Abstract:It is essential to develop pattern-related process windows on substrate surface for reducing the dislocation density of wide bandgap semiconductor film growth. For extremely high instantaneous intensity and excellent photon absorption rate, femtosecond lasers are currently being increasingly adopted. However, the mechanism of the femtosecond laser developing pattern-related process windows on the substrate remains to be further revealed. In this paper, a model is established based on the Fokker–Planck equation and the two-temperature model (TTM) equation to simulate the ablation of a sapphire substrate under the action of a femtosecond laser. The transient nonlinear evolutions such as free electron density, absorption coefficient, and electron–lattice temperature are obtained. This paper focuses on simulating the multiphoton absorption of sapphire under femtosecond lasers of different wavelengths. The results show that within the range of 400 to 1030 nm, when the wavelength is large, the number of multiphoton required for ionization is larger, and wider and shallower ablation pits can be obtained. When the wavelength is smaller, the number of multiphoton is smaller, narrower and deeper ablation pits can be obtained. Under the simulation conditions presented in this paper, the minimum ablation pit depth can reach 0.11 μm and the minimum radius can reach 0.6 μm. In the range of 400 to 1030 nm, selecting a laser with a shorter wavelength can achieve pattern-related process windows with a smaller diameter, which is beneficial to increase the density of pattern-related process windows on the substrate surface. The simulation is consistent with existing theories and experimental results, and further reveals the transient nonlinear mechanism of the femtosecond laser developing the pattern-related process windows on the sapphire substrate.

Effect of Irradiation on Sapphire Crystals by Femtosecond Pulse Laser

Femtosecond laser irradiation on YAG and sapphire crystals

Effect of Irradiation on Ti-Doped Sapphire by Excimer Laser

EFFECT OF IRRADIATION ON Ti-DOPED SAPPHIRE BY TWO DIFFERENT KINDS OF LASER

Irradiation Effect on Sapphire for Optical Window

Effect of Irradiation on YAG Crystals by Femtosecond Pulse Laser

An investigation of long pulsed laser induced damage in sapphire

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Effect of Uniform Helium Doping on the Optical Properties and Laser Damage Performance of Sapphire

Damage/ablation Morphology of Laser Conditioned Sapphire under 1064 Nm Laser Irradiation

Temporal-spatial Dynamics of Electronic Plasma in a Femtosecond Laser-Induced Sapphire Microstructure.

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Femtosecond laser-induced darkening in optical glasses

Femtosecond laser ablation of crystals SiO2 and YAG

Multiphoton Absorption Simulation of Sapphire Substrate under the Action of Femtosecond Laser for Larger Density of Pattern-Related Process Windows

Simulation of Femtosecond Laser Ablation Sapphire Based on Free Electron Density

Irradiation Effect of Space Particle on Sapphire Single Crystal for Optical Window Material

Optical Properties and Laser Damage Performance of Sio2 Irradiated by High-Power Pulsed Electron Beam

Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

The Structural Damage and Defects Induced by Femtosecond Laser Pulse in Znse Single Crystals

Microexplosions in bulk sapphire driven by simultaneously spatially and temporally focused femtosecond laser beams.