Electron microscopy and optical spectroscopy study of xenon-implanted yttria-stabilized zirconia

S. Zhu,X.T. Zu,X. Xiang,Z.G. Wang,L.M. Wang,R.C. Ewing
DOI: https://doi.org/10.1016/S0168-583X(03)00917-0
2003-01-01
Abstract:Transmission electron microscopy (TEM), optical absorption and photo-luminescence spectroscopy were utilized to characterize the damage structure in 200 keV Xe+-implanted yttria-stabilized zirconia (YSZ). The implantation was conducted at room temperature up to a fluence of 1 x 10(17) Xe+/cm(2). TEM analysis showed that the density of defect clusters increased with increasing ion fluence. Small bubbles (3-5 nm in diameter) precipitated in the sample at a fluence of 1 x 10(17) Xe+/cm(2). No amorphization was observed. A broad absorption band centered at 522 or 497 nm was observed in the optical absorption spectra of samples implanted with 1 x 10(16) Xe+/cm(2) and 1 X 10(17) Xe+/cm(2), respectively. The band may be associated with the combination of electrons trapped at oxygen vacancies and oxygen ions with trapped holes. Luminescence measurements of the YSZ crystal implanted with 1 x 10(16) Xe+/cm(2) show that Xe+-implantation did not produce other optically active defects. (C) 2003 Elsevier Science B.V. All rights reserved.
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