Abstract:We have studied the color-center production in sapphire and yttria-stabilized zirconia (YSZ) single crystals by cathodo-luminescence (CL) spectroscopy for electron energies ranging between 400 and 1250 keV in a high-voltage electron microscope. Emission spectra were collected for in-beam conditions near room temperature and at 200 K. Comparison was made with CL spectra recorded for 3-keV–20-keV electrons in a scanning electron microscope. For high-energy electrons, CL spectra for sapphire revealed broad emission bands centered at photon energies about 3.0 eV and 3.8 eV that were, respectively, assigned to oxygen vacancies (F0 and F+ centers) induced by elastic collisions, on the basis of photoluminescence (PL) data. No such bands were recorded for 3-keV and 5-keV electrons. Two similar bands were also recorded for YSZ (with 9.5 and 18 mol. % yttria) at about 2.8 eV and 4.1 eV that can be, respectively, attributed to the native oxygen vacancies (F2+ centers) and F+ centers. The 4.1-eV band was not seen for 20-keV electrons: it was only produced for high electron energies by elastic collision processes. Instead, the small side band was also found at 2.85 eV for 20-keV electrons. PL excitation contour plots of virgin and irradiated YSZ were also recorded to support our discussion on point-defect identification. CL band intensities show a maximum versus electron energy, whereas point-defect concentrations should increase due to the increase of oxygen atom displacement cross section. The effect of electron energy on the different steps of the CL process is discussed to account for such a behavior.

Electron paramagnetic resonance in gamma-ray, electron and neutron flux irradiated sapphire

Radiation resistance of synthetic sapphire crystal irradiated by low-energy neutron flux

Neutron irradiation and post annealing effect on sapphire by positron annihilation.

Irradiation Effect on Sapphire for Optical Window

Mechanical characteristics of sapphire before and after neutron irradiation

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

Effect of Irradiation on Ti-Doped Sapphire by Excimer Laser

Photoluminescence Character of Xe Ion Irradiated Sapphire

Thermoluminescence and Optical Stimulated Luminescence Studies of Sapphire

EFFECT OF IRRADIATION ON Ti-DOPED SAPPHIRE BY TWO DIFFERENT KINDS OF LASER

Cathodo-luminescence of color centers induced in sapphire and yttria-stabilized zirconia by high-energy electrons

Photo-EPR Study of Gamma and Neutron Irradiated SI GaAs:Cr

Phonon Dynamics in Γ-Ray Irradiated Sapphire Crystals Studied by Fs-Cars Technique

Femtosecond laser irradiation on YAG and sapphire crystals

EPR study of gamma-ray irradiated semi-insulated GaAs:Cr

Effects of ion irradiation and annealing on optical and structural properties of CeO2 films on sapphire

Effect of Uniform Helium Doping on the Optical Properties and Laser Damage Performance of Sapphire

Effect of Irradiation on Sapphire Crystals by Femtosecond Pulse Laser

Effects of Annealing on the Photoluminescence of He Ion Implanted Sapphire after 230-Mev Pb Ion Irradiation

Enhancement of Paramagnetic Defects in Yttria Stabilized Zirconia Implanted by Cs Ion Irradiation

Influence of gamma-irradiation sterilization on the structural defects of sapphire single crystals (alpha-Al(2)O(3))