Enhancement of Paramagnetic Defects in Yttria Stabilized Zirconia Implanted by Cs Ion Irradiation

X. T. Zu,S. Zhu,L. M. Wang,R. C. Ewing
DOI: https://doi.org/10.1016/j.jallcom.2006.03.089
IF: 6.2
2007-01-01
Journal of Alloys and Compounds
Abstract:Single crystal samples of cubic zirconia stabilized by 9.5mol% Y2O3 (YSZ) were implanted with 200KeV Xe ions and 400KeV Cs ions up to a dose of 5×1016ions/cm2, then annealed at 200, 300, and 400°C for 1h isochronously, respectively. Electron paramagnetic resonance (EPR) and cross-sectional transmission electron microscopy were used to study defect structure and radiated damage mechanism. EPR spectra showed the trigonal signal with g∥=1.989 and g⊥=1.869, which exhibited axial symmetry with 〈111〉 direction as symmetry axis composed of six-fold-coordinated Zr3+ sites. Peak-to-peak intensity (per unit volume) of Cs-ion irradiated YSZ is as about 150 time as that of Xe-ion irradiated YSZ. This indicated that the concentration of six-fold-coordinated Zr3+ defects produced by Cs-ion irradiation was far more than that of Xe-ion irradiated. The cross-sectional image of the irradiated samples showed that the Cs-ion irradiation in YSZ produced more defect clusters than Xe-ion irradiation. Annealing did not produce any change for EPR signals and indicated six-fold-coordinated Zr3+ defects was stable defect structure below 400°C.
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