Dielectric Stacks Deposited by Electron Beam Method

Small Subthreshold Swing Diamond Field Effect Transistors with SnO2 Gate Dielectric

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor with Ferroelectric HfZrOx/Al2O3Gate Dielectrics

Characteristics of H-terminated Single Crystalline Diamond Field Effect Transistors

Oxidized-silicon-terminated Diamond p-FETs with SiO 2 -fiNing Shallow Trench Isolation Structures

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Diamond MOSFET with MoO<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> doubly stacked gate dielectric

C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation